2SC607晶体管资料

  • 2SC607别名:2SC607三极管、2SC607晶体管、2SC607晶体三极管

  • 2SC607生产厂家:日本日立公司

  • 2SC607制作材料:Si-NPN

  • 2SC607性质:射频/高频放大 (HF)_TR_输出极 (E)

  • 2SC607封装形式:直插封装

  • 2SC607极限工作电压:75V

  • 2SC607最大电流允许值:0.6A

  • 2SC607最大工作频率:70MHZ

  • 2SC607引脚数:3

  • 2SC607最大耗散功率:1W

  • 2SC607放大倍数

  • 2SC607图片代号:C-40

  • 2SC607vtest:75

  • 2SC607htest:70000000

  • 2SC607atest:.6

  • 2SC607wtest:1

  • 2SC607代换 2SC607用什么型号代替:BC140,BC141,BC300,BC301,BC302,BFX96A,BFX97A,BSW53,BSW54,2SC959,3DA103B,

2SC607价格

参考价格:¥1.7479

型号:2SC6076(TE16L1,NV) 品牌:Toshiba Semiconductor an 备注:这里有2SC607多少钱,2024年最近7天走势,今日出价,今日竞价,2SC607批发/采购报价,2SC607行情走势销售排行榜,2SC607报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SC607

PNP/NPNSILICONEPITAXIALTRANSISTOR

AudioFrequencyAmplifier

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

NPNEpitaxialPlanarSiliconTransistorHigh-CurrentSwitchingApplications

High-CurrentSwitchingApplications Applications •Relaydrivers,lampdrivers,motordrivers. Features •AdoptionofMBITprocess. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching.

SANYOSanyo

三洋三洋电机株式会社

SANYO

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconNPNEpitaxialType

PowerAmplifierApplications PowerSwitchingApplications Lowcollectoremittersaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) High-speedswitching:tstg=0.4μs(typ)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconNPNEpitaxialType(PCTProcess)

PowerAmplifierApplications PowerSwitchingApplications Lowcollectorsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) High-speedswitching:tstg=0.4μs(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconNPNEpitaxialType(PCTProcess)

○PowerAmplifierApplications ○PowerSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •High-speedswitching:tstg=0.4μs(typ)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconNPNEpitaxialType(PCTProcess)

○PowerAmplifierApplications ○PowerSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •High-speedswitching:tstg=0.4μs(typ)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconNPNEpitaxialType

PowerAmplifierApplications PowerSwitchingApplications Lowcollectorsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) High-speedswitching:tstg=0.4μs(typ)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 80V 3A PW-MOLD 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

2SC607产品属性

  • 类型

    描述

  • 型号

    2SC607

  • 功能描述

    PNP/NPN SILICON EPITAXIAL TRANSISTOR

更新时间:2024-4-16 18:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
23+
TO-252
3639
原厂原装正品
三年内
1983
纳立只做原装正品13590203865
TOSHIBA/东芝
23+
NA/
5250
原装现货,当天可交货,原型号开票
TOSHIBA
14+
SOP
30
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TOSHIBA
1822+
TO-252
6852
只做原装正品假一赔十为客户做到零风险!!
TOSHIBA/Toshiba Semiconductor/
21+
TO-252
2469
优势代理渠道,原装正品,可全系列订货开增值税票
TOSHIBA
21+
TO-252
65200
一级代理/放心采购
TOS
22+23+
TO-220
8992
绝对原装正品全新进口深圳现货
TOSHIBA/东芝
2021+
12000
2020
TOSHIBA(东芝)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持

2SC607芯片相关品牌

  • AVAGO
  • DAESAN
  • HONEYWELL-ACC
  • HUBERSUHNER
  • IXYS
  • LITEON
  • Micron
  • MMD
  • NJSEMI
  • ROSENBERGER
  • Vicor
  • WALL

2SC607数据表相关新闻