2SC601晶体管资料

  • 2SC601别名:2SC601三极管、2SC601晶体管、2SC601晶体三极管

  • 2SC601生产厂家:日本富士通公司_日本松下公司

  • 2SC601制作材料:Si-NPN

  • 2SC601性质:高速开关 (SS)

  • 2SC601封装形式:直插封装

  • 2SC601极限工作电压:40V

  • 2SC601最大电流允许值:0.1A

  • 2SC601最大工作频率:580MHZ

  • 2SC601引脚数:3

  • 2SC601最大耗散功率:0.3W

  • 2SC601放大倍数

  • 2SC601图片代号:D-8

  • 2SC601vtest:40

  • 2SC601htest:580000000

  • 2SC601atest:.1

  • 2SC601wtest:.3

  • 2SC601代换 2SC601用什么型号代替:BSS10,BSS11,BSS12,BSV59,BSV91,BSV92,BSX19,BSX20,BSX39,BSX87,BSX88,BSX92,BSX93,BSY63,2N2368,2N2368A,2N2369,2N2369A,3DG122C,

2SC601价格

参考价格:¥14.9765

型号:2SC6011 品牌:Sanken 备注:这里有2SC601多少钱,2024年最近7天走势,今日出价,今日竞价,2SC601批发/采购报价,2SC601行情走势销售排行榜,2SC601报价。
型号 功能描述 生产厂家&企业 LOGO 操作

SiliconNPNTripleDiffusedType

HighVoltageSwitchingApplications SwitchingRegulatorApplications DC-DCConverterApplications •Highspeedswitching:tf=0.24μs(max)(IC=0.3A)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

AudioAmplificationTransistor

Description ByadaptingtheSankenuniquewafer-thinnertechnique,theseNPNpowertransistorsachievepower-upbydecreasingthermalresistance,andprovidehighervoltageavalanchebreakdownrating.Thehighpower-handlingcapacityoftheTO-3Ppackageallowsasmallerfootprintonthecircuit

Allegro

Allegro MicroSystems

Allegro

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-: V(BR)CEO=200V(Min)-2SC6011 ​​​​​​​=200V(Min)-2SC6011A •GoodLinearityofhFE •ComplementtoType2SA2151/A •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableope

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistor

DESCRIPTION •HighCollector-EmitterBreakdownVoltage- :V(BR)CEO=200V(Min) •GoodLinearityof(IFE •ComplementtoType2SA2151 APPLICATIONS •Designedforaudioandgeneralpurposeapplications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

AudioAmplificationTransistor

Description ByadaptingtheSankenuniquewafer-thinnertechnique,theseNPNpowertransistorsachievepower-upbydecreasingthermalresistance,andprovidehighervoltageavalanchebreakdownrating.Thehighpower-handlingcapacityoftheTO-3Ppackageallowsasmallerfootprintonthecircuit

SankenSanken Electric Co Ltd.

三垦日本三垦

Sanken

AudioAmplificationTransistor

Description ByadaptingtheSankenuniquewafer-thinnertechnique,theseNPNpowertransistorsachievepower-upbydecreasingthermalresistance,andprovidehighervoltageavalanchebreakdownrating.Thehighpower-handlingcapacityoftheTO-3Ppackageallowsasmallerfootprintonthecircuit

SankenSanken Electric Co Ltd.

三垦日本三垦

Sanken

AudioAmplificationTransistor

Description ByadaptingtheSankenuniquewafer-thinnertechnique,theseNPNpowertransistorsachievepower-upbydecreasingthermalresistance,andprovidehighervoltageavalanchebreakdownrating.Thehighpower-handlingcapacityoftheTO-3Ppackageallowsasmallerfootprintonthecircuit

Allegro

Allegro MicroSystems

Allegro

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-: V(BR)CEO=200V(Min)-2SC6011 ​​​​​​​=200V(Min)-2SC6011A •GoodLinearityofhFE •ComplementtoType2SA2151/A •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableope

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNtriplediffusionmesatype

SiliconNPNtriplediffusionmesatype Forhorizontaldeflectionoutput ■Features •Highbreakdownvoltage,andhighreliabilitythroughtheuseofaglasspassivationlayer •High-speedswitching •Widesafeoerationarea

PanasonicPanasonic Corporation

松下松下电器

Panasonic

NPNEpitaxialPlanarSiliconTransistorDC/DCConverterApplications

DC/DCConverterApplications Features •AdoptionofMBITprocess. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •NarrowhFErange. •Highallowablepowerdissipation. Applications •Relaydrivers,lampdrivers,motordrivers,flash.

SANYOSanyo

三洋三洋电机株式会社

SANYO

NPNEpitaxialPlanarSiliconTransistorDC/DCConverterApplications

DC/DCConverterApplications Features •AdoptionofMBITprocess. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •NarrowhFErange. •Highallowablepowerdissipation. Applications •Relaydrivers,lampdrivers,motordrivers,flash.

SANYOSanyo

三洋三洋电机株式会社

SANYO

NPNEpitaxialPlanarSiliconTransistorDC/DCConverterApplications

DC/DCConverterApplications Features •AdoptionofMBITprocess. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •NarrowhFErange. •Highallowablepowerdissipation. Applications •Relaydrivers,lampdrivers,motordrivers,flash.

SANYOSanyo

三洋三洋电机株式会社

SANYO

NPNEpitaxialPlanarSiliconTransistorDC/DCConverterApplications

DC/DCConverterApplications Features •AdoptionofMBITprocess. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •NarrowhFErange. •Highallowablepowerdissipation. Applications •Relaydrivers,lampdrivers,motordrivers,flash.

SANYOSanyo

三洋三洋电机株式会社

SANYO

PNP/NPNEpitaxialPlanarSiliconTransistorsHigh-CurrentSwitchingApplications

High-CurrentSwitchingApplications Features •AdoptionofMBITprocess. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. Applications •Relaydrivers,lampdrivers,motordrivers.

SANYOSanyo

三洋三洋电机株式会社

SANYO

BipolarTransistor(-)50V,(-)10A,LowVCE(sat),(PNP)NPNSingleTP/TP-FA

Features •AdoptionofMBITprocesses •Largecurrentcapacity •Lowcollector-to-emittersaturationvoltage •High-speedswitching Applications •Relaydrivers,lampdrivers,motordrivers

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

iscSiliconNPNPowerTransistor

DESCRIPTION •Largecurrentcapacitance •High-speedswitching •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •Complementaryto2SA2169 APPLICATIONS •relaydrivers,lampdrivers,motordrivers

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

BipolarTransistor(-)50V,(-)10A,LowVCE(sat),(PNP)NPNSingleTP/TP-FA

Features •AdoptionofMBITprocesses •Largecurrentcapacity •Lowcollector-to-emittersaturationvoltage •High-speedswitching Applications •Relaydrivers,lampdrivers,motordrivers

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BipolarTransistor(-)50V,(-)10A,LowVCE(sat),(PNP)NPNSingleTP/TP-FA

Features •AdoptionofMBITprocesses •Largecurrentcapacity •Lowcollector-to-emittersaturationvoltage •High-speedswitching Applications •Relaydrivers,lampdrivers,motordrivers

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNEpitaxialPlanarSiliconTransistorDC/DCConverterApplications

DC/DCConverterApplications Features •AdoptionofFBETandMBITprocesses. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •NarrowhFErange. •Highallowablepowerdissipation. Applications •Relaydrivers,lampdrivers,motor

SANYOSanyo

三洋三洋电机株式会社

SANYO

封装/外壳:TO-3P-3,SC-65-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 200V 15A TO3P 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

SankenSanken Electric Co Ltd.

三垦日本三垦

Sanken

封装/外壳:TO-3P-3,SC-65-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 230V 15A TO3P 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

SankenSanken Electric Co Ltd.

三垦日本三垦

Sanken

2SC601产品属性

  • 类型

    描述

  • 型号

    2SC601

  • 制造商

    TOSHIBA

  • 制造商全称

    Toshiba Semiconductor

  • 功能描述

    Silicon NPN Triple Diffused Type

更新时间:2024-3-28 22:47:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
三年内
1983
纳立只做原装正品13590203865
SANYO
2020+
SOT-89
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
SANYO/三洋
22+
SOT-89
100000
代理渠道/只做原装/可含税
SANYO
1822+
TO-252
9852
只做原装正品假一赔十为客户做到零风险!!
SANYO
21+
SOT-89
2000
原装现货假一赔十
SANYO
2017+
SOT-89
48520
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
SANYO/Sanyo/三洋/三洋电机株式
21+
SOT-89
2000
优势代理渠道,原装正品,可全系列订货开增值税票
SANYO
2023+
TO252
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
SANYO/三洋
SOT-89
265209
假一罚十原包原标签常备现货!
ON
23+
TO-251
33500
全新原装真实库存含13点增值税票!

2SC601芯片相关品牌

  • 3M
  • AVX
  • GSI
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  • MARL
  • MORNSUN
  • PAIRUI
  • PCA
  • PF
  • RENESAS
  • TTELEC
  • XFMRS

2SC601数据表相关新闻