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2SC59晶体管资料
2SC59别名:2SC59三极管、2SC59晶体管、2SC59晶体三极管
2SC59生产厂家:日本日电公司
2SC59制作材料:Si-NPN
2SC59性质:开关管 (S)_甚高频 (VHF)_视频输出 (Vid)
2SC59封装形式:直插封装
2SC59极限工作电压:120V
2SC59最大电流允许值:0.3A
2SC59最大工作频率:150MHZ
2SC59引脚数:3
2SC59最大耗散功率:0.8W
2SC59放大倍数:
2SC59图片代号:C-40
2SC59vtest:120
2SC59htest:150000000
- 2SC59atest:.3
2SC59wtest:.8
2SC59代换 2SC59用什么型号代替:BC300,BF257,BF336,BF657,BFT57,BFT47,2N1893(A),2N2102,2N2405,3DG182H,
2SC59价格
参考价格:¥0.6230
型号:2SC5916TLQ 品牌:Rohm 备注:这里有2SC59多少钱,2024年最近7天走势,今日出价,今日竞价,2SC59批发/采购报价,2SC59行情走势销售排行榜,2SC59报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
SILICONTRANSISTOR CRTDisplayHorizontalDeflectionOutputApplications Features •Highspeed. •Highbreakdownvoltage(VCBO=1700V). •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess. •Builtindamperdiode. | SANYOSanyo 三洋三洋电机株式会社 | |||
HighSwitchingSpeed DESCRIPTION •HighBreakdownVoltage-:VCBO=1700V(Min) •HighSwitchingSpeed •HighReliability APPLICATIONS •ColorTVhorizontaldeflectionoutputapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNtriplediffusionmesatype HorizontaldeflectionoutputforTV *Features •Highbreakdownvoltage:VCBO≥1700V •Widesafeoperationarea •Built-indumperdiode | PanasonicPanasonic Corporation 松下松下电器 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •HighBreakdownVoltage •Built-indamperdiodetype •HighSwitchingSpeed •WideAreaofSafeOperation •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designedforhighvoltagecolordisplayhori | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNtriplediffusionmesatype ForHorizontaldeflectionoutputforTV,CRTmonitor ■Features •Highbreakdownvoltage(VCBO≥1700V) •High-speedswitching(tf | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNtriplediffusionmesatype HorizontaldeflectionoutputforTV,CRTmonitor ■Features •Highbreakdownvoltage:VCBO≥1700V •High-speedswitching:tf | PanasonicPanasonic Corporation 松下松下电器 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SiliconNPNtriplediffusionmesatype Forhorizontaldeflectionoutput ■Features •Highbreakdownvoltage:VCBO≥1500V •High-speedswitching:tf | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNtriplediffusionmesatype SiliconNPNtriplediffusionmesatype HorizontaldeflectionoutputforTV ■Features •Highbreakdownvoltage:VCBO≥1500V •Widesafeoperationarea •Built-indumperdiode | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNtriplediffusionmesatype SiliconNPNtriplediffusionmesatype HorizontaldeflectionoutputforTV,CRTMonitor ■Features •Highbreakdownvoltage:VCBO≥1500V •Widesafeoperationarea •Built-indumperdiode | PanasonicPanasonic Corporation 松下松下电器 | |||
NPNEPITAXIALPLANARSILICONTRANSISTOR High-CurrentSwitchingApplications Features •AdoptionofMBITprocesses. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •Surfacemounttype. Applications •Relaydrivers,lampdrivers,motordrivers,inverters. | SANYOSanyo 三洋三洋电机株式会社 | |||
Mediumpowertransistor(30V,2A) Features 1)Highspeedswitching.(Tf:Typ.:20nsatIC=2A) 2)Lowsaturationvoltage,typically (Typ.:200mVatIC=1.0A,IB=0.1A) 3)Strongdischargepowerforinductiveloadand capacitanceload. 4)Complementsthe2SA2113 Applications Lowfrequencyamplifier | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
SiliconNPNtriplediffusionplanartype Forpoweramplification ■Features •HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity. •Lowcollector-emittersaturationvoltageVCE(sat) •Allowingsupplywiththeradialtaping | PanasonicPanasonic Corporation 松下松下电器 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SiliconNPNtriplediffusionmesatype HorizontaldeflectionoutputforTV,CRTmonitor ■Features •Highbreakdownvoltage:VCBO≥1700V •Highspeedswitching:tf200ns •Widesafeoperationarea | PanasonicPanasonic Corporation 松下松下电器 | |||
2SC5932 Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications Features •Highspeed. •Highbreakdownvoltage(VCBO=1600V). •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess. | SANYOSanyo 三洋三洋电机株式会社 | |||
2SC5933 Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications Features •Highspeed. •Highbreakdownvoltage(VCBO=1600V). •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess. | SANYOSanyo 三洋三洋电机株式会社 | |||
SiliconNPNtriplediffusionplanartype SiliconNPNtriplediffusionplanartype Forpoweramplification ForTVverticaldeflectionoutput ■Features •SatisfactorylinearityofforwardcurrenttransferratiohFE •Dielectricbreakdownvoltageofthepackage:5kV •Full-packpackagewhichcanbeinstalledtotheheatsinkwithon | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNtriplediffusionplanartype SiliconNPNtriplediffusionplanartype Forpoweramplification ForTVverticaldeflectionoutput ■Features •SatisfactorylinearityofforwardcurrenttransferratiohFE •Dielectricbreakdownvoltageofthepackage:5kV •Full-packpackagewhichcanbeinstalledtotheheatsinkwithon | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNtriplediffusionplanartype SiliconNPNtriplediffusionplanartype Forpoweramplification ForTVverticaldeflectionoutput ■Features •SatisfactorylinearityofforwardcurrenttransferratiohFE •Dielectricbreakdownvoltageofthepackage:5kV •Full-packpackagewhichcanbeinstalledtotheheatsinkwithon | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNepitaxialplanartype Forhigh-frequencyamplification/oscillation/mixing ■Features •HightransitionfrequencyfT •Smallcollectoroutputcapacitance(Commonbase,inputopencircuited)Cobandreversetransfercapacitance(Commonbase)Crb •SSS-Minitypepackage,allowingdownsizingoftheequipment | PanasonicPanasonic Corporation 松下松下电器 | |||
HIGHFREQUENCYAMPLIFIERAPPLICATIONS.VIDEOAMPLIFIERAPPLICATIONS,HIGHSPEEDSHITCHINGAPPLICATIONS. FEATURES: •HighTransitionFrequency:fp=200MHz(Typ.) •LowOutputCapacitance:Cob=3.5pF(Typ.) •LowSaturationVoltage :VCE(sat)-0.3V(Max.)atIc100mA,Ig-10mA •Complementaryto25A594. | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
2SC5946 SiliconNPNepitaxialplanartype Forhigh-frequencyamplification/oscillation/mixing ■Features •HightransitionfrequencyfT •SSS-Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepacking. | PanasonicPanasonic Corporation 松下松下电器 | |||
NPNTripleDiffusedPlanarSiliconTransistor-SwitchingRegulatorApplications SwitchingRegulatorApplications Features •Highbreakdownvoltage. •Highreliability. •High-speedswitching. •WideASO. •AdoptionofMBITprocess. | SANYOSanyo 三洋三洋电机株式会社 | |||
SiliconNPNTripleDiffusedTypePowerAmplifierApplications PowerAmplifierApplications •Complementaryto2SA2120 •Recommendedforaudiofrequencyamplifieroutputstage. | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
PowerAmplifierApplications PowerAmplifierApplications •Complementaryto2SA2121 •Recommendedforaudiofrequencyamplifieroutputstage. | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
HighCurrentCapability DESCRIPTION •HighCurrentCapability •HighPowerDissipation •HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=200V(Min) •ComplementtoType2SA2121 APPLICATIONS •Poweramplifierapplications •Recommendedforaudiofrequencyamplifieroutputstage. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
TransistorSiliconNPNTripleDiffusedType PowerAmplifierApplications •Complementaryto2SA2121 •Recommendedforaudiofrequencyamplifieroutputstage. | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
PowerAmplifierApplications PowerAmplifierApplications •Complementaryto2SA2121 •Recommendedforaudiofrequencyamplifieroutputstage. | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SwitchingRegulatorApplications SwitchingRegulatorApplications Features •Highbreakdownvoltage. •High-speedswitching. •WideASO. •AdoptionofMBITprocess. | SANYOSanyo 三洋三洋电机株式会社 | |||
SiliconNPNtriplediffusionplanartypeForpoweramplificationwithhighforwardcurrenttransferratio SiliconNPNtriplediffusionplanartype Forpoweramplificationwithhighforwardcurrenttransferratio ■Features •HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity. •Lowcollector-emittersaturationvoltageVCE(sat) •Full-packpackagewhichcanbeinstalledtoth | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNtriplediffusionplanartypeForpoweramplificationwithhighforwardcurrenttransferratio SiliconNPNtriplediffusionplanartype Forpoweramplificationwithhighforwardcurrenttransferratio ■Features •HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity. •Lowcollector-emittersaturationvoltageVCE(sat) •Full-packpackagewhichcanbeinstalledtoth | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNtriplediffusionplanartypeForpoweramplificationwithhighforwardcurrenttransferratio SiliconNPNtriplediffusionplanartype Forpoweramplificationwithhighforwardcurrenttransferratio ■Features •HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity. •Lowcollector-emittersaturationvoltageVCE(sat) •Full-packpackagewhichcanbeinstalledtoth | PanasonicPanasonic Corporation 松下松下电器 | |||
SwitchingRegulatorApplications SwitchingRegulatorApplications Features •Highbreakdownvoltageandhighreliability. •High-speedswitching. •WideASO. •AdoptionofMBITprocess. | SANYOSanyo 三洋三洋电机株式会社 | |||
NPNTripleDiffusedPlanarSiliconTransistorSwitchingRegulatorApplications SwitchingRegulatorApplications Features •Highbreakdownvoltageandhighreliability. •High-speedswitching. •WideASO. •AdoptionofMBITprocess. | SANYOSanyo 三洋三洋电机株式会社 | |||
SwitchingRegulatorApplications SwitchingRegulatorApplications Features •Highbreakdownvoltageandhighreliability. •High-speedswitching. •WideASO. •AdoptionofMBITprocess. | SANYOSanyo 三洋三洋电机株式会社 | |||
BipolarTransistor(-)50V,(-)3A,LowVCE(sat),(PNP)NPNSinglePCP BipolarTransistor (–)50V,(–)3A,LowVCE(sat),(PNP)NPNSinglePCP Features •AdoptionofMBITprocess •Largecurrentcapacity •Lowcollectortoemittersaturationvoltage •High-speedswitching •Halogenfreecompliance Applicaitons •DC/DCconverter,relaydrivers,lampdrivers,mo | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
PNP/NPNEpitaxialPlanarSiliconTransistorsDC/DCConverterApplications PNP/NPNEpitaxialPlanarSiliconTransistors Features •AdoptionofMBITprocess •Largecurrentcapacity •Lowcollector-to-emittersaturationvoltage •High-speedswitching •Halogenfreecompliance Applicaitons •DC/DCconverter,relaydrivers,lampdrivers,motordrivers,flash | SANYOSanyo 三洋三洋电机株式会社 | |||
BipolarTransistor(-)50V,(-)3A,LowVCE(sat),(PNP)NPNSinglePCP BipolarTransistor (–)50V,(–)3A,LowVCE(sat),(PNP)NPNSinglePCP Features •AdoptionofMBITprocess •Largecurrentcapacity •Lowcollectortoemittersaturationvoltage •High-speedswitching •Halogenfreecompliance Applicaitons •DC/DCconverter,relaydrivers,lampdrivers,mo | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
DC/DCConverterApplications PNP/NPNEpitaxialPlanarSiliconTransistors Features •AdoptionofMBITprocess •Largecurrentcapacity •Lowcollector-to-emittersaturationvoltage •High-speedswitching •Halogenfreecompliance Applicaitons •DC/DCconverter,relaydrivers,lampdrivers,motordrivers,flash | SANYOSanyo 三洋三洋电机株式会社 | |||
BipolarTransistor(-)50V,(-)3A,LowVCE(sat),(PNP)NPNSinglePCP BipolarTransistor (–)50V,(–)3A,LowVCE(sat),(PNP)NPNSinglePCP Features •AdoptionofMBITprocess •Largecurrentcapacity •Lowcollectortoemittersaturationvoltage •High-speedswitching •Halogenfreecompliance Applicaitons •DC/DCconverter,relaydrivers,lampdrivers,mo | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
NPNSILICONTRANSISTOR Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications Features •High-speed. •Highbreakdownvoltage(VCBO=1700V). •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess. | SANYOSanyo 三洋三洋电机株式会社 | |||
Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications Features •High-speed. •Highbreakdownvoltage(VCBO=1700V). •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess. | SANYOSanyo 三洋三洋电机株式会社 | |||
Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications Features •High-speed. •Highbreakdownvoltage(VCBO=1700V). •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess. | SANYOSanyo 三洋三洋电机株式会社 | |||
SMALL-SIGNALTRANSISTOR DESCRIPTION ISAHAYA2SC5974isaminipackageresinsealedsiliconNPNepitaxialtransistorformutingandswitching.application FEATURE ◾Smallpackegeformounting ◾HighEmittertoBasevoltageVEBO=50V ◾HighReversehFE ◾LowONRESISTANCE.RON=1Ω APPLICATION Formuting,switching | ISAHAYAIsahaya Electronics Corporation Isahaya电子公司 | |||
SMALL-SIGNALTRANSISTOR DESCRIPTION ISAHAYA2SC5974AisaminipackageresinsealedsiliconNPNepitaxialtransistorformutingandswitching.application FEATURE ◾Smallpackegeformounting ◾HighEmittertoBasevoltageVEBO=40V ◾HighReversehFE ◾LowONRESISTANCE.RON=1Ω APPLICATION Formuting,switchin | ISAHAYAIsahaya Electronics Corporation Isahaya电子公司 | |||
SMALL-SIGNALTRANSISTOR DESCRIPTION ISAHAYA2SC5974BisaminipackageresinsealedsiliconNPNepitaxialtransistorformutingandswitching.application FEATURE ◾Smallpackegeformounting ◾HighEmittertoBasevoltageVEBO=40V ◾HighReversehFE ◾LowONRESISTANCE.RON=0.75Ω APPLICATION Formuting,swit | ISAHAYAIsahaya Electronics Corporation Isahaya电子公司 | |||
TransistorSiliconNPNEpitaxialType High-SpeedSwitchingApplications DC-DCConverterApplications StrobeFlashApplications •HighDCcurrentgain:hFE=250to400(IC=0.3A) •Lowcollector-emittersaturationvoltage:VCE(sat)=0.14V(max) •High-speedswitching:tf=25ns(typ.) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
NPNEpitaxialPlanarSiliconTransistorHigh-CurrentSwitchingApplications High-CurrentSwitchingApplications Features •AdoptionofFBET,MBITprocess. •Highcurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •NarrowhFEwidth. •Highallowablepowerdissipation. Applications •DC/DCconverter,relaydrivers,lampd | SANYOSanyo 三洋三洋电机株式会社 | |||
NPNEpitaxialPlanarSiliconTransistorHigh-CurrentSwitchingApplications High-CurrentSwitchingApplications Features •AdoptionofFBET,MBITprocess. •Highcurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •NarrowhFEwidth. •Highallowablepowerdissipation. Applications •DC/DCconverter,relaydrivers,lampd | SANYOSanyo 三洋三洋电机株式会社 | |||
NPNEpitaxialPlanarSiliconTransistorDC/DCConverterApplications DC/DCConverterApplications Features •AdoptionofFBETandMBITprocesses. •Highcurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •NarrowhFEwidth. •Highallowablepowerdissipation. Applications •Relaydrivers,lampdrivers,motordrive | SANYOSanyo 三洋三洋电机株式会社 | |||
DC/DCConverterApplications DC/DCConverterApplications Features •AdoptionofFBET,MBITprocess. •Highcurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •NarrowhFEwidth. •Highallowablepowerdissipation. Applications •Relaydrivers,lampdrivers,motordrivers,f | SANYOSanyo 三洋三洋电机株式会社 | |||
ForpoweramplificationForTVVMcircuit SiliconNPNepitaxialplanartype Forpoweramplification ForTVVMcircuit ■Features •SatisfactorylinearityofforwardcurrenttransferratiohFE •Hightransitionfrequency(fT) •Full-packpackagewhichcanbeinstalledtotheheatsinkwithonescrew. | PanasonicPanasonic Corporation 松下松下电器 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •GoodLinearityofhFE •HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=180V(Min) •ComplementtoType2SA2140 APPLICATIONS •Poweramplification •ForTVVMcircuit | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION •GoodLinearityofhFE •HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=180V(Min) •ComplementtoType2SA2140 APPLICATIONS •Poweramplification •ForTVVMcircuit | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
BipolarTransistor50V,2A,LowVCE(sat),NPNSinglePCP Features •AdoptionofMBITProcess •LowCollectortoEmitterSaturationVoltage •LargeCurrentCapacity •HighSpeedSwitching TypicalApplications •VoltageRegulators •RelayDrivers •LampDrivers •ElectricalEquipment | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
NPNEpitaxialPlanarSiliconTransistorHigh-CurrentSwitchingApplications High-CurrentSwitchingApplications Features •AdoptionofMBITprocess. •Highcurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. Applications •Voltageregulators,relaydrivers,lampdrivers,electricalequipment. | SANYOSanyo 三洋三洋电机株式会社 |
2SC59产品属性
- 类型
描述
- 型号
2SC59
- 制造商
ON Semiconductor
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
PANASONIC |
10+ |
SOT523 |
18000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
PANASONIC |
21+ |
SOT523 |
8888888 |
原装正品现货/订货 价格优惠可开票 |
|||
PANASONIC/松下 |
24+ |
SOT-423 |
98000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
PANASONIC |
23+ |
SOT523 |
20000 |
原厂原装正品现货 |
|||
PANASONIC |
23+ |
NA |
6170 |
专业电子元器件供应链正迈科技特价代理QQ1304306553 |
|||
SOT-523 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
PANASONIC |
23+ |
SOT523 |
12000 |
全新原装优势 |
|||
PANASONIC |
2023+ |
SOT523 |
50000 |
原装现货 |
|||
PANASONIC/松下 |
22+ |
SOT523 |
228229 |
原装正品现货,可开13个点税 |
|||
PANASONIC/松下 |
22+ |
SOT523 |
8500 |
只做原装正品假一赔十!正规渠道订货! |
2SC59规格书下载地址
2SC59参数引脚图相关
- 500t
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2SC608
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- 2SC606
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- 2SC604
- 2SC603
- 2SC602
- 2SC601
- 2SC600
- 2SC60
- 2SC599
- 2SC598
- 2SC597
- 2SC596
- 2SC595
- 2SC5945
- 2SC594
- 2SC5939
- 2SC5938
- 2SC5935
- 2SC5933
- 2SC5932
- 2SC5931
- 2SC5930
- 2SC593
- 2SC5926
- 2SC592
- 2SC5916
- 2SC5915
- 2SC5914
- 2SC5913
- 2SC5912
- 2SC591
- 2SC5909
- 2SC5906
- 2SC5905
- 2SC5904
- 2SC5902
- 2SC5900
- 2SC590
- 2SC58A
- 2SC5899
- 2SC5896
- 2SC5895
- 2SC5894
- 2SC5890
- 2SC589
- 2SC5889
- 2SC5888
- 2SC5887
- 2SC5886
- 2SC5885
- 2SC5884
- 2SC5882
- 2SC5881
- 2SC5880
- 2SC588
- 2SC587A
- 2SC5876
- 2SC5875
- 2SC587
- 2SC5868
- 2SC5866
- 2SC5865
- 2SC586
- 2SC585
- 2SC584
- 2SC583
- 2SC582
- 2SC581
- 2SC580
- 2SC58
- 2SC579
- 2SC578
- 2SC577
- 2SC576
- 2SC575
- 2SC574
- 2SC573
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2SC5826中文资料库
2019-2-152SC945_2SC945晶体管_2SC945中文资料_2SC945代换
2SC945、2SC945晶体管、2SC945中文资料、2SC945代换、c945可以用什么代替、c945用什么型号代替、2SC945配对管、2SC945放大倍数、2SC945品牌、C945、C945三极管、C945晶体管、C945晶体三极管、2SC945三极管、2SC945晶体管、2SC945晶体三极管
2018-12-19
DdatasheetPDF页码索引
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