型号 功能描述 生产厂家&企业 LOGO 操作
2SC5886A

High-SpeedSwitchingApplications

High-SpeedSwitchingApplications DC/DCConverterApplications •HighDCcurrentgain:hFE=400to1000(IC=0.5A) •Lowcollector-emittersaturation:VCE(sat)=0.22V(max) •High-speedswitching:tf=95ns(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC5886A

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC5886A

iscSiliconNPNPowerTransistor

DESCRIPTION ·Highswitchingspeedtime ·Lowcollector-to-emittersaturationvoltage ·Fastswitchingspeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·High-SpeedSwitchingApplications ·DC/DCConverterApplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

High-SpeedSwtchingApplications

High-SpeedSwtchingApplications DC-DCConverterApplications •HighDCcurrentgain:hFE=400to1000(IC=0.5A) •Lowcollector-emittersaturation:VCE(sat)=0.22V(max) •High-speedswitching:tf=55ns(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR) 描述:PB-F VOLTAGE REGULATOR NEW PW-MO 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

包装:散装 描述:TRANSISTOR NPN BIPO PWMOLD 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

2SC5886A产品属性

  • 类型

    描述

  • 型号

    2SC5886A

  • 功能描述

    两极晶体管 - BJT NPN VCE 0.22V 95ns 400 to 1000 hFE 5A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2024-4-25 16:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
12+
TO-252
15000
全新原装,绝对正品,公司现货供应。
POWER INTEGRATIONS/帕沃英蒂格
2022+
TO252
57550
TOSHIBA(东芝)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
TOSHIBA
22+
TO-252
5100
TOSHIBA/东芝
2022
TO-252
80000
原装现货,OEM渠道,欢迎咨询
TOSHIBA
07+
TO-252
36800
TOSHIBA
2022
TO252
1351
原厂原装正品,价格超越代理
TOSHIBA/东芝
TO252
7906200
TOSHIBA/东芝
23+
NA/
1100
优势代理渠道,原装正品,可全系列订货开增值税票
TOS
1845+
TO252
5790
只做原装!量大可以订货!特价支持实单!

2SC5886A芯片相关品牌

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  • SUNMATE
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