位置:首页 > IC中文资料第997页 > 2SB169
2SB169晶体管资料
2SB169别名:2SB169三极管、2SB169晶体管、2SB169晶体三极管
2SB169生产厂家:日本富士通公司
2SB169制作材料:Ge-PNP
2SB169性质:低频或音频放大 (LF)
2SB169封装形式:直插封装
2SB169极限工作电压:9V
2SB169最大电流允许值:0.1A
2SB169最大工作频率:<1MHZ或未知
2SB169引脚数:3
2SB169最大耗散功率:0.15W
2SB169放大倍数:β=85
2SB169图片代号:C-47
2SB169vtest:9
2SB169htest:999900
- 2SB169atest:.1
2SB169wtest:.15
2SB169代换 2SB169用什么型号代替:AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N11194,2SB54,2SB56,3AX52A,
2SB169价格
参考价格:¥0.7931
型号:2SB1690KT146 品牌:Rohm 备注:这里有2SB169多少钱,2024年最近7天走势,今日出价,今日竞价,2SB169批发/采购报价,2SB169行情走势销售排行榜,2SB169报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
Generalpurposeamplification(-12V,-2A) Features 1)Acollectorcurrentislarge. 2)Collectorsaturationvoltageislow. VCE(sat):max.−180mV atIC=−1A/IB=−50mA Applications Lowfrequencyamplifier Deiver | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Generalpurposeamplification(-12V,-2A) Features 1)Acollectorcurrentislarge. 2)Collectorsaturationvoltageislow. VCE(sat)≤−180mV atIC=−1A/IB=−50mA Applications Lowfrequencyamplifier Deiver | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
SiliconPNPEpitaxialPlanerLowFrequencyPowerAmplifier Features •Smallsizepackage:MPAK(SC–59A) •LargeMaximumcurrent:IC=–1A •Lowcollectortoemittersaturationvoltage:VCE(sat)=–0.3Vmax.(atIC/IB=–0.5A/–0.05A) •Highpowerdissipation:PC=800mW(whenusingaluminaceramicboard(25x60x0.7mm)) •Complementarypairwit | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconPNPEpitaxialPlanerLowFrequencyPowerAmplifier Features •Smallsizepackage:MPAK(SC–59A) •LargeMaximumcurrent:IC=–1A •Lowcollectortoemittersaturationvoltage:VCE(sat)=–0.3Vmax.(atIC/IB=–0.5A/–0.05A) •Highpowerdissipation:PC=800mW(whenusingaluminaceramicboard(25x60x0.7mm)) •Complementarypairwit | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconPNPepitaxialplanartype SiliconPNPepitaxialplanartype Forgeneralamplification ■Features •LargecollectorcurrentIC •Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagazinepacking | PanasonicPanasonic Corporation 松下松下电器 | |||
Generalpurposeamplification(-30V,-1A) Features 1)Acollectorcurrentislarge 2)Collector-Emittersaturationvoltageislow. VCE(sat)≦-380mVatIC=-500mA/IB=-25mA 3)Complementsthe2SD2656. Application LOWFREQUENCYAMPLIFIER | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PNPGneralPurposeTransistors Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •HighDCCurrentGain •HighCollectorCurrent •LowCollector-emitterSaturationVoltage •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavail | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
SOT-323Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●HighDCCurrentGain ●HighCollectorCurrent ●LowCollector-emitterSaturationVoltage APPLICATIONS ●LowFrequencyAmplifierDrive | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
SOT-323Plastic-EncapsulateTransistors FEATURES HighDCCurrentGain HighCollectorCurrent LowCollector-emitterSaturationVoltage APPLICATIONS LowFrequencyAmplifierDrive | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
Lowfrequencyamplifier Features 1)Acollectorcurrentislarge. 2)VCE(sat)≤−370mVatIC=−1A/IB=−50mA Application Lowfrequencyamplifier Driver | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Lowfrequencyamplifier Features 1)Acollectorcurrentislarge. 2)VCE(sat)≤−370mVAtIC=−1A/IB=−50mA Application Lowfrequencyamplifier Driver | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
LowFrequencyAmplifier(-12V,-2A) Features LowVCE(sat) VCE(sat)≤−180mV (IC/IB=−1A/−50mA) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Lowfrequencyamplifier Features 1)Acollectorcurrentislarge. 2)VCE(sat)≤−370mVatIC=−1A/IB=−50mA Application LowfrequencyamplifierDriver | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Lowfrequencyamplifier Features 1)Acollectorcurrentislarge. 2)VCE(sat)≤−370mVatIC=−1A/IB=−50mA Application LowfrequencyamplifierDriver | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Lowfrequencyamplifier Features 1)Acollectorcurrentislarge. 2)VCE(sat)≤−370mVatIC=−1A/IB=−50mA Application LowfrequencyamplifierDriver | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
SiliconPNPepitaxialplanartype SiliconPNPepitaxialplanartype Forpoweramplification ■Features •Lowcollector-emittersaturationvoltageVCE(sat) •MiniPowertypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagazinepacking. | PanasonicPanasonic Corporation 松下松下电器 | |||
Generalpurposeamplification(−12V,−2A) 文件:75.55 Kbytes Page:3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Generalpurposeamplification(??2V,??A) 文件:63.48 Kbytes Page:3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Generalpurposeamplification(??2V,??A) 文件:63.48 Kbytes Page:3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Generalpurposeamplification(−12V,−2A) 文件:75.55 Kbytes Page:3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
封装/外壳:SC-96 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 12V 2A TSMT3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
SiliconPNPEpitaxialPlanerLowFrequencyPowerAmplifier 文件:94.48 Kbytes Page:6 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconPNPEpitaxialPlanerLowFrequencyPowerAmplifier 文件:94.48 Kbytes Page:6 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconPNPEpitaxialPlanerLowFrequencyPowerAmplifier 文件:160.84 Kbytes Page:6 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconPNPEpitaxialPlanerLowFrequencyPowerAmplifier 文件:94.48 Kbytes Page:6 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconPNPEpitaxialPlanerLowFrequencyPowerAmplifier 文件:94.48 Kbytes Page:6 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 20V 0.5A MINI3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | Panasonic Electronic Components Panasonic Electronic Components | |||
Generalpurposeamplification(??0V,??A) 文件:95.01 Kbytes Page:3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Generalpurposeamplification(−30V,−1A) 文件:76.16 Kbytes Page:3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Generalpurposeamplification(??0V,??A) 文件:95.01 Kbytes Page:3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Generalpurposeamplification(−30V,−1A) 文件:76.16 Kbytes Page:3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Lowfrequencyamplifier 文件:112.93 Kbytes Page:3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Lowfrequencyamplifier 文件:112.93 Kbytes Page:3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Lowfrequencyamplifier 文件:79.18 Kbytes Page:3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Lowfrequencyamplifier 文件:123.56 Kbytes Page:3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Lowfrequencyamplifier 文件:123.56 Kbytes Page:3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Lowfrequencyamplifier 文件:79.18 Kbytes Page:3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 |
2SB169产品属性
- 类型
描述
- 型号
2SB169
- 功能描述
两极晶体管 - BJT PNP 12V 2A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ROHM/罗姆 |
23+ |
SOT-23 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
ROHM |
2016+ |
SOT-23 |
14574 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
TOSHIBA |
22+ |
SOT-23 |
6500 |
||||
ROHM/罗姆 |
23+ |
NA/ |
1055 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ROHM |
1844+ |
SOT-346 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ROHM |
2206+ |
SOT-23 |
9600 |
原装正品现货,优势价格批发 |
|||
ROHM/罗姆 |
13+14+ |
SMT-3 |
880000 |
明嘉莱只做原装正品现货 |
|||
ROHM |
21+ |
SOT-346 |
21000 |
一级代理进口原装!长期供应!绝对优势价格(诚信经营 |
|||
ROHM/罗姆 |
2022 |
SOT23 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
ROHM |
2008++ |
SOT-23 |
32700 |
新进库存/原装 |
2SB169规格书下载地址
2SB169参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2SB181A
- 2SB181
- 2SB180A
- 2SB180
- 2SB18
- 2SB17A
- 2SB179
- 2SB178B
- 2SB178A
- 2SB178(Q)
- 2SB177
- 2SB176
- 2SB175
- 2SB174
- 2SB173
- 2SB172
- 2SB1714
- 2SB1713
- 2SB1710
- 2SB171
- 2SB1709
- 2SB1708
- 2SB1707
- 2SB1706
- 2SB1705
- 2SB1700
- 2SB170
- 2SB17
- 2SB16A
- 2SB1699
- 2SB1698
- 2SB1697
- 2SB1695
- 2SB1694
- 2SB1693
- 2SB1691
- 2SB1690
- 2SB1689
- 2SB1688
- 2SB1686
- 2SB1685
- 2SB1683
- 2SB168
- 2SB1679
- 2SB1678
- 2SB1674
- 2SB1672
- 2SB167
- 2SB1669
- 2SB1668
- 2SB1667
- 2SB1664
- 2SB1663
- 2SB1662
- 2SB166
- 2SB1659
- 2SB1658
- 2SB1657
- 2SB1655
- 2SB1653
- 2SB1651
- 2SB165
- 2SB1649
- 2SB1648
- 2SB1647
- 2SB1645
- 2SB1643
- 2SB1642
- 2SB1641
- 2SB1640
- 2SB164
2SB169数据表相关新闻
2SB562L-TO92NLK-B-TG_UTC代理商
2SB562L-TO92NLK-B-TG_UTC代理商
2023-3-142SB776L-TO252R-P-TG_UTC代理商
2SB776L-TO252R-P-TG_UTC代理商
2023-2-242SA928AL-TO92NLB-Y-TG
2SA928AL-TO92NLB-Y-TG
2023-2-12SA812-T1B-A/S6 原装正品现货
支持实单价格优势有单必成
2022-3-302SB649 MOS
www.jskj-ic.com
2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P:PNP硅外延晶体管的特点如下:·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息)·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80