2SB169晶体管资料

  • 2SB169别名:2SB169三极管、2SB169晶体管、2SB169晶体三极管

  • 2SB169生产厂家:日本富士通公司

  • 2SB169制作材料:Ge-PNP

  • 2SB169性质:低频或音频放大 (LF)

  • 2SB169封装形式:直插封装

  • 2SB169极限工作电压:9V

  • 2SB169最大电流允许值:0.1A

  • 2SB169最大工作频率:<1MHZ或未知

  • 2SB169引脚数:3

  • 2SB169最大耗散功率:0.15W

  • 2SB169放大倍数:β=85

  • 2SB169图片代号:C-47

  • 2SB169vtest:9

  • 2SB169htest:999900

  • 2SB169atest:.1

  • 2SB169wtest:.15

  • 2SB169代换 2SB169用什么型号代替:AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N11194,2SB54,2SB56,3AX52A,

2SB169价格

参考价格:¥0.7931

型号:2SB1690KT146 品牌:Rohm 备注:这里有2SB169多少钱,2024年最近7天走势,今日出价,今日竞价,2SB169批发/采购报价,2SB169行情走势销售排行榜,2SB169报价。
型号 功能描述 生产厂家&企业 LOGO 操作

Generalpurposeamplification(-12V,-2A)

Features 1)Acollectorcurrentislarge. 2)Collectorsaturationvoltageislow. VCE(sat):max.−180mV atIC=−1A/IB=−50mA Applications Lowfrequencyamplifier Deiver

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Generalpurposeamplification(-12V,-2A)

Features 1)Acollectorcurrentislarge. 2)Collectorsaturationvoltageislow. VCE(sat)≤−180mV atIC=−1A/IB=−50mA Applications Lowfrequencyamplifier Deiver

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

SiliconPNPEpitaxialPlanerLowFrequencyPowerAmplifier

Features •Smallsizepackage:MPAK(SC–59A) •LargeMaximumcurrent:IC=–1A •Lowcollectortoemittersaturationvoltage:VCE(sat)=–0.3Vmax.(atIC/IB=–0.5A/–0.05A) •Highpowerdissipation:PC=800mW(whenusingaluminaceramicboard(25x60x0.7mm)) •Complementarypairwit

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPNPEpitaxialPlanerLowFrequencyPowerAmplifier

Features •Smallsizepackage:MPAK(SC–59A) •LargeMaximumcurrent:IC=–1A •Lowcollectortoemittersaturationvoltage:VCE(sat)=–0.3Vmax.(atIC/IB=–0.5A/–0.05A) •Highpowerdissipation:PC=800mW(whenusingaluminaceramicboard(25x60x0.7mm)) •Complementarypairwit

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPNPepitaxialplanartype

SiliconPNPepitaxialplanartype Forgeneralamplification ■Features •LargecollectorcurrentIC •Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagazinepacking

PanasonicPanasonic Corporation

松下松下电器

Panasonic

Generalpurposeamplification(-30V,-1A)

Features 1)Acollectorcurrentislarge 2)Collector-Emittersaturationvoltageislow. VCE(sat)≦-380mVatIC=-500mA/IB=-25mA 3)Complementsthe2SD2656. Application LOWFREQUENCYAMPLIFIER

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

PNPGneralPurposeTransistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •HighDCCurrentGain •HighCollectorCurrent •LowCollector-emitterSaturationVoltage •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavail

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

SOT-323Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●HighDCCurrentGain ●HighCollectorCurrent ●LowCollector-emitterSaturationVoltage APPLICATIONS ●LowFrequencyAmplifierDrive

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

SOT-323Plastic-EncapsulateTransistors

FEATURES HighDCCurrentGain HighCollectorCurrent LowCollector-emitterSaturationVoltage APPLICATIONS LowFrequencyAmplifierDrive

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

Lowfrequencyamplifier

Features 1)Acollectorcurrentislarge. 2)VCE(sat)≤−370mVatIC=−1A/IB=−50mA Application Lowfrequencyamplifier Driver

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Lowfrequencyamplifier

Features 1)Acollectorcurrentislarge. 2)VCE(sat)≤−370mVAtIC=−1A/IB=−50mA Application Lowfrequencyamplifier Driver

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

LowFrequencyAmplifier(-12V,-2A)

Features LowVCE(sat) VCE(sat)≤−180mV (IC/IB=−1A/−50mA)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Lowfrequencyamplifier

Features 1)Acollectorcurrentislarge. 2)VCE(sat)≤−370mVatIC=−1A/IB=−50mA Application LowfrequencyamplifierDriver

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Lowfrequencyamplifier

Features 1)Acollectorcurrentislarge. 2)VCE(sat)≤−370mVatIC=−1A/IB=−50mA Application LowfrequencyamplifierDriver

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Lowfrequencyamplifier

Features 1)Acollectorcurrentislarge. 2)VCE(sat)≤−370mVatIC=−1A/IB=−50mA Application LowfrequencyamplifierDriver

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

SiliconPNPepitaxialplanartype

SiliconPNPepitaxialplanartype Forpoweramplification ■Features •Lowcollector-emittersaturationvoltageVCE(sat) •MiniPowertypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagazinepacking.

PanasonicPanasonic Corporation

松下松下电器

Panasonic

Generalpurposeamplification(−12V,−2A)

文件:75.55 Kbytes Page:3 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Generalpurposeamplification(??2V,??A)

文件:63.48 Kbytes Page:3 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Generalpurposeamplification(??2V,??A)

文件:63.48 Kbytes Page:3 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Generalpurposeamplification(−12V,−2A)

文件:75.55 Kbytes Page:3 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

封装/外壳:SC-96 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 12V 2A TSMT3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

SiliconPNPEpitaxialPlanerLowFrequencyPowerAmplifier

文件:94.48 Kbytes Page:6 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPNPEpitaxialPlanerLowFrequencyPowerAmplifier

文件:94.48 Kbytes Page:6 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPNPEpitaxialPlanerLowFrequencyPowerAmplifier

文件:160.84 Kbytes Page:6 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPNPEpitaxialPlanerLowFrequencyPowerAmplifier

文件:94.48 Kbytes Page:6 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPNPEpitaxialPlanerLowFrequencyPowerAmplifier

文件:94.48 Kbytes Page:6 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 20V 0.5A MINI3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Panasonic Electronic Components

Panasonic Electronic Components

Panasonic Electronic Components

Generalpurposeamplification(??0V,??A)

文件:95.01 Kbytes Page:3 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Generalpurposeamplification(−30V,−1A)

文件:76.16 Kbytes Page:3 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Generalpurposeamplification(??0V,??A)

文件:95.01 Kbytes Page:3 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Generalpurposeamplification(−30V,−1A)

文件:76.16 Kbytes Page:3 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Lowfrequencyamplifier

文件:112.93 Kbytes Page:3 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Lowfrequencyamplifier

文件:112.93 Kbytes Page:3 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Lowfrequencyamplifier

文件:79.18 Kbytes Page:3 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Lowfrequencyamplifier

文件:123.56 Kbytes Page:3 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Lowfrequencyamplifier

文件:123.56 Kbytes Page:3 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Lowfrequencyamplifier

文件:79.18 Kbytes Page:3 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

2SB169产品属性

  • 类型

    描述

  • 型号

    2SB169

  • 功能描述

    两极晶体管 - BJT PNP 12V 2A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2024-4-25 18:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM/罗姆
23+
SOT-23
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
ROHM
2016+
SOT-23
14574
只做原装,假一罚十,公司可开17%增值税发票!
TOSHIBA
22+
SOT-23
6500
ROHM/罗姆
23+
NA/
1055
优势代理渠道,原装正品,可全系列订货开增值税票
ROHM
1844+
SOT-346
9852
只做原装正品假一赔十为客户做到零风险!!
ROHM
2206+
SOT-23
9600
原装正品现货,优势价格批发
ROHM/罗姆
13+14+
SMT-3
880000
明嘉莱只做原装正品现货
ROHM
21+
SOT-346
21000
一级代理进口原装!长期供应!绝对优势价格(诚信经营
ROHM/罗姆
2022
SOT23
80000
原装现货,OEM渠道,欢迎咨询
ROHM
2008++
SOT-23
32700
新进库存/原装

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