2SB166晶体管资料

  • 2SB166别名:2SB166三极管、2SB166晶体管、2SB166晶体三极管

  • 2SB166生产厂家:日本日电公司

  • 2SB166制作材料:Ge-PNP

  • 2SB166性质:低频或音频放大 (LF)_输出极 (E)

  • 2SB166封装形式:直插封装

  • 2SB166极限工作电压:30V

  • 2SB166最大电流允许值:0.1A

  • 2SB166最大工作频率:<1MHZ或未知

  • 2SB166引脚数:3

  • 2SB166最大耗散功率:0.18W

  • 2SB166放大倍数:β=100

  • 2SB166图片代号:D-9

  • 2SB166vtest:30

  • 2SB166htest:999900

  • 2SB166atest:.1

  • 2SB166wtest:.18

  • 2SB166代换 2SB166用什么型号代替:AC122,AC125,AC126,AC151,AC152,2N1191,2N1192,2N1193,2N11194,2SB54,2SB56,3AX52A,

型号 功能描述 生产厂家&企业 LOGO 操作

SCHOTTKYBARRIERDIODECHIPS

DESCRIPTION ➤2SB166040MLisaschottkybarrierdiodechips fabricatedinsiliconepitaxialplanartechnology; ➤Lowpowerlosses,highefficiency; ➤Guardringconstructionfortransientprotection; ➤HighESDcapability; ➤Highsurgecapability; ➤Packagedproductsarewidelyuse

SILANSilan

士兰

SILAN

LOWIRSCHOTTKYBARRIERDIODECHIPS

DESCRIPTION ➤2SB166100MAisaschottkybarrierdiodechips fabricatedinsiliconepitaxialplanartechnology; ➤Duetospecialschottkybarrierstructure,thechips haveverylowreverseleakagecurrent(typical IR=0.002mA@Vr=100V)andmaximum150°C opera

SILANSilan

士兰

SILAN

PNPEpitaxialPlanarSiliconDarlingtonTransistorDriverApplications

PNPEpitaxialPlanarSiliconDarlingtonTransistor Features •HighDCcurrentgain. •LargecurrentcapacityandwideASO. •Lowsaturationvoltage. Applications •Motordrivers,printerhammerdrivers,relaydrivers,voltageregulatorcontrol.

SANYOSanyo

三洋三洋电机株式会社

SANYO

TRANSISTOR(AUDIOFREQUENCYPOWERAMPLIFIERAPPLICATIONS)

AudioFrequencyPowerAmplifierApplications •Lowsaturationvoltage:VCE(sat)=−1.7V(max) (IC=−3A,IB=−0.3A)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconPNPTripleDiffusedType

■Features ●Lowsaturationvoltage ●AudioFrequencyPowerAmplifierApplications

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

ForPoweramplification(-100V,-8A)

ForPoweramplification(−100V,−8A) Features 1)HighhFEbydarlingtonconnection. 2)Built-inresistorsbetweenbaseandemitter. 3)Damperdiodeisincorporated. Applications Relaydrive Motordrive

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

ForPoweramplification(100V,8A)

PowerTransistor(100V,8A) Features 1)DarlingtonconnectionforhighDCcurrentgain. 2)Built-inresistorbetweenbaseandemitter. 3)Built-indamperdiode. 4)Complementsthe2SB1668.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE

EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING

PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING The2SB1669isapowertransistorthatcanbedirectlydrivenfromtheoutputofanIC.ThistransistorisidealforOAandFAequipmentsuchasmotorandsolenoiddrivers. FEATURES •HighDCcurrentamplifierratehFE≥100(VCE=−5.0

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

iscSiliconPNPPowerTransistor

DESCRIPTION •HighDCcurrentamplifierrate hFE≥100@VCE=-5V,IC=-0.5A •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •The2SB1669-Zisapowertransistorthatcanbedirectlydriven fromtheoutputofanIC.Thistransistorisidea

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SILICONPOWERTRANSISTOR

PNPSILICONEPITAXIALTRANSISTOR FORHIGH-SPEEDSWITCHING The2SB1669isapowertransistorthatcanbedirectlydrivenfrom theoutputofanIC.ThistransistorisidealforOAandFAequipment suchasmotorandsolenoiddrivers. FEATURES HighDCcurrentamplifierrate hFE≥100(VCE=−

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SILICONPOWERTRANSISTOR

PNPSILICONEPITAXIALTRANSISTOR FORHIGH-SPEEDSWITCHING The2SB1669isapowertransistorthatcanbedirectlydrivenfrom theoutputofanIC.ThistransistorisidealforOAandFAequipment suchasmotorandsolenoiddrivers. FEATURES HighDCcurrentamplifierrate hFE≥100(VCE=−

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING

PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING The2SB1669isapowertransistorthatcanbedirectlydrivenfromtheoutputofanIC.ThistransistorisidealforOAandFAequipmentsuchasmotorandsolenoiddrivers. FEATURES •HighDCcurrentamplifierratehFE≥100(VCE=−5.0

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING

PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING The2SB1669isapowertransistorthatcanbedirectlydrivenfromtheoutputofanIC.ThistransistorisidealforOAandFAequipmentsuchasmotorandsolenoiddrivers. FEATURES •HighDCcurrentamplifierratehFE≥100(VCE=−5.0

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SILICONPOWERTRANSISTOR

PNPSILICONEPITAXIALTRANSISTOR FORHIGH-SPEEDSWITCHING The2SB1669isapowertransistorthatcanbedirectlydrivenfrom theoutputofanIC.ThistransistorisidealforOAandFAequipment suchasmotorandsolenoiddrivers. FEATURES HighDCcurrentamplifierrate hFE≥100(VCE=−

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

iscSiliconNPNPowerTransistor

DESCRIPTION •HighDCcurrentamplifierratehFE≥100@VCE=-5V,IC=-0.5A •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •The2SB1669-ZisapowertransistorthatcanbedirectlydrivenfromtheoutputofanIC.Thistransi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPTripleDiffusedType

文件:161.88 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

AudioFrequencyPowerAmplifierApplications

文件:178.29 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconPNPTripleDiffusedType

文件:161.88 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

AudioFrequencyPowerAmplifierApplications

文件:178.29 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

PNPTransistors

文件:1.35638 Mbytes Page:3 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

PNPTransistors

文件:1.35638 Mbytes Page:3 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

PNPTransistors

文件:1.35638 Mbytes Page:3 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

AudioFrequencyPowerAmplifierApplications

文件:178.29 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

PNPTransistors

文件:1.35638 Mbytes Page:3 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

SILICONPOWERTRANSISTOR

文件:262.029 Kbytes Page:8 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SB166产品属性

  • 类型

    描述

  • 型号

    2SB166

  • 制造商

    Renesas Electronics

  • 功能描述

    Cut Tape

  • 制造商

    Renesas

  • 功能描述

    Trans GP BJT PNP 60V 3A 3-Pin(3+Tab) TO-220AB

更新时间:2024-4-19 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
23+
NA/
6071
原装现货,当天可交货,原型号开票
NEC
21+
TO263
1709
REN
1715+
SOP
251156
只做原装正品现货假一赔十!
NEC
24+
TO263
880000
明嘉莱只做原装正品现货
NEC
22+23+
TO263
33633
绝对原装正品全新进口深圳现货
NEC
2022+
TO263
57550
NEC
2008++
TO-252
18200
新进库存/原装
NEC
22+
TO263
12245
现货,原厂原装假一罚十!
NEC
TO263
265209
假一罚十原包原标签常备现货!
NEC
2021+
6000

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