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位置：首页 > IC中文资料第965页 > 2SB142

2SB142晶体管资料

  • 2SB142别名：2SB142三极管、2SB142晶体管、2SB142晶体三极管

  • 2SB142生产厂家：日本索尼公司

  • 2SB142制作材料：Ge-PNP

  • 2SB142性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L

  • 2SB142封装形式：直插封装

  • 2SB142极限工作电压：30V

  • 2SB142最大电流允许值：1A

  • 2SB142最大工作频率：<1MHZ或未知

  • 2SB142引脚数：2

  • 2SB142最大耗散功率：10W

  • 2SB142放大倍数：β>12

  • 2SB142图片代号：E-44

  • 2SB142vtest：30

  • 2SB142htest：999900

  • 2SB142atest：1

  • 2SB142wtest：10

  • 2SB142代换 2SB142用什么型号代替：AD149,AD166,2N2137,2N2142,2SB449,3AD50A,

2SB142价格

参考价格：￥0.4841

型号：2SB1424T100Q 品牌：ROHM 备注：这里有2SB142多少钱，2024年最近7天走势，今日出价，今日竞价，2SB142批发/采购报价，2SB142行情走势销售排行榜，2SB142报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SB1420

SiliconPNPEpitaxialPlanarTransistor(ChopperRegulator,DCMotorDriverandGeneralPurpose)

SiliconPNPEpitaxialPlanarTransistor Application:ChopperRegulator,DCMotorDriverandGeneralPurpose

SankenSanken Electric Co Ltd.

三垦日本三垦

Sanken
2SB1420

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-120V(Min) •HighDCCurrentGain-:hFE=2000(Min)@IC=-8A •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Driverforchopperregulator,DCmotordriverandgeneralpurposeappl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB1421

iscSiliconPNPPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-140V(Min) •WideAreaofSafeOperation •ComplementtoType2SD2140 •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Designedforhighpoweramplificati

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB1421

SiliconPNPPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-140V(Min) •WideAreaofSafeOperation •ComplementtoType2SD2140 APPLICATIONS •Designedforhighpoweramplifications. •OptimumfortheoutputstageofaHiFiaudioamplifier

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2SB1424

PNPTransistors

■Features ●ExcellentDCcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementaryto2SD2150

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
2SB1424

LowVCE(sat)Transistor(-20V,-3A)

FEATURES LowVCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA). ExcellentDCcurrentgaincharacterisitics. Complementarythe2SD2150. APPLICATIONS Thisdeviceisdesignedasageneralpurposeamplifier andswitching.

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SB1424

EpitaxialPlanarPNPTransistors

EpitaxialPlanarPNPTransistors P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON
2SB1424

LowVce(sat)Transistor(-20V,-3A)

Features 1)LowVCE(sat).VCE(sat)=-0.2V(Typ.)(IC/IB=-2A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2150/2SC4115S.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SB1424

Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES Powerdissipation PCM:600mW(Tamb=25℃) Collectorcurrent ICM:-3A Collector-basevoltage V(BR)CBO:-20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL
2SB1424

LowVCE(sat)Transistor

■Features ●ExcellentDCcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementaryto2SD2150

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SB1424

PNPSiliconMediumPowerTransistor

FEATURES Powerdissipation PCM:600mWTemp.=25°C Collectorcurrent ICM:-3A Collector-basevoltage V(BR)CBO:-20V Operatingandstoragejunctiontemperaturerange TJTstg:-55°Cto+150°C

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SB1424

TRANSISTOR(PNP)

FEATURES ●ExcellentDCCurrentGain ●LowCollector-emittersaturationvoltage ●Complementthe2SD2150

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI
2SB1424

LOWVCE(SAT)TRANSISTOR

LOWVCE(SAT)TRANSISTOR DESCRIPTION AstheUTCPNPsilicontransistor,the2SB1424istheepitaxialplanartypetransistorwhichhasverylowVCE(SAT)(Collector-emittersaturationvoltage). FEATURES *VerygoodDCcurrentgain *VerylowVCE(SAT)=-0.2V@IC/IB=(-2A)/(-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1424

SOT-89-3LPlastic-EncapsulatePNPTransistors

FEATURES ●ExcellentDCcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementthe2SD2150

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
2SB1424

SOT-89-3LPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●ExcellentDCcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementthe2SD2150

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
2SB1424

LowVCE(sat)Transistor

FEATURES ●LowVCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA). ●ExcellentDCcurrentgaincharacterisitics. ●Complementarythe2SD2150. APPLICATIONS ●Thisdeviceisdesignedasageneralpurposeamplifier andswitching.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
2SB1424

LowVCE(SAT)0.2V(Typ.)(IC/IB=-2A/-0.1mA).

FEATURES •LowVCE(SAT)=-0.2V(Typ.)(IC/IB=-2A/-0.1mA). •ExcellentDCcurrentgaincharacterisitics. •Complementarythe2SD2150.

MAKOSEMI

MAKO SEMICONDUCTOR CO.,LIMITED

MAKOSEMI
2SB1424

LowVCE(sat)Transistor(??0V,??A)

Features 1)LowVCE(sat). VCE(sat)=−0.2V(Typ.) (IC/IB=−2A/−0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2150/2SC4115S. Structure Epitaxialplanartype PNPsilicontransistor

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SB1424

SiliconPNPtransistorinaSOT-89PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-89PlasticPackage. Features LowVCE(sat),excellentDCcurrentgaincharacteristics. Applications Generalpurposeamplifier.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SB1424

Plastic-EncapsulateTransistors

FEATURES •LowVCE(SAT)=-0.2V(Typ.)(IC/IB=-2A/-0.1mA). •ExcellentDCcurrentgaincharacterisitics. •Complementarythe2SD2150.

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH
2SB1424

TRANSISTOR(PNP)

FEATURES Powerdissipation PCM:600mW(Tamb=25℃) Collectorcurrent ICM:-3A Collector-basevoltage V(BR)CBO:-20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
2SB1424G-X-AB3-R

LOWVCE(SAT)TRANSISTOR

LOWVCE(SAT)TRANSISTOR DESCRIPTION AstheUTCPNPsilicontransistor,the2SB1424istheepitaxialplanartypetransistorwhichhasverylowVCE(SAT)(Collector-emittersaturationvoltage). FEATURES *VerygoodDCcurrentgain *VerylowVCE(SAT)=-0.2V@IC/IB=(-2A)/(-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1424L-X-AB3-R

LOWVCE(SAT)TRANSISTOR

LOWVCE(SAT)TRANSISTOR DESCRIPTION AstheUTCPNPsilicontransistor,the2SB1424istheepitaxialplanartypetransistorwhichhasverylowVCE(SAT)(Collector-emittersaturationvoltage). FEATURES *VerygoodDCcurrentgain *VerylowVCE(SAT)=-0.2V@IC/IB=(-2A)/(-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1424-Q

PNPTransistors

■Features ●ExcellentDCcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementaryto2SD2150

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
2SB1424-R

PNPTransistors

■Features ●ExcellentDCcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementaryto2SD2150

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
2SB1424T100Q

LowVCE(sat)Transistor(??0V,??A)

Features 1)LowVCE(sat). VCE(sat)=−0.2V(Typ.) (IC/IB=−2A/−0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2150/2SC4115S. Structure Epitaxialplanartype PNPsilicontransistor

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SB1424-X-AB3-R

LOWVCE(SAT)TRANSISTOR

LOWVCE(SAT)TRANSISTOR DESCRIPTION AstheUTCPNPsilicontransistor,the2SB1424istheepitaxialplanartypetransistorwhichhasverylowVCE(SAT)(Collector-emittersaturationvoltage). FEATURES *VerygoodDCcurrentgain *VerylowVCE(SAT)=-0.2V@IC/IB=(-2A)/(-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1426

PNPPlasticEncapsulatedTransistor

FEATURES ●GeneralPurposeSwitchingandAmplification

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SB1426

TECHNICALSPECIFICATIONSOFPNPEPITAXIALPLANARTRANSISTOR

Description DesignedforDC-to-DCconverterapplications.

DCCOMDc Components

直流元件直流元件有限公司

DCCOM
2SB1426

SiliconPNPtransistorinaTO-92PlasticPackage

Description SiliconPNPtransistorinaTO-92PlasticPackage Features Lowsaturationvoltage. Applications ForDC-DCconversion.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SB1426

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●GeneralPurposeSwitchingandAmplification

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
2SB1426

TO-92Plastic-EncapsulateTransistors

FEATURES GeneralPurposeSwitchingandAmplification

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SB1426-TA

TO-92Plastic-EncapsulateTransistors

FEATURES GeneralPurposeSwitchingandAmplification

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SB1427

Powertransistor(??0V,??A)

Features 1)Lowsaturationvoltage,VCE:Max.−0.5VatIC/IB=−1A/−50mA. 2)ExcellentDCcurrentgaincharacteristics.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SB1427

PowerTransistor

■Features ●Lowsaturationvoltage, ●ExcellentDCcurrentgaincharacteristics.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SB1427

Powertransistor(-20V,-2A)

Features 1)Lowsaturationvoltage,VCE:Max.−0.5VatIC/IB=−1A/−50mA. 2)ExcellentDCcurrentgaincharacteristics.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SB1427T100E

Powertransistor(??0V,??A)

Features 1)Lowsaturationvoltage,VCE:Max.−0.5VatIC/IB=−1A/−50mA. 2)ExcellentDCcurrentgaincharacteristics.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SB1427W6

PNPLowVce(sat)Transistor

Voltage20VCurrent3A Features •SiliconPNPepitaxialtype •LowVce(sat)-0.2V(max)@Ic/Ib=-1.6A/-53mA •Highcollectorcurrentcapability •ExcellentDCcurrentgaincharacteristics •LeadfreeincompliancewithEURoHS2011/65/EU directive. •GreenmoldingcompoundasperIEC61249

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
2SB1429

SiliconPNPPowerTransistor

DESCRIPTION •HighCurrentCapability •HighPowerDissipation •Collector-EmitterBreakdownVoltage-:V(BR)CEo=-180V(Min) •ComplementtoType2SD2155 APPLICATIONS •Poweramplifierapplications •Recommendfor100Whighfidelityaudiofrequencyamplifieroutputstageapplications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2SB1429

PNPLowVce(sat)Transistor

Features SiliconPNPepitaxialtype LowVce(sat)-0.3V(max)@Ic/Ib=-3A/-0.3A Highcollectorcurrentcapability ExcellentDCcurrentgaincharacteristics LeadfreeincompliancewithEURoHS2011/65/EU directive GreenmoldingcompoundasperIEC61249Std. (HalogenFree)

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
2SB1429

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PLpackage •Complementtotype2SD2155 APPLICATIONS •Poweramplifierapplications •Recommendfor100Whighfidelityaudiofrequencyamplifieroutputstage

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC
2SB1429

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PLpackage •Complementtotype2SD2155 APPLICATIONS •Poweramplifierapplications •Recommendfor100Whighfidelityaudiofrequencyamplifieroutputstage

SAVANTIC

Savantic, Inc.

SAVANTIC
2SB1429

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PLpackage •Complementtotype2SD2155 APPLICATIONS •Poweramplifierapplications •Recommendfor100Whighfidelityaudiofrequencyamplifieroutputstage

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB1429

TRANSISTORSILICONPNPEPITAXIALTYPEPOWERAMPLIFIERAPPLICATION

TransistorSiliconPNPEpitaxialType(PCTProcess) PowerAmplifierApplications Features •Complementaryto2SD2155 •Recommendfor100WHighFidelityAudioFrequency-AmplifierOutputStage

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SB1429_R1_00001

PNPLowVce(sat)Transistor

Features SiliconPNPepitaxialtype LowVce(sat)-0.3V(max)@Ic/Ib=-3A/-0.3A Highcollectorcurrentcapability ExcellentDCcurrentgaincharacteristics LeadfreeincompliancewithEURoHS2011/65/EU directive GreenmoldingcompoundasperIEC61249Std. (HalogenFree)

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
2SB1429_R2_00001

PNPLowVce(sat)Transistor

Features SiliconPNPepitaxialtype LowVce(sat)-0.3V(max)@Ic/Ib=-3A/-0.3A Highcollectorcurrentcapability ExcellentDCcurrentgaincharacteristics LeadfreeincompliancewithEURoHS2011/65/EU directive GreenmoldingcompoundasperIEC61249Std. (HalogenFree)

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
2SB1420

SiliconPNPEpitaxialPlanarTransistor

文件：35.79 Kbytes Page：1 Pages

SankenSanken Electric Co Ltd.

三垦日本三垦

Sanken
2SB1420_07

SiliconPNPEpitaxialPlanarTransistor

文件：35.32 Kbytes Page：1 Pages

SankenSanken Electric Co Ltd.

三垦日本三垦

Sanken
2SB1424

LowVCE(sat)Transistor(−20V,−3A)

文件：91.27 Kbytes Page：4 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SB1424_1

LowVCE(sat)Transistor(−20V,−3A)

文件：91.27 Kbytes Page：4 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SB1424_15

PNPSiliconMediumPowerTransistor

文件：184.06 Kbytes Page：2 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SB1424_15

TRANSISTOR(PNP)

文件：109.45 Kbytes Page：1 Pages

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
2SB1424_15

PNPTransistors

文件：1.1975 Mbytes Page：2 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SB1424_15

TRANSISTOR

文件：182.59 Kbytes Page：3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1424G-X-AB3-R

TRANSISTOR

文件：182.59 Kbytes Page：3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1424-Q

PNPTransistors

文件：1.1975 Mbytes Page：2 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SB1424-R

PNPTransistors

文件：1.1975 Mbytes Page：2 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SB1424T100Q

封装/外壳：TO-243AA 包装：卷带（TR） 描述：TRANS PNP 20V 3A MPT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SB1424T100R

封装/外壳：TO-243AA 包装：卷带（TR） 描述：TRANS PNP 20V 3A MPT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SB1424T100R

LowVCE(sat)Transistor(??0V,??A)

文件：72.21 Kbytes Page：4 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

2SB142产品属性

  • 类型

    描述

  • 型号

    2SB142

  • 制造商

    Sanken Electric Co Ltd

  • 功能描述

    Box

  • 制造商

    Sanken Electric Co Ltd

  • 功能描述

    Bulk

  • 制造商

    Sanken Electric Co Ltd

  • 功能描述

    TRANS PNP DARL 120V 16A TO3P

2SB142供应商更多...

更新时间：2024-4-19 18:05:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳好佳好科技有限公司
2SB1424
ROHM
1436+
SOT89
30000
绝对原装进口现货可开增值税发票
询价
深圳市科恒伟业电子有限公司
2SB1420
SANKEN
1738+
TO-3P
8529
科恒伟业!只做原装正品,假一赔十!
询价
深圳市博浩通科技有限公司
2SB1424
ROHM
23+
SOT-89
31000
全新原装现货
询价
深圳兆威电子有限公司
2SB1420功率三极管
SANKEN
23+
TO-3P
90000
只做原厂渠道价格优势可提供技术支持
询价
深圳市富芯乐电子科技有限公司
2SB1423
ROHM
22+
TO-126
6300
询价
深圳市汇莱威科技有限公司
2SB1420
SANKEN
TO-247
608900
原包原标签100%进口原装常备现货!
询价
深圳市特顺芯科技有限公司
2SB1420
SANYO
08PB
90000
询价
深圳市佳鑫美电子科技有限公司
2SB1424
ROHM
22+
SOT89
2987
只售原装自家现货!诚信经营!欢迎来电
询价
瀚佳科技(深圳)有限公司
2SB1423
HGF
18+
TO-92
9862
全新原装现货/假一罚百!
询价
深圳市惊羽科技有限公司
2SB1420
SANKEN
24+25+/26+27+
TO-3P-3
9328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价

2SB142芯片相关品牌

  • ALSC
  • ATS2
  • BETLUX
  • delta
  • Diotec
  • ETAL
  • LUMBERG
  • Molex
  • MOLEX11
  • ONSEMI
  • WEIDMULLER
  • YFWDIODE

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