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2SB1386晶体管资料

  • 2SB1386别名：2SB1386三极管、2SB1386晶体管、2SB1386晶体三极管

  • 2SB1386生产厂家：TOY

  • 2SB1386制作材料：Si-PNP

  • 2SB1386性质：表面帖装型 （SMD）

  • 2SB1386封装形式：直插封装

  • 2SB1386极限工作电压：30V

  • 2SB1386最大电流允许值：5A

  • 2SB1386最大工作频率：120MHZ

  • 2SB1386引脚数：3

  • 2SB1386最大耗散功率：0.75W

  • 2SB1386放大倍数：

  • 2SB1386图片代号：H-100

  • 2SB1386vtest：30

  • 2SB1386htest：120000000

  • 2SB1386atest：5

  • 2SB1386wtest：.75

  • 2SB1386代换 2SB1386用什么型号代替：2SB1302,2SB1308,

2SB1386价格

参考价格：￥0.7403

型号：2SB1386T100Q 品牌：Rohm 备注：这里有2SB1386多少钱，2024年最近7天走势，今日出价，今日竞价，2SB1386批发/采购报价，2SB1386行情走势销售排行榜，2SB1386报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SB1386

LowFrequencyTransistor(-20V,-5A)

Features 1)LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2098/2SD2118/2SD2097/2SD2166.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SB1386

EpitaxialPlanarTransistorPNPSilicon

EpitaxialPlanarTransistor PNPSilicon

WEITRONWEITRON

威堂電子科技

WEITRON
2SB1386

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386

LowFrequencyTransistor

Features ●LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) ●ExcellentDCcurrentgain ●Epitaxialplanartype ●PNPsilicontransistor

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SB1386

PNPSiliconLowFrequencyTransistor

FEATURES ●LowVCE(sat) ●ExcellentDCcurrentgaincharacteristics ●Complementsthe2SD2098

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SB1386

TRANSISTOR(PNP)

FEATURES ●Lowcollectorsaturationvoltage, ●Execllentcurrent-to-gaincharacteristics

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI
2SB1386

SOT-89-3LPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●Lowcollectorsaturationvoltage ●Execllentcurrent-to-gaincharacteristics

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
2SB1386

Plastic-EncapsulateTransistors

FEATURES •Lowcollectorsaturationvoltage, •Execllentcurrent-to-gaincharacteristics

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH
2SB1386

SOT-89Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●Lowcollectorsaturationvoltage ●Execllentcurrent-to-gaincharacteristics ●Pb-Freepackageisavailable RoHSproductforpackingcodesuffixG HalogenfreeproductforpackingcodesuffixH

WILLASWILLAS electronics corp

威倫威倫电子股份有限公司

WILLAS
2SB1386

SiliconPNPtransistorinaSOT-89PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-89PlasticPackage. Features LowVCE(sat),excellentDCcurrentgain,complementsthe2SD2098. Applications Generalpoweramplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SB1386

Lowcollectorsaturationvoltage

FEATURES ●Lowcollectorsaturationvoltage ●Execllentcurrent-to-gaincharacteristics

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH
2SB1386

PNPTransistors

Features ●LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) ●ExcellentDCcurrentgain ●Epitaxialplanartype ●PNPsilicontransistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
2SB1386

PNPSiliconEpitaxialPlanarTransistor

FEATURES ●LowVCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A). ●ExcellentDCcurrentgaincharacteristics. ●Complementary:2SD2098. APPLICATIONS ●Lowfrequencytransistor.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
2SB1386

PNPSiliconEpitaxialPlanarTransistor

FEATURES LowVCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A). ExcellentDCcurrentgaincharacteristics. Complementary:2SD2098. APPLICATIONS Lowfrequencytransistor.

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SB1386

SOT-89-3LPlastic-EncapsulateTransistors

FEATURES Lowcollectorsaturationvoltage Execllentcurrent-to-gaincharacteristics

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SB1386

PNPSiliconLowFrequencyTransistor

文件：512.83 Kbytes Page：3 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SB1386

LOWFREQUENCYPNPTRANSISTOR

文件：178.8 Kbytes Page：5 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386

Lowfrequencytransistor(−20V,−5A)

文件：139.65 Kbytes Page：5 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SB1386_V01

SOT-89-3LPlastic-EncapsulateTransistors

FEATURES Lowcollectorsaturationvoltage Execllentcurrent-to-gaincharacteristics

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SB1386L-P-AB3-B-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386L-P-AB3-C-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386L-P-AB3-E-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386L-Q-AB3-B-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386L-Q-AB3-C-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386L-Q-AB3-E-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386L-R-AB3-B-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386L-R-AB3-C-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386L-R-AB3-E-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386L-X-AB3-F-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386-P

PNPTransistors

Features ●LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) ●ExcellentDCcurrentgain ●Epitaxialplanartype ●PNPsilicontransistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
2SB1386-P

PNPSiliconEpitaxialTransistors

Features •LowCollectorSaturationVoltage •Execllentcurrent-to-gaincharacteristics •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableupon

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SB1386-P-AB3-B-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386-P-AB3-C-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386-P-AB3-E-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386PPT

PNPEpitaxialTransistor

VOLTAGE20VoltsCURRENT5Amperes FEATURE *Smallflatpackage.(DPAK) *LowsaturationvoltageVCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A) *Highsaturationcurrentcapability. APPLICATION *PowerdriverandStrobeFlash.

CHENMKOCHENMKO

CHENMKO

CHENMKO
2SB1386PT

PNPEpitaxialTransistor

VOLTAGE20VoltsCURRENT5Amperes FEATURE *Smallflatpackage.(SC-62/SOT-89) *LowsaturationvoltageVCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A) *PC=2.0W(mountedonceramicsubstrate). *Highsaturationcurrentcapability. APPLICATION *PowerdriverandStrobeFlash

CHENMKOCHENMKO

CHENMKO

CHENMKO
2SB1386-Q

PNPSiliconEpitaxialTransistors

Features •LowCollectorSaturationVoltage •Execllentcurrent-to-gaincharacteristics •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableupon

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SB1386-Q

PNPTransistors

Features ●LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) ●ExcellentDCcurrentgain ●Epitaxialplanartype ●PNPsilicontransistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
2SB1386-Q-AB3-B-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386-Q-AB3-C-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386-Q-AB3-E-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386-R

PNPSiliconEpitaxialTransistors

Features •LowCollectorSaturationVoltage •Execllentcurrent-to-gaincharacteristics •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableupon

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SB1386-R

PNPTransistors

Features ●LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) ●ExcellentDCcurrentgain ●Epitaxialplanartype ●PNPsilicontransistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
2SB1386-R-AB3-B-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386-R-AB3-C-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386-R-AB3-E-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386T100Q

Lowfrequencytransistor(??0V,??A)

Features 1)LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2098/2SD2118/2SD2097/2SD2166.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SB1386T100R

Lowfrequencytransistor(??0V,??A)

Features 1)LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2098/2SD2118/2SD2097/2SD2166.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SB1386-X-AB3-F-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386_05

PNPEPITAXIALPLANARTRANSISTOR

文件：232.23 Kbytes Page：4 Pages

WEITRONWEITRON

威堂電子科技

WEITRON
2SB1386_1

Lowfrequencytransistor(−20V,−5A)

文件：139.65 Kbytes Page：5 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SB1386_10

LOWFREQUENCYPNPTRANSISTOR

文件：178.8 Kbytes Page：5 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386_10

PNPSiliconLowFrequencyTransistor

文件：512.83 Kbytes Page：3 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SB1386_15

PNPTransistors

文件：1.51198 Mbytes Page：3 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SB1386_15

LOWFREQUENCYPNPTRANSISTOR

文件：215.22 Kbytes Page：5 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386_15

PNPSiliconLowFrequencyTransistor

文件：512.83 Kbytes Page：3 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SB1386G-X-AB3-R

LOWFREQUENCYPNPTRANSISTOR

文件：215.22 Kbytes Page：5 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386G-X-AB3-R

LOWFREQUENCYPNPTRANSISTOR

文件：178.8 Kbytes Page：5 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386L-X-AB3-R

LOWFREQUENCYPNPTRANSISTOR

文件：178.8 Kbytes Page：5 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386-P

PNPSiliconEpitaxialTransistors

文件：430.6 Kbytes Page：4 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

2SB1386产品属性

  • 类型

    描述

  • 型号

    2SB1386

  • 制造商

    Panasonic Industrial Company

  • 功能描述

    TRANSISTOR

2SB1386供应商更多...

更新时间：2024-4-19 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市凌旭科技有限公司
2SB1386L-R-AB3-R
UTC
2016+
SOT89
29490
只做原装,假一罚十,公司可开17%增值税发票!
询价
中天科工半导体（深圳）有限公司
2SB1386
ROHM
20+
SOT89
43000
原装优势主营型号-可开原型号增税票
询价
深圳市科恒伟业电子有限公司
2SB1386T100R
ROHM/罗姆
22+
SOT89
9850
只做原装正品假一赔十!正规渠道订货!
询价
深圳市博浩通科技有限公司
2SB1386
ROHM
23+
SOT-89
46000
全新原装现货
询价
千层芯半导体(深圳)有限公司
2SB1386
ROHM
2018+
SMD
20000
一级代理原装现货假一罚十
询价
深圳市航润创能电子集团有限公司
2SB1386T100R
ROHM/罗姆
21+
SOT89
48600
只做原装,假一罚十
询价
深圳市航宇科工半导体有限公司
2SB1386T100R
ROHM/罗姆
06+
SOT-89
3000
原厂很远现货很近只做原装必须原装
询价
深圳市振宏微科技有限公司
2SB1386
SOT-89
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
深圳市华斯顿科技有限公司
2SB1386
ROHM
22+23+
SOT-89
14638
绝对原装正品全新进口深圳现货
询价
深圳市拓亿芯电子有限公司
2SB1386
ROHM/罗姆
23+
SOT-89
15000
全新原装现货,价格优势
询价

2SB1386芯片相关品牌

  • Altera
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  • Cree
  • ETC
  • HY
  • LUMILEDS
  • MOLEX2
  • OHMITE
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  • TOKEN
  • VBSEMI

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