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位置：首页 > IC中文资料第988页 > 2SB138

2SB138晶体管资料

  • 2SB138别名：2SB138三极管、2SB138晶体管、2SB138晶体三极管

  • 2SB138生产厂家：日本三菱公司

  • 2SB138制作材料：Ge-PNP

  • 2SB138性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L

  • 2SB138封装形式：直插封装

  • 2SB138极限工作电压：60V

  • 2SB138最大电流允许值：5A

  • 2SB138最大工作频率：<1MHZ或未知

  • 2SB138引脚数：2

  • 2SB138最大耗散功率：30W

  • 2SB138放大倍数：

  • 2SB138图片代号：E-44

  • 2SB138vtest：60

  • 2SB138htest：999900

  • 2SB138atest：5

  • 2SB138wtest：30

  • 2SB138代换 2SB138用什么型号代替：AD149,AD166,AD167,AL102,AL103,2N1539,2N1544,2SB231,3AD56A,

2SB138价格

参考价格：￥0.7403

型号：2SB1386T100Q 品牌：Rohm 备注：这里有2SB138多少钱，2024年最近7天走势，今日出价，今日竞价，2SB138批发/采购报价，2SB138行情走势销售排行榜，2SB138报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SB1381

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Fpackage •Complementtotype2SD2079 •Lowcollectorsaturationvoltage •HighDCcurrentgain APPLICATIONS •Highpowerswitchingapplications •Hammerdrive,pulsemotordriveapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SB1381

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Fpackage •Complementtotype2SD2079 •Lowcollectorsaturationvoltage •HighDCcurrentgain APPLICATIONS •Highpowerswitchingapplications •Hammerdrive,pulsemotordriveapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC
2SB1381

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Fpackage •Complementtotype2SD2079 •Lowcollectorsaturationvoltage •HighDCcurrentgain APPLICATIONS •Highpowerswitchingapplications •Hammerdrive,pulsemotordriveapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB1381

TRANSISTOR(HIGHPOWERSWITCHING,HAMMERDRIVE,PULSEMOTORDRIVEAPPLICATIONS)

High-PowerSwitchingApplications HammerDrive,PulseMotorDriveApplications •HighDCcurrentgain:hFE=1500(min)(VCE=−3V,IC=−2.5A) •Lowsaturationvoltage:VCE(sat)=−1.5V(max)(IC=−2.5A) •Complementaryto2SD2079.

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SB1382

SiliconPNPDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-120V(Min) •HighDCCurrentGain-:hFE=2000(Min.)@(IC=-8A,VCE=-4V) •LowCollectorSaturationVoltage-:VCE(sat)=-1.5V(Max)@(IC=-8A,IB=-16mA)B •ComplementtoType2SD2082 APPLICATIONS •Designedforchopperregula

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2SB1382

SiliconPNPDarlingtonPowerTransistors

DESCRIPTION •WithTO-3PMLpackage •Complementtotype2SD2082 APPLICATIONS •Forchopperregulator,DCmotordriverandgeneralpurposeapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SB1382

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-120V(Min) •HighDCCurrentGain-:hFE=2000(Min.)@(IC=-8A,VCE=-4V) •LowCollectorSaturationVoltage-:VCE(sat)=-1.5V(Max)@(IC=-8A,IB=-16mA)B •ComplementtoType2SD2082 APPLICATIONS •Designedforchopperregula

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB1382

SiliconPNPEpitaxialPlanarTransistor(ChopperRegulator,DCMotorDriverandGeneralPurpose)

SiliconPNPEpitaxialPlanarTransistor(Complementtotype2SD2082) Application:ChopperRegulator,DCMotorDriverandGeneralPurpose

SankenSanken Electric Co Ltd.

三垦日本三垦

Sanken
2SB1383

SiliconPNPEpitaxialPlanarTransistor(ChopperRegulator,DCMotorDriverandGeneralPurpose)

SiliconPNPEpitaxialPlanarTransistor(Complementtotype2SD2083) Application:ChopperRegulator,DCMotorDriverandGeneralPurpose

SankenSanken Electric Co Ltd.

三垦日本三垦

Sanken
2SB1383

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION •HighDCCurrentGain :hFE=2000(Min.)@IC=-12A,VCE=-4V •HighCollector-EmitterBreakdownVoltage- :V(BR)CEO=-120V(Min) •ComplementtoType2SD2083 APPLICATIONS •Designedfordriverofsolenoid,motorandgeneral purposeapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB1384

TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE

EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SB1386

Plastic-EncapsulateTransistors

FEATURES •Lowcollectorsaturationvoltage, •Execllentcurrent-to-gaincharacteristics

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH
2SB1386

SOT-89Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●Lowcollectorsaturationvoltage ●Execllentcurrent-to-gaincharacteristics ●Pb-Freepackageisavailable RoHSproductforpackingcodesuffixG HalogenfreeproductforpackingcodesuffixH

WILLASWILLAS electronics corp

威倫威倫电子股份有限公司

WILLAS
2SB1386

SiliconPNPtransistorinaSOT-89PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-89PlasticPackage. Features LowVCE(sat),excellentDCcurrentgain,complementsthe2SD2098. Applications Generalpoweramplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SB1386

Lowcollectorsaturationvoltage

FEATURES ●Lowcollectorsaturationvoltage ●Execllentcurrent-to-gaincharacteristics

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH
2SB1386

PNPSiliconEpitaxialPlanarTransistor

FEATURES ●LowVCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A). ●ExcellentDCcurrentgaincharacteristics. ●Complementary:2SD2098. APPLICATIONS ●Lowfrequencytransistor.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
2SB1386

PNPTransistors

Features ●LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) ●ExcellentDCcurrentgain ●Epitaxialplanartype ●PNPsilicontransistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
2SB1386

PNPSiliconEpitaxialPlanarTransistor

FEATURES LowVCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A). ExcellentDCcurrentgaincharacteristics. Complementary:2SD2098. APPLICATIONS Lowfrequencytransistor.

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SB1386

SOT-89-3LPlastic-EncapsulateTransistors

FEATURES Lowcollectorsaturationvoltage Execllentcurrent-to-gaincharacteristics

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SB1386

SOT-89-3LPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●Lowcollectorsaturationvoltage ●Execllentcurrent-to-gaincharacteristics

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
2SB1386

LowFrequencyTransistor

Features ●LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) ●ExcellentDCcurrentgain ●Epitaxialplanartype ●PNPsilicontransistor

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SB1386

TRANSISTOR(PNP)

FEATURES ●Lowcollectorsaturationvoltage, ●Execllentcurrent-to-gaincharacteristics

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI
2SB1386

EpitaxialPlanarTransistorPNPSilicon

EpitaxialPlanarTransistor PNPSilicon

WEITRONWEITRON

威堂電子科技

WEITRON
2SB1386

LowFrequencyTransistor(-20V,-5A)

Features 1)LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2098/2SD2118/2SD2097/2SD2166.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SB1386

PNPSiliconLowFrequencyTransistor

FEATURES ●LowVCE(sat) ●ExcellentDCcurrentgaincharacteristics ●Complementsthe2SD2098

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SB1386

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386_V01

SOT-89-3LPlastic-EncapsulateTransistors

FEATURES Lowcollectorsaturationvoltage Execllentcurrent-to-gaincharacteristics

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SB1386L-P-AB3-B-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386L-P-AB3-C-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386L-P-AB3-E-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386L-Q-AB3-B-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386L-Q-AB3-C-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386L-Q-AB3-E-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386L-R-AB3-B-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386L-R-AB3-C-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386L-R-AB3-E-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386L-X-AB3-F-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386-P

PNPSiliconEpitaxialTransistors

Features •LowCollectorSaturationVoltage •Execllentcurrent-to-gaincharacteristics •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableupon

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SB1386-P

PNPTransistors

Features ●LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) ●ExcellentDCcurrentgain ●Epitaxialplanartype ●PNPsilicontransistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
2SB1386-P-AB3-B-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386-P-AB3-C-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386-P-AB3-E-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386PPT

PNPEpitaxialTransistor

VOLTAGE20VoltsCURRENT5Amperes FEATURE *Smallflatpackage.(DPAK) *LowsaturationvoltageVCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A) *Highsaturationcurrentcapability. APPLICATION *PowerdriverandStrobeFlash.

CHENMKOCHENMKO

CHENMKO

CHENMKO
2SB1386PT

PNPEpitaxialTransistor

VOLTAGE20VoltsCURRENT5Amperes FEATURE *Smallflatpackage.(SC-62/SOT-89) *LowsaturationvoltageVCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A) *PC=2.0W(mountedonceramicsubstrate). *Highsaturationcurrentcapability. APPLICATION *PowerdriverandStrobeFlash

CHENMKOCHENMKO

CHENMKO

CHENMKO
2SB1386-Q

PNPSiliconEpitaxialTransistors

Features •LowCollectorSaturationVoltage •Execllentcurrent-to-gaincharacteristics •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableupon

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SB1386-Q

PNPTransistors

Features ●LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) ●ExcellentDCcurrentgain ●Epitaxialplanartype ●PNPsilicontransistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
2SB1386-Q-AB3-B-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386-Q-AB3-C-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386-Q-AB3-E-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386-R

PNPSiliconEpitaxialTransistors

Features •LowCollectorSaturationVoltage •Execllentcurrent-to-gaincharacteristics •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableupon

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SB1386-R

PNPTransistors

Features ●LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) ●ExcellentDCcurrentgain ●Epitaxialplanartype ●PNPsilicontransistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
2SB1386-R-AB3-B-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386-R-AB3-C-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386-R-AB3-E-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1386T100Q

Lowfrequencytransistor(??0V,??A)

Features 1)LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2098/2SD2118/2SD2097/2SD2166.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SB1386T100R

Lowfrequencytransistor(??0V,??A)

Features 1)LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2098/2SD2118/2SD2097/2SD2166.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SB1386-X-AB3-F-R

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1387

LOWFREQUENCYPOWERAMPLIFIERComplementarypairwith2SD1978

Application ·Lowfrequencypoweramplifier ·Complementarypairwith2SD1978

HitachiHitachi, Ltd.

日立公司

Hitachi
2SB1388

DriverApplications?

2SB1388:PNPEpitaxialPlanarSiliconTransistors 2SD2093:NPNTripleDiffusedPlanarSiliconTransistors Features •HighDCcurrentgain. •LargecurrentcapacityandlargeASO. •Lowsaturationvolatage. •Micalesspackagefacilitatingmounting. Applications •Motordrivers,printerha

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SB1389

SiliconPNPTripleDiffused

Application Lowfrequencypoweramplifier

HitachiHitachi, Ltd.

日立公司

Hitachi

2SB138产品属性

  • 类型

    描述

  • 型号

    2SB138

  • 制造商

    Toshiba

  • 功能描述

    PNP Cut Tape

2SB138供应商更多...

更新时间：2024-4-25 18:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市科芯源微电子有限公司
2SB1388
SAY
24+
TO3P
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
深圳市卓越微芯电子有限公司
2SB139040ML
SILAN
2020+
CDIP
4100
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
深圳市得捷芯城科技有限公司
2SB1390
HITACHI/日立
23+
NA/
3955
原装现货,当天可交货,原型号开票
询价
深圳市科恒伟业电子有限公司
2SB1389
HIT
1738+
TO-220F
8529
科恒伟业!只做原装正品,假一赔十!
询价
深圳兆威电子有限公司
2SB1390
HITACHI/日立
23+
TO-220F
90000
只做原厂渠道价格优势可提供技术支持
询价
中天科工半导体（深圳）有限公司
2SB1390
HITACHI/日立
20+
TO-220F
38900
原装优势主营型号-可开原型号增税票
询价
深圳廊盛科技有限公司
2SB1390
HITACHI/日立
2022
TO-220F
80000
原装现货,OEM渠道,欢迎咨询
询价
深圳市特顺芯科技有限公司
2SB1388
SANKEN
08PB
90000
询价
深圳市汇莱威科技有限公司
2SB1390
HITACHI/日立
TO-220F
265209
假一罚十原包原标签常备现货!
询价
瀚佳科技(深圳)有限公司
2SB139040ML
SILAN/士兰微
21+
65230
询价

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