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2SB134晶体管资料
2SB134别名:2SB134三极管、2SB134晶体管、2SB134晶体三极管
2SB134生产厂家:日本三菱公司
2SB134制作材料:Ge-PNP
2SB134性质:低频或音频放大 (LF)_低噪放大 (ra)
2SB134封装形式:直插封装
2SB134极限工作电压:30V
2SB134最大电流允许值:0.1A
2SB134最大工作频率:<1MHZ或未知
2SB134引脚数:3
2SB134最大耗散功率:0.1W
2SB134放大倍数:
2SB134图片代号:C-47
2SB134vtest:30
2SB134htest:999900
- 2SB134atest:.1
2SB134wtest:.1
2SB134代换 2SB134用什么型号代替:AC125,AC126,AC151R,AC191,ACY32,2SB173,3AX51B,
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
PowerTransistor(120V,-6A) MediumPowerTransistor+/-120V/+/-6A | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-120V(Min) •HighDCCurrentGain-:hFE=2000(Min)@(VCE=-3V,IC=-2A) •ComplementtoType2SD1889 APPLICATIONS •Designedforpoweramplifierapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
SiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-80V(Min) •HighDCCurrentGain-:hFE=1000(Min)@(VCE=-3V,IC=-2A) APPLICATIONS •Designedforpoweramplifierapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-80V(Min) •HighDCCurrentGain-:hFE=1000(Min)@(VCE=-3V,IC=-2A) APPLICATIONS •Designedforpoweramplifierapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Cpackage •HighDCcurrentgain •Lowsaturationvoltage •DARLINGTON APPLICATIONS •Forlowfrequencypoweramplifierandpowerdriverapplications | SAVANTIC Savantic, Inc. | |||
PowerTransistor(-80V,-4A) EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Fapackage ·HighDCcurrentgain ·Lowsaturationvoltage ·DARLINGTON APPLICATIONS ·Forlowfrequencypoweramplifierandpowerdriverapplications | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Fapackage ·HighDCcurrentgain ·Lowsaturationvoltage ·DARLINGTON APPLICATIONS ·Forlowfrequencypoweramplifierandpowerdriverapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Cpackage •HighDCcurrentgain •Lowsaturationvoltage •DARLINGTON APPLICATIONS •Forlowfrequencypoweramplifierandpowerdriverapplications | SAVANTIC Savantic, Inc. | |||
TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
SiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-100V(Min) •HighDCCurrentGain-:hFE=1000(Min)@(VCE=-3V,IC=-2A) APPLICATIONS •Designedforpoweramplifierapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-100V(Min) •HighDCCurrentGain-:hFE=1000(Min)@(VCE=-3V,IC=-2A) APPLICATIONS •Designedforpoweramplifierapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-100V(Min) •HighDCCurrentGain-:hFE=1000(Min)@(VGt=-3V,lc=-2A) •ComplementtoType2SD2025 APPLICATIONS •Designedforpoweramplifierapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
POWERTRANSISTOR(-100V,-8A) PowerTransistor(-100V,-8A) PowerTransistor(100V,8A) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Fapackage ·HighDCcurrentgain ·Lowsaturationvoltage ·DARLINGTON ·Complementtotype2SD2025 APPLICATIONS ·Forlowfrequencypoweramplifierand powerdriverapplications | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Fapackage ·HighDCcurrentgain ·Lowsaturationvoltage ·DARLINGTON ·Complementtotype2SD2025 APPLICATIONS ·Forlowfrequencypoweramplifierand powerdriverapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-247package •Complementtotype2SD2062 •Lowcollectorsaturationvoltage APPLICATIONS •Forpowerdrvierandgeneralpurposeapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-247package •Complementtotype2SD2062 •Lowcollectorsaturationvoltage APPLICATIONS •Forpowerdrvierandgeneralpurposeapplications | SAVANTIC Savantic, Inc. | |||
SiliconPNPtriplediffusionplanartype(Forhighpoweramplification) SiliconPNPtriplediffusionplanartype Forhighpoweramplification Complementaryto2SD2029 ■Features ●SatisfactoryfowardcurrenttransferratiohFEvs.collectorcurrentICcharacteristics ●Wideareaofsafeoperation(ASO) ●HightransitionfrequencyfT ●Optimumfo | PanasonicPanasonic Corporation 松下松下电器 | |||
iscSiliconPNPPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-160V(Min) ·WideAreaofSafeOperation ·ComplementtoType2SD2029 APPLICATIONS ·Poweramplifierapplications ·OptimumfortheoutputstageofaHiFiaudioamplifier | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-3PLpackage ·Complementtotype2SD2029 ·Wideareaofsafeoperation ·HightransitionfrequencyfT ·OptimumfortheoutputstageofaHi-Fiaudioamplifier APPLICATIONS ·Forhighpoweramplification | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors 文件:106.2 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors 文件:123.95 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPDarlingtonPowerTransistor 文件:124.33 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPPowerTransistors 文件:106.57 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors 文件:124.07 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors 文件:131.39 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
iscSiliconPNPPowerTransistor 文件:265.07 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistor 文件:134.11 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPPowerTransistor 文件:138.77 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPPowerTransistors 文件:182.07 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. |
2SB134产品属性
- 类型
描述
- 型号
2SB134
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY ROHM TRANSISTOR TO-220AB -480V -4A 40W BCE
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON/安森美 |
22+ |
TO-220F |
99477 |
||||
TOY |
23+ |
原厂原装 |
4000 |
全新原装 |
|||
ROHM |
1738+ |
TO-220F |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
ROHM |
21+ |
TO-220F |
3425 |
原装现货假一赔十 |
|||
N/A |
01+ |
TO220 |
880000 |
明嘉莱只做原装正品现货 |
|||
ROHM |
2017+ |
TO220 |
32568 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
|||
ROHM/Rohm Semiconductor/罗姆/ |
21+ |
TO-220F |
3425 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ROHM/罗姆 |
TO-220F |
265209 |
假一罚十原包原标签常备现货! |
||||
ON |
23+ |
TO-TO-220F |
37650 |
全新原装真实库存含13点增值税票! |
|||
TO-220FA |
10000 |
全新 |
2SB134规格书下载地址
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2SB1386-P:PNP硅外延晶体管的特点如下:·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息)·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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