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2SB119晶体管资料

  • 2SB119别名：2SB119三极管、2SB119晶体管、2SB119晶体三极管

  • 2SB119生产厂家：日本松下公司

  • 2SB119制作材料：Ge-PNP

  • 2SB119性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L

  • 2SB119封装形式：直插封装

  • 2SB119极限工作电压：32V

  • 2SB119最大电流允许值：1.5A

  • 2SB119最大工作频率：<1MHZ或未知

  • 2SB119引脚数：2

  • 2SB119最大耗散功率：50W

  • 2SB119放大倍数：

  • 2SB119图片代号：E-44

  • 2SB119vtest：32

  • 2SB119htest：999900

  • 2SB119atest：1.5

  • 2SB119wtest：50

  • 2SB119代换 2SB119用什么型号代替：AD149,AD166,2N2137,2N2142,2SB449,3AD56A,

2SB119价格

参考价格：￥0.2459

型号：2SB1197KT146Q 品牌：Rohm 备注：这里有2SB119多少钱，2024年最近7天走势，今日出价，今日竞价，2SB119批发/采购报价，2SB119行情走势销售排行榜，2SB119报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SB1190

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220package •HighVCEO •LargePC •Complementtotype2SD1772 APPLICATIONS •Poweramplifier •TVverticaldeflectionoutput

SAVANTIC

Savantic, Inc.

SAVANTIC
2SB1190

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220package •HighVCEO •LargePC •Complementtotype2SD1772 APPLICATIONS •Poweramplifier •TVverticaldeflectionoutput

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC
2SB1190

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220package •HighVCEO •LargePC •Complementtotype2SD1772 APPLICATIONS •Poweramplifier •TVverticaldeflectionoutput

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB1190

SiliconPNPPowerTransistor

DESCRIPTION •HighPowerDissipation •HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=-150V(Min.) •ComplementtoType2SD1770 APPLICATIONS •Poweramplifierapplications. •TVverticaldeflectionoutputapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2SB1192

SiliconPNPPowerTransistor

DESCRIPTION •HighPowerDissipation •HighCollector-EmitterBreakdownVoltage-:V(BR)cEo=-150V(Min.) •ComplementtoType2SD1772 APPLICATIONS •Poweramplifierapplications. •TVverticaldeflectionoutputapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2SB1192

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Fapackage •HighVCEO •LargePC •Complementtotype2SD1770 APPLICATIONS •Poweramplifier •TVverticaldeflectionoutput

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB1192

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Fapackage •HighVCEO •LargePC •Complementtotype2SD1770 APPLICATIONS •Poweramplifier •TVverticaldeflectionoutput

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC
2SB1192

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Fapackage •HighVCEO •LargePC •Complementtotype2SD1770 APPLICATIONS •Poweramplifier •TVverticaldeflectionoutput

SAVANTIC

Savantic, Inc.

SAVANTIC
2SB1193

ForMidium-SpeedPowerSwitching

SiliconPNPepitaxialplanartypedarlington Formidium-speedpowerswitching Complementaryto2SD1773 ■Features •HighforwardcurrenttransferratiohFE •High-speedswitching •Full-packpackagewhichcanbeinstalledtotheheatsinkwithonescrew

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SB1193

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Fapackage •HighDCcurrentgain •Highspeedswitching •DARLINGTON •Complementtotype2SD1773 APPLICATIONS •Formediumspeedswitchingapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC
2SB1193

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Fapackage •HighDCcurrentgain •Highspeedswitching •DARLINGTON •Complementtotype2SD1773 APPLICATIONS •Formediumspeedswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SB1193

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Fapackage •HighDCcurrentgain •Highspeedswitching •DARLINGTON •Complementtotype2SD1773 APPLICATIONS •Formediumspeedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB1194

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Fapackage •HighDCcurrentgain •Highspeedswitching •DARLINGTON •Complementtotype2SD1633 APPLICATIONS •Forpowerswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB1194

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Fapackage •HighDCcurrentgain •Highspeedswitching •DARLINGTON •Complementtotype2SD1633 APPLICATIONS •Forpowerswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SB1194

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Fapackage •HighDCcurrentgain •Highspeedswitching •DARLINGTON •Complementtotype2SD1633 APPLICATIONS •Forpowerswitchingapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC
2SB1194

SiliconPNPDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEo(susr-100V(Min) •HighDCCurrentGain-:hFE1500(Min)@(VCE=-3V,lc=-3A) •ComplementtoType2SD1633 APPLICATIONS •Designedforpoweramplifierapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2SB1197

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES •LowVCE(sat).VCE(sat)

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
2SB1197

SiliconEpitaxialPlanarTransistor

FEATURES ●Smallsurfacemountingtype. ●Corredtorpeakcurrent(Max.=1000mA). ●Suitableforhighpackingdensity. ●Lowvoltage(Max.=40v). ●Highsaturationcurrentcapability. ●Voltagecontrolledsmallsignalswitch. APPLICATIONS ●Telephoneandprofessionalcommunicationequipment. ●

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
2SB1197

TRANSISTOR(PNP)

FEATURES •LowVCE(sat).VCE(sat)

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI
2SB1197

PNPSiliconEpitaxialTransistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •SmallPackage •Mounting:anyposition •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableuponrequestbyaddingsuffix-HF

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SB1197

PNPEpitaxialPlanarTransistor

FEATURES •LowVCE(sat).VCE(sat)≦-0.5V(IC/IB=-0.5A/-50mA) •IC=-0.8A •Complementsofthe2SD1781

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SB1197A

PNPLowVce(sat)Transistor

Features SiliconPNPepitaxialtype LowVce(sat)-0.5V(max)@Ic/Ib=-2A/-200mA Highcollectorcurrentcapability ExcellentDCcurrentgaincharacteristics LeadfreeincompliancewithEURoHS2011/65/EUdirective. GreenmoldingcompoundasperIEC61249Std. (HalogenFree)

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
2SB1197A_R1_00001

PNPLowVce(sat)Transistor

Features SiliconPNPepitaxialtype LowVce(sat)-0.5V(max)@Ic/Ib=-2A/-200mA Highcollectorcurrentcapability ExcellentDCcurrentgaincharacteristics LeadfreeincompliancewithEURoHS2011/65/EUdirective. GreenmoldingcompoundasperIEC61249Std. (HalogenFree)

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
2SB1197A_R2_00001

PNPLowVce(sat)Transistor

Features SiliconPNPepitaxialtype LowVce(sat)-0.5V(max)@Ic/Ib=-2A/-200mA Highcollectorcurrentcapability ExcellentDCcurrentgaincharacteristics LeadfreeincompliancewithEURoHS2011/65/EUdirective. GreenmoldingcompoundasperIEC61249Std. (HalogenFree)

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
2SB1197K

LowFrequencyTransistor

Features ●LowVCE(sat).VCE(sat)≤-0.5V(IC/IB=-0.5A/-50mA). ●IC=-0.8A. ●PNPsilicontransistor

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY
2SB1197K

LowFrequencyTransistor

FEATURES •LowVCE(sat).VCE(sat)≦-0.5V(IC/IB=-0.5A/-50mA) •IC=-0.8A

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SB1197K

LowFrequencyTransistor

Features ●LowVCE(sat).VCE(sat)≤-0.5V(IC/IB=-0.5A/-50mA). ●IC=-0.8A. ●PNPsilicontransistor

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SB1197K

Plastic-EncapsulatedTransistors

TRANSISTOR(PNP) FEATURES PowerdissipationPCM:200mW(Tamb=25℃) CollectorcurrentICM:-800mA Collector-basevoltageV(BR)CBO:-40V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL
2SB1197K

PNPGeneralPurposeTransistors

PNPGeneralPurposeTransistors P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON
2SB1197K

LowFrequencyTransistor(-32V,-0.8A)

Features 1)LowVCE(sat).VCE(sat)≤0.5V(IC/IB=-0.5A/-50mAͅ) 2)IC=-0.8A. 3)Complementsthe2SD1781K.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SB1197K

SiliconPNPtransistorinaSOT-23PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features LowVCE(sat),complementsthe2SD1781K. Applications Lowfrequencyamplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SB1197K

TRANSISTOR(PNP)

FEATURES PowerdissipationPCM:200mW(Tamb=25℃) CollectorcurrentICM:-800mA Collector-basevoltageV(BR)CBO:-40V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
2SB1197KPT

PNPSwitchingTransistor

VOLTAGE32VoltsCURRENT0.8Ampere FEATURE *Smallsurfacemountingtype.(SOT-23) *Correctorpeakcurrent(Max.=1000mA). *Suitableforhighpackingdensity. *Lowvoltage(Max.=40V). *Highsaturationcurrentcapability. *Voltagecontrolledsmallsignalswitch. APPLICATION *Telepho

CHENMKOCHENMKO

CHENMKO

CHENMKO
2SB1197KQ

LowFrequencyTransistor

Features ●LowVCE(sat).VCE(sat)≤-0.5V(IC/IB=-0.5A/-50mA). ●IC=-0.8A. ●PNPsilicontransistor

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY
2SB1197KR

LowFrequencyTransistor

Features ●LowVCE(sat).VCE(sat)≤-0.5V(IC/IB=-0.5A/-50mA). ●IC=-0.8A. ●PNPsilicontransistor

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY
2SB1197KXLT1

LowFrequencyTransistor

PNPSilicon FEATURE ●Highcurrentcapacityincompactpackage.IC=í0.8A. ●Epitaxialplanartype. ●NPNcomplement:2SD1781K ●WedeclarethatthematerialofproductcompliancewithRoHSrequirements. Pb-Freepackageisavailable RoHSproductforpackingcodesuffixG Halog

WILLASWILLAS electronics corp

威倫威倫电子股份有限公司

WILLAS
2SB1197-P

PNPSiliconEpitaxialTransistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •SmallPackage •Mounting:anyposition •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableuponrequestbyaddingsuffix-HF

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SB1197-Q

PNPSiliconEpitaxialTransistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •SmallPackage •Mounting:anyposition •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableuponrequestbyaddingsuffix-HF

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SB1197-R

PNPSiliconEpitaxialTransistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •SmallPackage •Mounting:anyposition •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableuponrequestbyaddingsuffix-HF

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SB1198

LOWFREQUENCYPNPTRANSISTOR

DESCRIPTION TheUTC2SB1198isanepitaxialplanartypePNPsilicontransistor. FEATURES *Highbreakdownvoltage:BVCEO=-80V *LowVCE(sat):VCE(sat)=-0.2V(Typ)(Ic/IB=-0.5A/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1198

Low-frequencyTransistor(-80V,-0.5A)

Features 1)LowVCE(sat).VCE(sat)=0.2V(Typ.)(IC/IB=0.5A/50mA) 2)Highbreakdownvoltage.BVCEO=80V 3)Complementsthe2SD1782K.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SB1198

SOT-23Plastic-EncapsulateTransistors

FEATURES LowVCE(sat) Highbreakdownvoltage

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SB1198

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●LowVCE(sat) ●Highbreakdownvoltage

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
2SB1198K

Low-frequencyTransistor(-80V,-0.5A)

Features 1)LowVCE(sat).VCE(sat)=0.2V(Typ.)(IC/IB=0.5A/50mA) 2)Highbreakdownvoltage.BVCEO=80V 3)Complementsthe2SD1782K.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SB1198K

PNPSiliconGeneralPurposeTransistor

FEATURES PowerdissipationPCM:0.2W CollectorcurrentICM:-0.5A Collector-basevoltageV(BR)CBO:-80V OperatingandstoragejunctiontemperaturerangeTJTstg:-55°Cto+150°C

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SB1198K

SiliconPNPtransistorinaSOT-23PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features Highbreakdown,lowVCE(sat),complementsthe2SD1782K. Applications Mediumpoweramplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SB1198KFRA

PowerTransistor(-80V,-500mA)

Features 1)LowVCE(sat) VCE(sat)=-200mV(Typ.) (IC/IB=-500mA/-50mA) 2)Highbreakdownvoltage. BVCEO=-80V 3)Complementsthe2SD1782KFRA. Application DRIVER

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SB1190

SiliconPNPPowerTransistors

文件：96.07 Kbytes Page：3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC
2SB1190_15

SiliconPNPPowerTransistors

文件：164.72 Kbytes Page：3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC
2SB1190_2014

SiliconPNPPowerTransistors

文件：164.72 Kbytes Page：3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC
2SB1192

SiliconPNPPowerTransistors

文件：117.06 Kbytes Page：3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC
2SB1192_15

SiliconPNPPowerTransistors

文件：169.75 Kbytes Page：3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC
2SB1192_2014

SiliconPNPPowerTransistors

文件：169.75 Kbytes Page：3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC
2SB1193

SiliconPNPPowerTransistors

文件：131.54 Kbytes Page：3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC
2SB1193_15

SiliconPNPPowerTransistors

文件：151.86 Kbytes Page：3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC
2SB1193_2014

SiliconPNPPowerTransistors

文件：151.86 Kbytes Page：3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC
2SB1194

SiliconPNPPowerTransistors

文件：135.64 Kbytes Page：3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC
2SB1194_15

SiliconPNPPowerTransistors

文件：162.25 Kbytes Page：3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC
2SB1194_2014

SiliconPNPPowerTransistors

文件：162.25 Kbytes Page：3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC
2SB1197

SiliconEpitaxialPlanarTransistor

文件：419.5 Kbytes Page：4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

2SB119产品属性

  • 类型

    描述

  • 型号

    2SB119

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR TO-220AB -200V -1A 25W BCE

2SB119供应商更多...

更新时间：2024-4-25 16:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市科思奇电子科技有限公司
2SB1198KT146R
ROHM/罗姆
19+
SOT-23
9000
只做原装只有原装假一罚百可开增值税票
询价
深圳硅原半导体有限公司
2SB1198KT146R
ROHM/罗姆
SOT23-3
28533
原盒原标,正品现货 诚信经营 价格美丽 假一罚十!
询价
深圳市拓亿芯电子有限公司
2SB1198KT146R
ROHM
23+
SOT-23
30000
代理全新原装现货,价格优势
询价
深圳市正迈科技有限公司
2SB1198KFRAT146R
ROHM
23+
NA
81000
专业电子元器件供应链正迈科技特价代理QQ1304306553
询价
深圳市湘达电子科技有限公司
2SB1198KT146R
ROHM/罗姆
2022+
SMT3(SC-59)(SOT-346)
8000
只做原装支持实单,有单必成。
询价
深圳市宏捷佳电子科技有限公司
2SB1198K
ROHM
2023+
SOT23
50000
原装现货
询价
深圳市亿联芯电子科技有限公司
2SB1198KT146R
ROHM/罗姆
2023+
SOT23
19700
十五年行业诚信经营,专注全新正品
询价
深圳市力拓辉电子有限公司
2SB1198KT146R
ROHM
21+
100
全新原装鄙视假货15118075546
询价
深圳市星佑电子有限公司
2SB1198KR
05+
原厂原装
3051
只做全新原装真实现货供应
询价
深圳市汇莱威科技有限公司
2SB1198KFRA
ROHM/罗姆
SOT23
7906200
询价

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  • TRACOPOWER

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