2SB115晶体管资料

  • 2SB115别名:2SB115三极管、2SB115晶体管、2SB115晶体三极管

  • 2SB115生产厂家:日本日电公司

  • 2SB115制作材料:Ge-PNP

  • 2SB115性质:低频或音频放大 (LF)

  • 2SB115封装形式:直插封装

  • 2SB115极限工作电压:25V

  • 2SB115最大电流允许值:0.05A

  • 2SB115最大工作频率:<1MHZ或未知

  • 2SB115引脚数:3

  • 2SB115最大耗散功率:0.1W

  • 2SB115放大倍数:β>60

  • 2SB115图片代号:C-47

  • 2SB115vtest:25

  • 2SB115htest:999900

  • 2SB115atest:.05

  • 2SB115wtest:.1

  • 2SB115代换 2SB115用什么型号代替:AC125,AC126,AC151,2SB54,2SB56,

型号 功能描述 生产厂家&企业 LOGO 操作

PNPSILICONDARLINGTONTRANSISTOR

DESCRIPTION The2SB1150isadarlingtontransistorbuilt-inazenerdiodeatB-CandadumperdiodeatE-C. ItissuitableforusetooperatefromICwithoutpredriver,suchashammerdriver.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

LowCollectorSaturationVoltage

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT

LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT FEATURES *HighPowerDissipation:PD=1.5W(Ta=25℃) *Complementaryto2SD1691.

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-126package ·Complementtotype2SD1691 ·Lowsaturationvoltage ·Largecurrent ·Hightotalpowerdissipation:PT=1.3W ·LargecurrentcapabilityandwideSOA APPLICATIONS ·DC-DCconverter ·Driverofsolenoidormotor

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-126package ·Complementtotype2SD1691 ·Lowsaturationvoltage ·Largecurrent ·Hightotalpowerdissipation:PT=1.3W ·LargecurrentcapabilityandwideSOA APPLICATIONS ·DC-DCconverter ·Driverofsolenoidormotor

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

Itisintentedforuseinpoweramplifierandswitchingapplications.

DESCRIPTION Itisintentedforuseinpoweramplifierandswitchingapplications.

TGS

Tiger Electronic Co.,Ltd

TGS

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-126package ·Complementtotype2SD1691 ·Lowsaturationvoltage ·Largecurrent ·Hightotalpowerdissipation:PT=1.3W ·LargecurrentcapabilityandwideSOA APPLICATIONS ·DC-DCconverter ·Driverofsolenoidormotor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT

LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT FEATURES *HighPowerDissipation:PD=1.5W(Ta=25℃) *Complementaryto2SD1691.

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT

LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT FEATURES *HighPowerDissipation:PD=1.5W(Ta=25℃) *Complementaryto2SD1691.

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-3PFapackage ·Complementtotype2SD1705 ·Lowcollectorsaturationvoltage ·SatisfactorylinearityofhFE APPLICATIONS ·Forpowerswitchingapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconPNPepitaxialplanartype(Forpowerswitching)

Forpowerswitching Complementaryto2SD1705 ■Features ●LowcollectortoemittersaturationvoltageVCE(sat) ●SatisfactorylinearityoffowardcurrenttransferratiohFE ●LargecollectorcurrentIC ●Full-packpackagewhichcanbeinstalledtotheheatsinkwithonescre

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-3PFapackage ·Complementtotype2SD1705 ·Lowcollectorsaturationvoltage ·SatisfactorylinearityofhFE APPLICATIONS ·Forpowerswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-3PFapackage ·Complementtotype2SD1705 ·Lowcollectorsaturationvoltage ·SatisfactorylinearityofhFE APPLICATIONS ·Forpowerswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Complementtotype2SD1706 •Lowcollectorsaturationvoltage •SatisfactorylinearityofhFE APPLICATIONS •Forpowerswitchingapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Complementtotype2SD1706 •Lowcollectorsaturationvoltage •SatisfactorylinearityofhFE APPLICATIONS •Forpowerswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Complementtotype2SD1706 •Lowcollectorsaturationvoltage •SatisfactorylinearityofhFE APPLICATIONS •Forpowerswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SILICONNPNEPITAXIALPLANARTYPEPOWERSWITCHING

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconPNPepitaxialplanartype(Forpowerswitching)

SiliconPNPepitaxialplanartype Forpowerswitching Complementaryto2SD1706 ■Features ●LowcollectortoemittersaturationvoltageVCE(sat) ●SatisfactorylinearityoffowardcurrenttransferratiohFE ●LargecollectorcurrentIC ●Full-packpackagewhichcanbeinstalledtotheheat

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconPNPPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-80V(Min) •GoodLinearityofhFE •LowCollectorSaturationVoltage-:VCE(sat)=-0.5V(Max.)@IC=-7A •ComplementtoType2SD1706 APPLICATIONS •Designedforpowerswitchingapplications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconPNPepitaxialplanartype(Forpowerswitching)

Forpowerswitching Complementaryto2SD1707 ■Features ●LowcollectortoemittersaturationvoltageVCE(sat) ●SatisfactorylinearityoffowardcurrenttransferratiohFE ●LargecollectorcurrentIC ●Full-packpackagewhichcanbeinstalledtotheheatsinkwithonescrew

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-3PFapackage ·Complementtotype2SD1707 ·Lowcollectorsaturationvoltage ·Largecollectorcurrent APPLICATIONS ·Forpowerswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-3PFapackage ·Complementtotype2SD1707 ·Lowcollectorsaturationvoltage ·Largecollectorcurrent APPLICATIONS ·Forpowerswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-3PFapackage ·Complementtotype2SD1707 ·Lowcollectorsaturationvoltage ·Largecollectorcurrent APPLICATIONS ·Forpowerswitchingapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Complementtotype2SD1712 •HighfT •Wideareaofsafeoperation APPLICATIONS •Forhighpoweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Complementtotype2SD1712 •HighfT •Wideareaofsafeoperation APPLICATIONS •Forhighpoweramplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Complementtotype2SD1712 •HighfT •Wideareaofsafeoperation APPLICATIONS •Forhighpoweramplifierapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEo=-100V(Min) •GoodLinearityofhFE •WideAreaofSafeOperation •ComplementtoType2SD1712 APPLICATIONS •Designedforhighpoweramplifierapplications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconPNPPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-120V(Min) •GoodLinearityofhFE •WideAreaofSafeOperation •ComplementtoType2SD1713 APPLICATIONS •Designedforhighpoweramplifierapplications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Complementtotype2SD1713 •HighfT •Wideareaofsafeoperation APPLICATIONS •Forhighpoweramplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Complementtotype2SD1713 •HighfT •Wideareaofsafeoperation APPLICATIONS •Forhighpoweramplifierapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Complementtotype2SD1713 •HighfT •Wideareaofsafeoperation APPLICATIONS •Forhighpoweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Complementtotype2SD1714 •HighfT •Wideareaofsafeoperation APPLICATIONS •Forhighpoweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Complementtotype2SD1714 •HighfT •Wideareaofsafeoperation APPLICATIONS •Forhighpoweramplifierapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Complementtotype2SD1714 •HighfT •Wideareaofsafeoperation APPLICATIONS •Forhighpoweramplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistor

文件:135.89 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconPNPPowerTransistors

文件:176 Kbytes Page:4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

PNPPlasticEncapsulatedTransistor

文件:304.07 Kbytes Page:2 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT

文件:229.2 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT

文件:229.2 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

SiliconPNPPowerTransistors

文件:224.59 Kbytes Page:4 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

文件:224.59 Kbytes Page:4 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

PNPPlastic-EncapsulateTransistors

文件:305.43 Kbytes Page:2 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT

文件:229.2 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT

文件:229.2 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT

文件:229.2 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT

文件:229.2 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT

文件:229.2 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT

文件:229.2 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

PNPPlastic-EncapsulateTransistors

文件:305.43 Kbytes Page:2 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

封装/外壳:TO-225AA,TO-126-3 包装:卷带(TR) 描述:TRANS PNP 60V 5A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

PNPPlasticEncapsulatedTransistor

文件:304.07 Kbytes Page:2 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

PNPPlastic-EncapsulateTransistors

文件:305.43 Kbytes Page:2 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

封装/外壳:TO-225AA,TO-126-3 包装:卷带(TR) 描述:TRANS PNP 60V 5A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

PNPPlasticEncapsulatedTransistor

文件:304.07 Kbytes Page:2 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

iscSiliconPNPPowerTransistor

文件:155.98 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscSiliconPNPPowerTransistor

文件:154.76 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistor

文件:126.33 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconPNPPowerTransistors

文件:153.5 Kbytes Page:4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistor

文件:133.4 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconPNPPowerTransistors

文件:212.27 Kbytes Page:4 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

2SB115产品属性

  • 类型

    描述

  • 型号

    2SB115

  • 制造商

    NEC

  • 制造商全称

    NEC

  • 功能描述

    PNP SILICON DARLINGTON TRANSISTOR

更新时间:2024-3-28 17:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PANASONI
23+
TO-3P
2541
特价库存
MAT
21+
TO-3PF
50
优势代理渠道,原装正品,可全系列订货开增值税票
松下
22+
TO-3P
7992
原装现货
MAT
2022
TO-3P
80000
原装现货,OEM渠道,欢迎咨询
80
全新原装 货期两周
TOP-3FA
10000
全新
PANASONIC
22+
TO-3P
28950
原装现货.优势热卖.终端BOM表可配单
PANASONIC/松下
22+
TO-3PF
25000
只做原装进口现货,专注配单
PANASONIC
24+
TO-3PF
37650
独立分销商,公司只做原装,诚心经营,免费试样正品保证
PANASONIC/松下
2021+
TO-3PF
55628
原厂授权代理,海外优势订货渠道。可提供大量库存,详

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  • TTELEC
  • XFMRS

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    2SA2198,全新原装当天发货或门市自取0755-82732291.

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  • 2SB1386-P-PNP硅外延晶体管

    2SB1386-P:PNP硅外延晶体管的特点如下:·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息)·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号

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