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2SB113晶体管资料

  • 2SB113别名：2SB113三极管、2SB113晶体管、2SB113晶体三极管

  • 2SB113生产厂家：日本日电公司

  • 2SB113制作材料：Ge-PNP

  • 2SB113性质：低频或音频放大 （LF）

  • 2SB113封装形式：直插封装

  • 2SB113极限工作电压：25V

  • 2SB113最大电流允许值：0.05A

  • 2SB113最大工作频率：<1MHZ或未知

  • 2SB113引脚数：3

  • 2SB113最大耗散功率：0.1W

  • 2SB113放大倍数：β>61

  • 2SB113图片代号：C-47

  • 2SB113vtest：25

  • 2SB113htest：999900

  • 2SB113atest：.05

  • 2SB113wtest：.1

  • 2SB113代换 2SB113用什么型号代替：AC125,AC126,AC151,2SB54,2SB56,

2SB113价格

参考价格：￥0.7349

型号：2SB1132T100P 品牌：ROHM 备注：这里有2SB113多少钱，2024年最近7天走势，今日出价，今日竞价，2SB113批发/采购报价，2SB113行情走势销售排行榜，2SB113报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SB1130AM

EpitaxialPlanarPNPSiliconTransistor

Features 1)Highbreakdwonvoltage:BVCEO=-160V. 2)Hightransitionfrequency. 3)Smalloutputcapacitance. 4)Complementarypairwith2SD1665AM.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SB1131

Strobe,High-CurrentSwitchingApplications

Applications 1.Strobes,powersupplies,relaydrivers,lampdrivers. Features 1.AdoptionofFBET,MBITprocesses. 2.Lowsaturationvoltage. 3.Largecurrentcapacity. 4.Fastswitchingtime.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SB1132

MediumPowerTransistor

MediumPowerTransistor(-32V,-1A) Features 1)LowVCE(sat). VCE(sat)=-0.2V(Typ.) (IC/IB=-500mA/-50mA) 2)Compliments2SD1664/2SD1858 Structure Epitaxialplanartype PNPsilicontransistor

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SB1132

PNPPlastic-EncapsulateTransistors

PNPPlastic-EncapsulateTransistors P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON
2SB1132

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1132

Plastic-EncapsulatedTransistors

TRANSISTOR(PNP) FEATURES PowerdissipationPCM:0.5W(Tamb=25℃) CollectorcurrentICM:-1A Collector-basevoltageV(BR)CBO:-40V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL
2SB1132

MediumPowerTransistor

Features ●LowVCE(sat) ●Complimentsto2SD1664

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SB1132

PNPSiliconMediumPowerTransistor

FEATURES •Lowpowerdissipation0.5W

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SB1132

TRANSISTOR(PNP)

FEATURES •LowVCE(sat):-0.2V(Typ)IC/IB=-500mA/-50mA •Compliments2SD1664

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI
2SB1132

MediumPowerTransistor(-32V,??1A)

MediumPowerTransistor(-32V,-1A) Features 1)LowVCE(sat). VCE(sat)=-0.2V(Typ.) (IC/IB=-500mA/-50mA) 2)Compliments2SD1664/2SD1858 Structure Epitaxialplanartype PNPsilicontransistor

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SB1132

TRANSISTOR(PNP)

FEATURES PowerdissipationPCM:0.5W(Tamb=25℃) CollectorcurrentICM:-1A Collector-basevoltageV(BR)CBO:-40V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
2SB1132

SOT-89Plastic-EncapsulateTransistors

SOT-89Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES •LowVCE(sat) •Pb-Freepackageisavailable RoHSproductforpackingcodesuffixG HalogenfreeproductforpackingcodesuffixH

WILLASWILLAS electronics corp

威倫威倫电子股份有限公司

WILLAS
2SB1132

PNPGeneralPurposeAmplifier

FEATURES LowVCE(SAT)=-0.2V(Typ.) (IC/IB=-500mA/-50mA). ComplementaryNPNtypeavailable 2SD1664. APPLICATIONS Thisdeviceisdesignedasageneralpurposeamplifier andswitching.

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SB1132L-P-AB3-R

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1132L-P-AB3-T

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1132L-P-TN3-R

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1132L-P-TN3-T

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1132L-Q-AB3-R

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1132L-Q-AB3-T

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1132L-Q-TN3-R

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1132L-Q-TN3-T

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1132L-R-AB3-R

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1132L-R-AB3-T

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1132L-R-TN3-R

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1132L-R-TN3-T

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1132L-X-AB3-R

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1132L-X-TN3-R

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1132L-X-TN3-T

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1132-P

PNPPlastic-EncapsulateTransistors

PNPPlastic-EncapsulateTransistors Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •Powerdissipation:PCM=0.5W(Tamb=25) •Collectorcurrent:ICM=-1A •Collector-basevoltage:V(BR)CBO=-40V •Operatingandst

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SB1132-P-AB3-R

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1132-P-AB3-T

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1132PT

PNPMediumPowerTransistor

SURFACEMOUNTPNPMediumPowerTransistor VOLTAGE32VoltsCURRENT1Ampere FEATURE *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *Smallflatpackage.(SC-62/SOT-89) APPLICATION *Telephonyandprof

CHENMKOCHENMKO

CHENMKO

CHENMKO
2SB1132-P-TN3-R

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1132-P-TN3-T

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1132-Q

PNPPlastic-EncapsulateTransistors

PNPPlastic-EncapsulateTransistors Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •Powerdissipation:PCM=0.5W(Tamb=25) •Collectorcurrent:ICM=-1A •Collector-basevoltage:V(BR)CBO=-40V •Operatingandst

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SB1132-Q-AB3-R

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1132-Q-AB3-T

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1132-Q-TN3-R

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1132-Q-TN3-T

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1132-R

PNPPlastic-EncapsulateTransistors

PNPPlastic-EncapsulateTransistors Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •Powerdissipation:PCM=0.5W(Tamb=25) •Collectorcurrent:ICM=-1A •Collector-basevoltage:V(BR)CBO=-40V •Operatingandst

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SB1132-R-AB3-R

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1132-R-AB3-T

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1132-R-TN3-R

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1132-R-TN3-T

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1132T100P

MediumPowerTransistor(-32V,??1A)

MediumPowerTransistor(-32V,-1A) Features 1)LowVCE(sat). VCE(sat)=-0.2V(Typ.) (IC/IB=-500mA/-50mA) 2)Compliments2SD1664/2SD1858 Structure Epitaxialplanartype PNPsilicontransistor

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SB1132-X-AB3-R

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1132-X-TN3-R

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1132-X-TN3-T

MEDIUMPOWERTRANSISTOR

DESCRIPTION TheUTC2SB1132isaepitaxialplanartypePNPsilicontransistor. FEATURES *LowVCE(SAT). VCE(SAT)=-0.2V(Typ.)(IC/IB=-500mA/-50mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SB1133

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Fpackage •Complementtotype2SD1666 •Lowcollectorsaturationvoltage •Wideareaofsafeoperation APPLICATIONS •Forlow-frequencyandgeneral-purposeamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB1133

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Fpackage •Complementtotype2SD1666 •Lowcollectorsaturationvoltage •Wideareaofsafeoperation APPLICATIONS •Forlow-frequencyandgeneral-purposeamplifierapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC
2SB1133

PNPEPITAXIALSILICONTRANSISTOR(POWERAMPLIFIERVERTICALDEFLECTIONOUTPUT)

POWERAMPLIFIERVERTICALDEFLECTIONOUTPUT

WINGSWing Shing Computer Components

Wing Shing Computer Components

WINGS
2SB1133

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Fpackage •Complementtotype2SD1666 •Lowcollectorsaturationvoltage •Wideareaofsafeoperation APPLICATIONS •Forlow-frequencyandgeneral-purposeamplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SB1134

50V/5ASwitchingApplications

Applications 1.Relaydrivers,high-speedinverters,andothergeneralhigh-currentswitchingapplications.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SB1135

50V/7ASwitchingApplications

50V/7Aswitchingapplication Features 1.Low-saturationcollector-to-emittervoltage:Vce(sat)=-0.4Vmax 2.WideASOleadingtohighresistancetobreakdown. 3.Micalesspackagefacilitatingmounting.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SB1136

50V/12ASwitchingApplications

Applications ·Relaydrivers,high-speedinverters,converters,andothergenralhigh-currentswitchingapplications. Features ·Low-saturationcollector-to-emittervoltage:VCE(sat)=–0.5V(PNP),0.4V(NPN)max. ·WideASOleadingtohighresistancetobreakdown. ·Micalesspackage

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SB1132

MediumPowerTransistor(-32V,-1A)

文件：179.26 Kbytes Page：5 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SB1132

MediumPowerTransistor(−32V,−1A)

文件：79.9 Kbytes Page：5 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SB1132

PNPSiliconMediumPowerTransistor

文件：177.46 Kbytes Page：3 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SB1132

LowVCE(sat)0.2V(Typ)IC/IB=-500mA/-50mA

文件：124.03 Kbytes Page：2 Pages

MAKOSEMI

MAKO SEMICONDUCTOR CO.,LIMITED

MAKOSEMI
2SB1132

Plastic-EncapsulateTransistors

文件：193.82 Kbytes Page：2 Pages

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH

2SB113产品属性

  • 类型

    描述

  • 型号

    2SB113

  • 制造商

    ROHM

  • 制造商全称

    Rohm

  • 功能描述

    Epitaxial Planar PNP Silicon Transistor

2SB113供应商更多...

更新时间：2024-4-24 17:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市莱克讯科技有限公司
2SB1132
CJ
1832+
SOT89
5000
公司原装现货,可来看货!
询价
深圳市航润创能电子集团有限公司
2SB1132FD5T100R
ROHM/罗姆
21+
SOT-89
2400
只做原装,假一罚十
询价
深圳市航宇科工半导体有限公司
2SB1132
CJ/长电
22+
SOT89
600000
航宇科工半导体-央企优秀战略合作伙伴!
询价
深圳市科恒伟业电子有限公司
2SB1132T100R
ROHM/罗姆
22+
SOT-89
9800
只做原装正品假一赔十!正规渠道订货!
询价
深圳市明嘉莱科技有限公司
2SB1132FD5T100R
ROHM/罗姆
24+
SOT89
860000
明嘉莱只做原装正品现货
询价
深圳市昌和盛利电子有限公司
2SB1132
ROHM
23+
SOT-89
11092
询价
深圳市凌旭科技有限公司
2SB1132L-R-AB3-R
UTC
2016+
SOT89
11237
只做原装,假一罚十,公司可开17%增值税发票!
询价
深圳市赛特兴科技有限公司
2SB1132T100Q
ROHM
11+
SOT-89
1000
正规渠道,只有原装!
询价
深圳市特顺芯科技有限公司
2SB1132
ROHM
2008++
SOT-89
6200
新进库存/原装
询价
深圳市富利微电子科技有限公司
2SB1132
ROHM/罗姆
23+
SOT-89
33500
全新进口原装现货,假一罚十
询价

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