2N3055晶体管资料

  • 2N3055(E,H,S,U,)别名:2N3055(E,H,S,U,)三极管、2N3055(E,H,S,U,)晶体管、2N3055(E,H,S,U,)晶体三极管

  • 2N3055(E,H,S,U,)生产厂家:德国AEG公司_德国椤茨标准电器公司_法国巴黎珊斯公

  • 2N3055(E,H,S,U,)制作材料:Si-NPN

  • 2N3055(E,H,S,U,)性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2N3055(E,H,S,U,)封装形式:直插封装

  • 2N3055(E,H,S,U,)极限工作电压:100V

  • 2N3055(E,H,S,U,)最大电流允许值:15A

  • 2N3055(E,H,S,U,)最大工作频率:>2.5MHZ

  • 2N3055(E,H,S,U,)引脚数:3

  • 2N3055(E,H,S,U,)最大耗散功率:115W

  • 2N3055(E,H,S,U,)放大倍数

  • 2N3055(E,H,S,U,)图片代号:D-44

  • 2N3055(E,H,S,U,)vtest:100

  • 2N3055(E,H,S,U,)htest:2500100

  • 2N3055(E,H,S,U,)atest:15

  • 2N3055(E,H,S,U,)wtest:115

  • 2N3055(E,H,S,U,)代换 2N3055(E,H,S,U,)用什么型号代替:BD130,BD317,BD745C,BDW51C,BDX10,BDY20,BDY39,BDY73,2N5629,2N5630,2N5631,2N6254,3DD17D,

2N3055价格

参考价格:¥5.1068

型号:2N3055 品牌:SPC 备注:这里有2N3055多少钱,2024年最近7天走势,今日出价,今日竞价,2N3055批发/采购报价,2N3055行情走势销售排行榜,2N3055报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2N3055

15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS115WATTS

15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS115WATTS 2N3055(NPN)MJ2955(PNP) designedforgeneral–purposeswitchingandamplifierapplications. 1.DCCurrentGain—hFE=20–70@IC=4Adc 2.Collector–EmitterSaturationVoltage—VCE(sat)=1.1Vdc(Max)@IC=4Adc

MotorolaMotorola, Inc

摩托罗拉

Motorola
2N3055

15AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60,120VOLTS115,180WATTS

15AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60,120VOLTS115,180WATTS ...PowerBasecomplementarytransistorsdesignedforhighpoweraudio,steppingmotorandotherlinearapplications.Thesedevicescanalsobeusedinpowerswitchingcircuitssuchasrelayorsolenoiddrivers,d

MotorolaMotorola, Inc

摩托罗拉

Motorola
2N3055

COMPLEMENTARYSILICONPOWERTRANSISTORS

Description Thedevicesaremanufacturedinepitaxial-baseplanartechnologyandaresuitableforaudio,powerlinearandswitchingapplications. Features ■Lowcollector-emittersaturationvoltage ■ComplementaryNPN-PNPtransistors Applications ■Generalpurpose ■Audi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
2N3055

NPNTRANSISTORFORPOWERFULAFOUTPUTSTAGES

NPNTransistorforPowerfulAFOutputStage 2N3055isasinglediffusedNPNsilicontransistorinTO3case(3A2DIN41872).Thecollectoriselectricallyconnectedtothecase.ThetransistorisparticularlysuitableforuseinpowerfulAFoutputstagesandinstabilizedpowersupplyunits.

SIEMENS

Siemens Ltd

SIEMENS
2N3055

COMPLEMENTARYSILICONPOWERTRANSISTORS

COMPLEMENTARYSILICONPOWERTRANSISTORS 15AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60VOLTS115WATTS

bocaBoca semiconductor corporation

博卡博卡半导体公司

boca
2N3055

ComplementarySiliconPowerTransistors

15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS,115WATTS Complementarysiliconpowertransistorsaredesignedforgeneral−purposeswitchingandamplifierapplications. Features •DCCurrentGain−hFE=20−70@IC=4Adc •Collector−EmitterSaturationVoltage−VCE(sat

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N3055

TO-3PowerPackageTransistors(NPN)

TO-3PowerPackageTransistors(NPN)

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1
2N3055

BipolarNPNDeviceinaHermeticallysealedTO3MetalPackage

BipolarNPNDevice. VCEO=100V IC=15A

SEME-LAB

Seme LAB

SEME-LAB
2N3055

ComplementarySiliconPowerTransistors

15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS,115WATTS Complementarysiliconpowertransistorsaredesignedforgeneral−purposeswitchingandamplifierapplications. Features •DCCurrentGain−hFE=20−70@IC=4Adc •Collector−EmitterSaturationVoltage−VCE(sat

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N3055

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description Designedforpowerswitchingcircuits,seriesandshuntregulators,outputstagesandhighfidelityamplifiers.

DCCOMDc Components

直流元件直流元件有限公司

DCCOM
2N3055

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3package ·ComplementtotypeMJ2955 ·DCCurrentGain-hFE=20–70@IC=4Adc ·Collector–EmitterSaturationVoltage-VCE(sat)=1.1Vdc(Max)@IC=4Adc ·ExcellentSafeOperatingArea APPLICATIONS ·Designedforgeneral–purposeswitchingandamplifier

SAVANTIC

Savantic, Inc.

SAVANTIC
2N3055

NPNPOWERSILICONTRANSISTOR

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
2N3055

PowerTransistors

PowerTransistors

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
2N3055

POWERLINEARANDSWITCHINGAPPLICATIONS

The2N3055isasiliconPlanarEpitaxialNPNtransistorinJedecTO-39metalcase.Designedforgeneralpurpose,moderatespeed,switchingandamplifierapplicationsCompliancetoRoHS.

COMSET

Comset Semiconductor

COMSET
2N3055

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3package ·ComplementtotypeMJ2955 ·DCCurrentGain-hFE=20–70@IC=4Adc ·Collector–EmitterSaturationVoltage-VCE(sat)=1.1Vdc(Max)@IC=4Adc ·ExcellentSafeOperatingArea APPLICATIONS ·Designedforgeneral–purposeswitching andamplif

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC
2N3055

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N3055andMJ2955arecomplementarysiliconpowertransistorsmanufacturedbytheepitaxialbaseprocess,mountedinahermeticallysealedmetalcase,designedforgeneralpurposeswitchingandamplifierapplications.

CentralCentral Semiconductor Corp

美国中央半导体

Central
2N3055

SiliconNPNPowerTransistor

DESCRIPTION ·ExcellentSafeOperatingArea ·DCCurrentGain-hFE=20-70@IC=4A ·Collector-EmitterSaturationVoltage-:VCE(sat)=1.1V(Max)@IC=4A ·ComplementtoTypeMJ2955 APPLICATIONS ·Designedforgeneral-purposeswitchingandamplifierapplications

TGS

Tiger Electronic Co.,Ltd

TGS
2N3055

SILICONPLANARPOWERTRANSISTORS

GeneralPurposeSwitchingandAmplifierApplications 2N3055NPN MJ2955PNP

CDIL

CDIL

CDIL
2N3055

NPNSILICONPHOTOTRANSISTOR

NPNSILICONPOWERTRANSISTOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2N3055

ComplementarySiliconpowertransistors

DESCRIPTION The2N3055isasiliconepitaxial-baseplanarNPNtransistormountedinJEDECTO-3metalcase.ltisintendedforpowerswitchingcircuits,andshuntregulators,outputstagesandamplifiers.seriesfidelityamplifiers ThecomplementaryPNPtypeisMJ2955. FEATURES Design

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI
2N3055

SILICONNPNPOWERTRANSISTOR

BipolarNPNDevice. VCEO=100V IC=15A

TTELECTT Electronics.

梯梯电子集成制造服务(苏州)有限公司

TTELEC
2N3055

NPNTransistorBareDie

Features Collectorcurrentupto15A HighDCCurrentGain,hFE=20-70@IC=4A LowVCE(sat)=1.1VMax@IC=4A Solderablebackmetal HighReliabilitytestedgradesforMilitary+Space

SS

Silicon Supplies

SS
2N3055

封装/外壳:TO-204AA,TO-3 包装:剪切带(CT)带盒(TB) 描述:TRANS NPN 60V 15A TO3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
2N3055

封装/外壳:TO-204AA,TO-3 包装:卷带(TR) 描述:TRANS NPN 70V 15A TO3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MicrochipMicrochip Technology Inc.

微芯科技微芯科技股份有限公司

Microchip
2N3055

GERMANIUMPNPTRANSISTORS

文件:2.44311 Mbytes Page:6 Pages

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1
2N3055

siliconNPNtriplediffusedtype

文件:186.35 Kbytes Page:2 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2N3055

SiliconNPNPowerTransistors

文件:153.13 Kbytes Page:4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC
2N3055

COMPLEMENTARYSILICONPOWERTRANSISTORS

文件:493.29 Kbytes Page:2 Pages

CentralCentral Semiconductor Corp

美国中央半导体

Central
2N3055

SiliconNPNPowerTransistors

文件:242.87 Kbytes Page:4 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC
2N3055

Complementarypowertransistors

文件:92.97 Kbytes Page:7 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
2N3055

NPNPowerSiliconTransistor

文件:487.38 Kbytes Page:3 Pages

MA-COM

M/A-COM Technology Solutions, Inc.

MA-COM
2N3055

SILICONPLANARPOWERTRANSISTORS

文件:150.61 Kbytes Page:3 Pages

TEL

TRANSYS Electronics Limited

TEL
2N3055

SILICONNPNTRANSISTORS

文件:55.17 Kbytes Page:2 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N3055

POWERTRANSISTORS(15A,50V,115W)

文件:167.54 Kbytes Page:3 Pages

MOSPEC

MOSPEC

MOSPEC
2N3055

NPNSILICONDARLINGTONS

文件:76.82 Kbytes Page:3 Pages

COMSET

Comset Semiconductor

COMSET

15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS115WATTS

15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS115WATTS 2N3055(NPN)MJ2955(PNP) designedforgeneral–purposeswitchingandamplifierapplications. 1.DCCurrentGain—hFE=20–70@IC=4Adc 2.Collector–EmitterSaturationVoltage—VCE(sat)=1.1Vdc(Max)@IC=4Adc

MotorolaMotorola, Inc

摩托罗拉

Motorola

TO-3PowerPackageTransistors(NPN)

TO-3PowerPackageTransistors(NPN)

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1

COMPLEMENTARYSILICONHIGH-POWERTRANSISTORS

2N3055A,MJ15015-->NPN MJ15016,MJ2955A-->PNP 15AMPERECOMPLEMENTARYSILICONPOWERTRANSISTOR 60,120VOLTS 115,180WATTS

bocaBoca semiconductor corporation

博卡博卡半导体公司

boca

POWERTRANSISTORS(15A)

2N3055A(NPN) MJ15015(NPN) MJ2955A(PNP) NJ15016(PNP)

MOSPEC

MOSPEC

MOSPEC

15AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60,120VOLTS115,180WATTS

15AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60,120VOLTS115,180WATTS ...PowerBasecomplementarytransistorsdesignedforhighpoweraudio,steppingmotorandotherlinearapplications.Thesedevicescanalsobeusedinpowerswitchingcircuitssuchasrelayorsolenoiddrivers,d

MotorolaMotorola, Inc

摩托罗拉

Motorola

COMPLEMENTARYSILICONPOWERTRANSISTORS

15AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60,120VOLTS115,180WATTS ...PowerBasecomplementarytransistorsdesignedforhighpoweraudio,steppingmotorandotherlinearapplications.Thesedevicescanalsobeusedinpowerswitchingcircuitssuchasrelayorsolenoiddrivers,d

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3package ·ComplementtotypeMJ2955A ·ExcellentSafeOperatingArea APPLICATIONS ·Forhighpoweraudio,steppingmotorandotherlinearapplications ·Relayorsolenoiddrviers ·DC-DCconvertersinverters

SAVANTIC

Savantic, Inc.

SAVANTIC

BipolarNPNDeviceinaHermeticallysealedTO3

BipolarNPNDevice. VCEO=60V IC=15A

SEME-LAB

Seme LAB

SEME-LAB

COMPLEMENTARYSILICONHIGH-POWERTRANSISTORS

2N3055A,MJ15015-->NPN MJ15016,MJ2955A-->PNP 15AMPERECOMPLEMENTARYSILICONPOWERTRANSISTOR 60,120VOLTS 115,180WATTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

ComplementarySiliconHigh-PowerTransistors

ThesePowerBasecomplementarytransistorsaredesignedforhighpoweraudio,steppingmotorandotherlinearapplications.Thesedevicescanalsobeusedinpowerswitchingcircuitssuchasrelayorsolenoiddrivers,dc−to−dcconverters,inverters,orforinductiveloadsrequiringhighersafeoper

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N-P-NSILICONPOWERTRANSISTOR

NPNSILICONPOWERTRANSISTOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

BipolarNPNDeviceinaHermeticallysealed

BipolarNPNDevice. VCEO=60V IC=15A

SEME-LAB

Seme LAB

SEME-LAB

ComplementarySiliconPowerTransistors

15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS,115WATTS Complementarysiliconpowertransistorsaredesignedforgeneral−purposeswitchingandamplifierapplications. Features •DCCurrentGain−hFE=20−70@IC=4Adc •Collector−EmitterSaturationVoltage−VCE(sat

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ComplementarySiliconPowerTransistors

15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS,115WATTS Complementarysiliconpowertransistorsaredesignedforgeneral−purposeswitchingandamplifierapplications. Features •DCCurrentGain−hFE=20−70@IC=4Adc •Collector−EmitterSaturationVoltage−VCE(sat

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ComplementarySiliconPowerTransistors

15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS,115WATTS Complementarysiliconpowertransistorsaredesignedforgeneral−purposeswitchingandamplifierapplications. Features •DCCurrentGain−hFE=20−70@IC=4Adc •Collector−EmitterSaturationVoltage−VCE(sat

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

iscSiliconNPNPowerTransistor

DESCRIPTION ·ExcellentSafeOperatingArea ·DCCurrentGain-hFE=20-70@IC=4A ·Collector-EmitterSaturationVoltage-:VCE(sat)=1.1V(Max)@IC=4A APPLICATIONS ·Designedforgeneral-purposeswitchingandamplifierApplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SILICONN-P-NGENERAL-PURPOSE

SILICONNPNGENERALPURPOSE 2N3055areHomataxial-basetypeusefulforpowerswitchingcircuits,forseries-andshunt-regulatordriverandoutputstages,andforhigh-fidelityamplifiers.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

NPNPOWERTRANSISTOR

SwitchingRegulatorandPowerAmplifierApplications TO-3 MetalCanPackage

CDIL

CDIL

CDIL

TO-3PowerPackageTransistors(NPN)

TO-3PowerPackageTransistors(NPN)

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1

SILICONPLANARPOWERTRANSISTORS

GeneralPurposeSwitchingandAmplifierApplications 2N3055NPN MJ2955PNP

CDIL

CDIL

CDIL

PowerTransistors

PowerTransistors

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

iscSiliconNPNPowerTransistor

DESCRIPTION ·ExcellentSafeOperatingArea ·DCCurrentGain-hFE=80-150@IC=4A ·Collector-EmitterSaturationVoltage- :VCE(sat)=1.1V(Max)@IC=4A ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforgeneral-purposeswitchingand

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

Complementarypowertransistors

文件:92.97 Kbytes Page:7 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

NPNSILICONDARLINGTONS

文件:76.82 Kbytes Page:3 Pages

COMSET

Comset Semiconductor

COMSET

COMPLEMENTARYSILICONPOWERTRANSISTORS

文件:493.29 Kbytes Page:2 Pages

CentralCentral Semiconductor Corp

美国中央半导体

Central

2N3055产品属性

  • 类型

    描述

  • 型号

    2N3055

  • 功能描述

    两极晶体管 - BJT NPN Power Switching

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2024-4-25 10:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
ROHS
56520
一级代理 原装正品假一罚十价格优势长期供货
ON
22+
TO-3
7500
郑重承诺只做原装进口货
ST/意法
22++
TO3
5209
原装正品!诚信经营,实单价优!
ST
ROHS+Original
NA
26
专业电子元器件供应链/QQ 350053121 /正纳电子
ON/安森美
2046+
9852
只做原装正品现货!或订货假一赔十!
ON Semiconductor
2010+
N/A
888
加我qq或微信,了解更多详细信息,体验一站式购物
ST
23+24
53870
原装正品,原盘原标,提供BOM一站式配单
ST
23+
NA
26
专业电子元器件供应链正迈科技特价代理QQ1304306553
ON/安森美
2022+
5000
只做原装,价格优惠,长期供货。
ST
22+
TO-3
8000
原装正品支持实单

2N3055芯片相关品牌

  • ABRACON
  • AD
  • HAMMOND
  • ICST
  • MOLEX7
  • Motorola
  • NIC
  • Sipex
  • STMICROELECTRONICS
  • SUNMATE
  • Temic
  • TRACOPOWER

2N3055数据表相关新闻