1SS226价格

参考价格:¥0.1560

型号:1SS226 品牌:TOSHIBA 备注:这里有1SS226多少钱,2024年最近7天走势,今日出价,今日竞价,1SS226批发/采购报价,1SS226行情走势销售排行榜,1SS226报价。
型号 功能描述 生产厂家&企业 LOGO 操作
1SS226

SOT-23Plastic-EncapsulateDiodes

FEATURES ●Lowforwardvoltage ●Fastreverserecoverytime ●Smalltotalcapacitance

TGS

Tiger Electronic Co.,Ltd

TGS
1SS226

UltraHighSpeedSwitching

Featrues ●Lowforwardvoltage:VF(3)=0.9V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:CT=0.9pF(typ.) ●WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

WILLASWILLAS electronics corp

威倫威倫电子股份有限公司

WILLAS
1SS226

UltraHighSpeedSwitchingApplication

UltraHighSpeedSwitchingApplication ●Smallpackage:SC-59 ●Lowforwardvoltage:VF(3)=0.9V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:CT=0.9pF(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
1SS226

SWITCHINGDIODE

SWITCHINGDIODE FEATURES ●Lowforwardvoltage ●Fastreverserecoverytime ●Smalltotalcapacitance

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
1SS226

SwitchingDiodes

FEATURES ●Lowforwardvoltage:VF(3)=0.9V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:CT=0.9pF(typ.)

ZHAOXINGWEIZhaoxingwei Electronics ., Ltd

兆兴威深圳市兆兴威电子有限公司

ZHAOXINGWEI
1SS226

Plastic-EncapsulateDiodes

SWITCHINGDIODES Features: Fastspeedandshortreverserecoverytime; Forwardpressurereduction;

SHENZHENSLSSHENZHEN SLS TECHNOLOGY CO.,LTD.

赛尔斯深圳市赛尔斯科技有限公司

SHENZHENSLS
1SS226

SwitchingDiodes

Features ◇Lowforwardvoltage:VF(3)=0.9V(typ.) ◇Fastreverserecoverytime:trr=1.6ns(typ.) ◇Smalltotalcapacitance:CT=0.9pF(typ.)

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
1SS226

SOT-23Plastic-EncapsulateDIODE

SOT-23Plastic-EncapsulateDIODE Features ●Powerdissipation PD:150mW(Tamb=25°C) ●ForwardCurrent IF:100mA ●ReverseVoltage VR:80V ●Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55°Cto+150°C

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
1SS226

UltraHighSpeedSwitchingApplication

Featrues ●Pb-FreePackageisAvailable. ●Lowforwardvoltage:VF(3)=0.9V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:CT=0.9pF(typ.)

YEASHINYea Shin Technology Co., Ltd

亞昕科技亞昕科技股份有限公司

YEASHIN
1SS226

Surfacemountswitchingdiode

FEATURES ●Fastswitching. ●Powerdissipation.PD:150mW(Tamb=25℃) ●Fastreverserecoverytime:trr=1.6ns(typ.) APPLICATIONS ●Highspeedswitchingapplication.

DSK

Diode Semiconductor Korea

DSK
1SS226

Surfacemountswitchingdiode

FEATURES ●Fastswitching. ●Powerdissipation.PD:150mW(Tamb=25℃) APPLICATIONS ●Highspeedswitchingapplication.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
1SS226

ULTRAHIGHSPEEDSWITCHINGAPPLICATION

Features ●SmallPackage ●Lowforwardvoltage:VF(3)=0.9V(Typ.) ●FastReverseRecoveryTime:trr=1.6ns(Typ.) ●SmallTotalCapacitance:CT=0.9pF(Typ.)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
1SS226

SILICONEPITAXIALPLANARDIODE

Features •Smallpackage •Lowforwardvoltage •Fastreverserecoverytime •Smalltotalcapacitance Applications •Ultrahighspeedswitchingapplication

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC
1SS226

SurfaceMountSwitchingDiodes100mAMPERES80VOLTS

SWITCHINGDIODE100mAMPERES80VOLTS Features: *FastSwitchingSpeed *SurfaceMountPackageIdeallySuitedforAutomaticInsertion *HighConductance *ForGeneralPurposeSwitchingApplications

WEITRONWEITRON

威堂電子科技

WEITRON
1SS226

150mWSWITCHINGDIODE

Features •LowCurrentLeakage. •SurfaceMountSOT-23Package •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Halogenfreeavailableuponrequestbyaddingsuffix-HF MaximumRatings •OperatingTemperature:-55°Cto+125°C •StorageTemperature:-55°Cto+150

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
1SS226

DIODE(ULTRAHIGHSPEEDSWITCHINGAPPLICATION)

UltraHighSpeedSwitchingApplication ●Smallpackage:SC-59 ●Lowforwardvoltage:VF(3)=0.9V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:CT=0.9pF(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
1SS226

Surfacemountswitchingdiode

FEATURES ●Fastswitching. ●Powerdissipation.PD:150mW(Tamb=25℃) ●Fastreverserecoverytime:trr=1.6ns(typ.) APPLICATIONS ●Highspeedswitchingapplication.

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

SY
1SS226

SiliconEpitaxialPlanarSwitchingDiode

Features ●Smallpackage ●Lowforwardvoltage ●Fastreverserecoverytime ●Smalltotalcapacitance

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半导体东莞市平晶半导体科技有限公司

PJSEMI
1SS226

SwitchingDiodes

Features ●SmallPackage ●Lowforwardvoltage:VF(3)=0.9V(Typ.) ●FastReverseRecoveryTime:trr=1.6ns(Typ.) ●SmallTotalCapacitance:CT=0.9pF(Typ.)

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
1SS226

SWITCHINGDIODESOT-23Plastic-EncapsulateTransistors

FEATURES *Lowforwardvoltage *Fastreverserecoverytime *Smalltotalcapacitance

UMWUMW

友台友台半导体

UMW
1SS226

SWITCHINGDIODESULTRAHIGHSPEEDSWITCHING

文件:459.52 Kbytes Page:5 Pages

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AITSEMI
1SS226

SwitchingDiodes

文件:1.14569 Mbytes Page:2 Pages

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
1SS226

UltraHighSpeedSwitchingApplication

文件:196.41 Kbytes Page:3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
1SS226

SOT-23SWITCHINGDIODE

文件:92.49 Kbytes Page:2 Pages

RECTRONRECTRON LTD

瑞创深圳市瑞创科技有限公司

RECTRON
1SS226

150mWSWITCHINGDIODE

文件:219.91 Kbytes Page:3 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

SiliconEpitaxialPlanarSwitchingDiode

Features •Smallpackage •Lowforwardvoltage •Fastreverserecoverytime •Smalltotalcapacitance •-CARforautomotiveandotherapplicationsrequiringunique siteandcontrolchangerequirements;AEC-Q101qualifiedand PPAPcapable. Applications •Ultrahighspeedswitchingapplica

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

GWSEMI

UltraHighSpeedSwitchingApplication

UltraHighSpeedSwitchingApplication ●Smallpackage:SC-59 ●Lowforwardvoltage:VF(3)=0.9V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:CT=0.9pF(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

UltraHighSpeedSwitchingApplication

UltraHighSpeedSwitchingApplication ●Smallpackage:SC-59 ●Lowforwardvoltage:VF(3)=0.9V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:CT=0.9pF(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

UltraHighSpeedSwitchingApplication

UltraHighSpeedSwitchingApplication ●Smallpackage:SC-59 ●Lowforwardvoltage:VF(3)=0.9V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:CT=0.9pF(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconEpitaxialPlanarSwitchingDiode

Features •Smallpackage •Lowforwardvoltage •Fastreverserecoverytime •Smalltotalcapacitance Applications •Ultrahighspeedswitchingapplication

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

GWSEMI

SWITCHINGDIODE

FEATURES Lowforwardvoltage Fastreverserecoverytime Smalltotalcapacitance -CARforautomotiveandotherapplicationsrequiring uniquesiteandcontrolchangerequirements;AECQ101 qualifiedandPPAPcapable

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

GWSEMI

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:散装 描述:PB-F S-MINI M8 DIODE (LF), IFM=3 分立半导体产品 二极管 - 整流器 - 阵列

Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

UltraHighSpeedSwitchingApplication

文件:196.41 Kbytes Page:3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SURFACEMOUNTSWITCHINGDIODE

文件:293.15 Kbytes Page:5 Pages

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

150mWSWITCHINGDIODE

文件:219.91 Kbytes Page:3 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

SwitchingDiodesSiliconEpitaxialPlanar

文件:177.6 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SOT-23Plastic-EncapsulateDIODE

文件:88.74 Kbytes Page:2 Pages

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN

SwitchingDiodes

文件:1.14569 Mbytes Page:2 Pages

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

SwitchingDiodes

文件:892.09 Kbytes Page:2 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

150mWSWITCHINGDIODE

文件:219.91 Kbytes Page:3 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:剪切带(CT)Digi-Reel® 得捷定制卷带管件 描述:DIODE ARRAY GP 80V 100MA SOT23 分立半导体产品 二极管 - 整流器 - 阵列

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

1SS226产品属性

  • 类型

    描述

  • 型号

    1SS226

  • 制造商

    Toshiba America Electronic Components

更新时间:2024-3-28 18:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
22+
SOT-23
600000
航宇科工半导体-央企优秀战略合作伙伴!
TOSHIBA/东芝
21+
SOT23-3
55450
TOSHIBA
ROHS全新原装
SOT
30000
东芝半导体QQ350053121正纳全系列代理经销
TOS
2339+
5323
公司原厂原装现货假一罚十!特价出售!强势库存!
TOS
2020+
SOT23
7906
百分百原装正品 真实公司现货库存 本公司只做原装 可
BILIN
23+
NA
19960
只做进口原装,终端工厂免费送样
TOSHIBA/东芝
22+
SOT-23
9800
只做原装正品假一赔十!正规渠道订货!
TOSHIBA
23+
SOT-23
9526
TOSHIBA
2018+
SMD
20000
一级代理原装现货假一罚十
TOSHIBA
2017+
SOT-23
32568
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票

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