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1N5819价格
参考价格:¥0.1665
型号:1N5819 品牌:MULTICOMP 备注:这里有1N5819多少钱,2024年最近7天走势,今日出价,今日竞价,1N5819批发/采购报价,1N5819行情走势销售排行榜,1N5819报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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1N5819 | SCHOTTKYBARRIERRECTIFIERS1AMPERE20,30and40VOLTS AxialLeadRectifiers ...employingtheSchottkyBarrierprincipleinalargeareametal–to–siliconpowerdiode.State–of–the–artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow–voltage, | MotorolaMotorola, Inc 摩托罗拉 | ||
1N5819 | 1AMPERESCHOTTKYBARRIERRECTIFIER(VOLTAGE-20to40VoltsCURRENT-1.0Ampere) VOLTAGE20to40VoltsCURRENT1.0Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Foruseinlowvoltage,highfrequencyinverters,f | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | ||
1N5819 | LOWDROPPOWERSCHOTTKYRECTIFIER DESCRIPTION AxialPowerSchottkyrectifiersuitedforSwitchModePowerSuppliesandhighfrequencyDCtoDCconverters.PackagedinDO41thesedevicesareintendedforuseinlowvoltage,highfrequencyinverters,freewheeling,polarityprotectionandsmallbatterychargers. FEATURESANDBENEF | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
1N5819 | SCHOTTKYBARRIERRECTIFIER(VOLTAGERANGE-20to40VoltsCURRENT-1.0Ampere) VOLTAGERANGE-20to40VoltsCURRENT-1.0Ampere FEATURES ✶Lowswitchingnoise ✶Lowforwardvoltagedrop ✶Highcurrentcapability ✶Highswitchingcapability ✶Highreliability ✶Highsurgecapability | WINGSWing Shing Computer Components Wing Shing Computer Components | ||
1N5819 | 1.0ASCHOTTKYBARRIERRECTIFIER Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●HighCurrentCapability ●LowPowerLoss,HighEfficiency ●HighSurgeCurrentCapability ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity ProtectionApplications | WTEWon-Top Electronics 毅星電子毅星电子股份有限公司 | ||
1N5819 | SCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES *TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 *Metalsiliconjunction,majoritycarrierconduction *Guardringforovervoltageprotection *Lowpowerloss,highefficiency * | ZOWIEZOWIE 智威智威科技股份有限公司 | ||
1N5819 | 1.0AMP.SCHOTTKYBARRIERRECTIFIERS VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability | JGDJinan Gude Electronic Device 济南固锝电子济南固锝电子器件有限公司 | ||
1N5819 | SCHOTTKYBARRIERRECTIFIER VOLTAGE:20TO40VCURRENT:1.0A FEATURES •Epitaxialconstructionforchip •Highcurrentcapability •Lowforwardvoltagedrop •Lowpowerloss,highefficiency •Highsurgecapability •Hightemperaturesolderingguaranteed: 250°C/10sec/0.375(9.5mm)leadlength at5lbstension | SSEShanghai Sunrise Electronics Shanghai Sunrise Electronics | ||
1N5819 | SCHOTTKYBARRIERDIODE
| SEMTECH Semtech Corporation | ||
1N5819 | 1.0AmpereSchottkyBarrierRectifiers Features •1.0ampereoperationatTA=90°Cwithnothermalrunaway. •Foruseinlowvoltage,highfrequencyinvertersfreewheeling, andpolarityprotectionapplications. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
1N5819 | 1.0AMPSCHOTTKYBARRIERRECTIFIERS VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction | BYTES Bytes | ||
1N5819 | 1AMPERESCHOTTKYBARRIERRECTIFIER
| TRSYS Transys Electronics | ||
1N5819 | 1.0AMPSCHOTTKYBARRIERRECTIFIERS
| FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 | ||
1N5819 | TECHNICALSPECIFICATIONSOFSCHOTTKYBARRIERRECTIFIER VOLTAGERANGE-20to40VoltsCURRENT-1.0Ampere FEATURES •Lowswitchingnoise •Lowforwardvoltagedrop •Highcurrentcapability •Highswitchingcapability •Highreliability •Highsurgecapability | DCCOMDc Components 直流元件直流元件有限公司 | ||
1N5819 | SCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES ♦PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ♦Metalsiliconjunction,majoritycarrier conduction ♦Guardringforovervoltageprotection ♦Lowpowerloss, highefficiency ♦ | GE GE Industrial Company | ||
1N5819 | 1AMPSCHOTTKYBARRIERRECTIFIERS •1N5819-1AND1N6761-1AVAILABLEINJAN,JANTX,JANTXV, ANDJANSPERMIL-PRF-19500/586 •1AMPSCHOTTKYBARRIERRECTIFIERS •HERMETICALLYSEALED •METALLURGICALLYBONDED | CDI-DIODE Compensated Deuices Incorporated | ||
1N5819 | 1.0ASCHOTTKYBARRIERRECTIFIER Features ●GuardRingDieConstructionforTransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForwardVoltageDrop ●ForUseinLowVoltage,HighFrequencyInverters,Free Wheeling,andPolarityProtectionApplication ●LeadF | DIODESDiodes Incorporated 达尔科技 | ||
1N5819 | 1AMPSCHOTTKYBARRIERRECTIFIER Features •Metalsemiconductorjunctionwithguardring •Epitaxialconstruction •lowforwardvoltagedrop •Highcurrentcapability •Easilycleanedwithfreon,alcohol,chlorothene andsimilarsolvents •PlasticmaterialULrecognized94V-O •Foruseinlowvoltage,highfrequencyin | FujiFUJI CORPORATION 株式会社FUJI | ||
1N5819 | SCHOTTKYBARRIERRECTIFIERDIODES PRV:20-40Volts IO:1.0Ampere FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Highefficiency *Lowpowerloss *Lowcost *Lowforwardvoltagedrop *Pb/RoHSFree | EIC EIC | ||
1N5819 | SCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to40Volts ForwardCurrent-1.0Ampere Features ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ●Metalsiliconjunction,majoritycarrierconduction ●Guardringforovervoltageprotection ●Lowpowerloss,highefficiency ●Highcu | Good-Ark Good-Ark | ||
1N5819 | SCHOTTKYBARRIERDIODES ReverseVoltage20to40VForwardCurrent1.0A Feature&Dimensions *PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 *Lowpowerloss,highefficiency *Foruseinlowvoltagehighfrequencyinverters, freewheeling,andpolarityprotectionapplications | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | ||
1N5819 | 1AmpSchottkyBarrierRectifier20to40Volts Features •GuardRingProtection •LowForwardVoltage •LowPowerLossForHighEfficiency •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation) | MCCMicro Commercial Components 美微科美微科半导体公司 | ||
1N5819 | SchottkyBarrierRectifier ReverseVoltage:20to40V ForwardCurrent:1.0A Features -PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 -Lowpowerloss,highefficiency -Foruseinlowvoltagehighfrequencyinverters, freewheeling,andpolarityprotectionapplications -Guardri | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | ||
1N5819 | SchottkyBarrierRectifiers FEATURES •Guardringforovervoltageprotection •Verysmallconductionlosses •Extremelyfastswitching •Lowforwardvoltagedrop •Highfrequencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •ComplianttoRoHSdirective2002/95/ECandin accordancetoWEEE2002/96/EC | VishayVishay Siliconix 威世科技 | ||
1N5819 | 1.0AmpereSchottkyBarrierRectifiers Features •1.0ampereoperationatTA=90°Cwithnothermalrunaway. •Foruseinlowvoltage,highfrequencyinvertersfreewheeling, andpolarityprotectionapplications. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
1N5819 | Schottkybarrierrectifiersdiodes ForwardCurrent:1A ReverseVoltage:20to40V Features ●Max.soldertemperature:260°C ●PlasticmaterialhasULclassification94V-0 | SemikronSemikron 赛米控 | ||
1N5819 | SCHOTTKYBARRIERRECTIFIERS 1.0AMPS ●PlasticmaterialusedcarriesUL flammabilityclassification94V-0 ●ExtremelylowVf,lowpowerloss,highefficiency ●Highstableoxidepassivatedjunction ●Lowstoredcharge,majoritycarrierconduction | STANSONStanson Technology Stanson 科技 | ||
1N5819 | AxialLeadSchottkyPowerRectifiers
| WEITRONWEITRON 威堂電子科技 | ||
1N5819 | AxialLeadRectifiers AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−volt | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
1N5819 | SCHOTTKYRECTIFIER1.0Amp Description/Features The1N5818/1N5819axialleadedSchottkyrectifierhasbeenoptimizedforverylowforwardvoltagedrop,withmoderateleakage.Typicalapplicationsareinswitchingpowersupplies,converters,free-wheelingdiodes,andreversebatteryprotection. •Lowprofile,axialleaded | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
1N5819 | SCHOTTKYBARRIERDIODE FEATURES *Schottkybarrierchip *Lowpowerloss,highefficiency. *Lowforwardvoltagedrop. *Highsurgecurrentcapability. *Foruseinlowvoltage,highfrequencyinverters,freewheeling diode,andpolarityprotectionapplications. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | ||
1N5819 | 1AMPSCHOTTKYBARRIERRECTIFIERS 1AmpSchottkyRectifier ●SchottkyBarrierRectifier ●GuardRingProtection ●LowForwardVoltage ●HighReliability ●HighCurrentCapability | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | ||
1N5819 | 1.0AMP.SchottkyBarrierRectifiers VoltageRange20to40VoltsCurrent1.0Ampere Features ◇Lowforwardvoltagedrop ◇Highcurrentcapability ◇Highreliability ◇Highsurgecurrentcapability | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | ||
1N5819 | SCHOTTKYDIODE FEATURES Powerdissipation PD:300mW(Tamb=25℃) Collectorcurrent IF:1A Collector-basevoltage VR:1N5817:20V 1N5819:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | ||
1N5819 | 1.0AMPSCHOTTKYBARRIERRECTIFIERS VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction | UNIOHMUniohm 台湾厚声 | ||
1N5819 | CURRENT1.0AmpereVOLTAGE20to40Volts Features •PlasticPackagehasUnderwritersLaboratory FlammabilityClassification94V-0 •Metalsiliconjunction,majoritycarrierconduction •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Highcurrentcapability,Lowforwardvoltagedrop •Highsurgecapabi | DAESAN Daesan Electronics Corp. | ||
1N5819 | 1AMPSCHOTTKYBARRIERRECTIFIERS FEATURES ●Metalsemiconductorjunctionwithguardring ●Epitaxialconstruction ●Lowforwardvoltagedrop ●Highcurrentcapacity ●Foruseinlowvoltage,highfrequencyinvertersfreewheeling, andpolarityprotectionapplications ●RoHSCOMPLIANT | DECDIOTEC Electronics Corporation DIOTEC Electronics Corporation | ||
1N5819 | SCHOTTKYBARRIERRECTIFIERS REVERSEVOLTAGE-20to40Volts FORWARDCURRENT-1.0Ampere FEATURES ●Metal-Semiconductorjunctionwithgardring ●Epitaxialconstruction ●Lowforwardvoltagedrop ●Highcurrentcapability ●TheplasticmaterialcarriesULrecognition94V-0 ●Foruseinlowvlotage,highfrequencyin | HYyueqing hongyi electronics co.,ltd 宏一乐清市宏一电子有限公司 | ||
1N5819 | 1.0AMP.SCHOTTKYBARRIERRECTIFIERS VoltageRange20to40VoltsCurrent1.0Amperes Features *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability | YANGJIEYangzhou yangjie electronic co., ltd 扬州扬杰电子扬州扬杰电子科技股份有限公司 | ||
1N5819 | 1.0AMP.SchottkyBarrierRectifier VOLTAGE:20TO40VCURRENT:1.0A SpecificationFeatures: ▪Case:Epoxy,Molded ▪Weight:0.4Gram(Approximately) ▪Highcurrentcapability,Lowforwardvoltagedrop ▪Highsurgecurrentcapability ▪Finish:AllExternalSurfacesCorrosionResistantAndTerminalLeadsAre ReadilySolderab | TAK_CHEONGTak Cheong Electronics (Holdings) Co.,Ltd 德昌电子德昌电子(集团)有限公司 | ||
1N5819 | SchottkyBarrierRectifierDiodes Features ●ForSurfaceMountedApplications ●MetalSiliconJunction,MajorityCarrierConduction ●LowPowerLoss,HighEfficiency ●HighForwardSurgeCurrentCapability | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | ||
1N5819 | SCHOTTKYBARRIERRECTIFIER VOLTAGERANGE:20---40VCURRENT:1.0A FEATURES ◇Metal-Semiconductorjunctionwithguardring ◇Epitaxialconstruction ◇Lowforwardvoltagedrop,lowswitchinglosses ◇Highsurgecapability ◇Foruseinlowvoltage,highfrequencyinvertersfree wheeling,andpolarityprotectionappli | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | ||
1N5819 | SchottkyBarrierRectifiers SchottkyBarrierRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingand | SILANSilan 士兰 | ||
1N5819 | SCHOTTKYBARRIERRECTIFIER VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES •Fastswitching. •Lowforwardvoltage,highcurrentcapability. •Lowpowerloss,highefficiency. •Highcurrentsurgecapability. •Hightemperaturesolderingguaranteed: 250°C/10seconds,0.375(9.5mm)leadlength at5lbs | MIC MIC GROUP RECTIFIERS | ||
1N5819 | 1ASchottkyBarrierRectifiers Features •Guardringforovervoltageprotection •Metaltosiliconjunction,majoritycarrierconduction •Verysmallconductionlosses •Extremelyfastswitching •Highcurrentcapability,lowforwardvoltagedrop •Highsurgecapability •Foruseinlowvoltage,highfrequencyinverters | TAITRON TAITRON | ||
1N5819 | VOLTAGE20V~40V1.0AMPSchottkyBarrierRectifiers FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction | SECOS SeCoS Halbleitertechnologie GmbH | ||
1N5819 | SCHOTTKYBARRIERRECTIFIER VOLTAGE:20-40VCURRENT:1.0A FEATURES •Lowswitchingnoise •Lowforwardvoltagedrop •Highcurrentcapability •Highswitchingcapabitity •Highreliability •Highsurgecapability | CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD 重庆平伟实业重庆平伟实业股份有限公司 | ||
1N5819 | SCHOTTKYBARRIERRECTIFIERDIODES PRV:20-40Volts IO:1.0Ampere FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Highefficiency *Lowpowerloss *Lowcost *Lowforwardvoltagedrop | SYNSEMI SynSemi,Inc. | ||
1N5819 | 1.0AmpSiliconSchottkyBarrierRectifiers Features •Lowforwardvoltagedrop •Highcurrentcapability •Highsurgecurrentcapability •Highreliability •Epitaxialconstruction | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | ||
1N5819 | SCHOTTKYBARRIERRECTIFIER ReverseVoltage20to40Volts ForwardCurrent-1.0Ampere FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Metalsiliconjunction,majoritycarrierconduction •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Highcu | JINANJINGHENGJinan Jingheng (Group) Co.,Ltd 晶恒集团济南晶恒电子有限责任公司 | ||
1N5819 | SCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES ◆PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ◆Metalsiliconjunction,majoritycarrierconduction ◆Guardringforovervoltageprotection ◆Lowpowerloss,highefficiency ◆Highcurren | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | ||
1N5819 | SCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ●Metalsiliconjunction,majoritycarrierconduction ●Guardringforovervoltageprotection ●Lowpowerloss,highefficiency ●Highcurre | DIOTECH Diotech Company. | ||
1N5819 | SCHOTTKYBARRIERRECTIFIERVOLTAGE:20TO40VCURRENT:1.0A VOLTAGE:20TO40VCURRENT:1.0A FEATURE Highcurrentcapability,Lowforwardvoltagedrop Lowpowerloss,highefficiency Highsurgecapability Hightemperaturesolderingguaranteed 250°C/10sec/0.375leadlengthat5lbstension | GULFSEMIGulf Semiconductor 海湾电子海湾电子(山东)有限公司 | ||
1N5819 | SCHOTTKYBARRIERRECTIFIER VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES •Fastswitching. •Lowforwardvoltage,highcurrentcapability. •Lowpowerloss,highefficiency. •Highcurrentsurgecapability. •Hightemperaturesolderingguaranteed: 250°C/10seconds,0.375(9.5mm)leadlength at5lbs | PFSShenzhen Ping Sheng Electronics Co., Ltd. 平盛电子深圳市平盛电子有限公司 | ||
1N5819 | SCHOTTKYBARRIERRECTIFIERS AXIALLEADRECTIFIERS ...employingtheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeaturesepitaxialconsrjctionwithoxidepassivationandmetaloverlapcontact. Ideallysuitedforuseasrectifiersinlow-voltage,high-frequencyinvert | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
1N5819 | PLASTICSCHOTTKYBARRIERRECTIFIER Features •LowForwardVoltageDrop •HighCurrentCapability •Hightemperaturesolderingguaranteed: 260℃/10seconds,0.375(9.5mm)leadlength, 5lbs.(2.3kg)tension •LeadandbodyaccordingwithRoHSstandard | DACHANGRugao Dachang Electronics Co., Ltd 如皋市大昌如皋市大昌电子有限公司 | ||
1N5819 | SCHOTTKYBARRIERRECTIFIERS REVERSEVOLTAGE-20to40Volts FORWARDCURRENT-1.0Ampere FEATURES ●Metal-Semiconductorjunctionwithguardring ●Epitaxialconstruction ●Lowforwardvoltagedrop ●Highcurrentcapability ●TheplasticmaterialcarriesULrecognition94V-0 ●Foruseinlowvoltage,highfrequencyin | CTC ctconline | ||
1N5819 | 1AMPERESCHOTTKYBARRIERRECTIFIERSVOLTAGE-20to40VoltsCURRENT-1.0Ampere?
| Surge SURGE COMPONENTS | ||
1N5819 | 1.0AMPSCHOTTKYBARRIERRECTIFIERS VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction | TGS Tiger Electronic Co.,Ltd | ||
1N5819 | 1AmpSchottkyRectifier 1AmpSchottkyRectifier ●SchottkyBarrierRectifier ●GuardRingProtection ●LowForwardVoltage ●HighReliability ●HighCurrentCapability | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |
1N5819产品属性
- 类型
描述
- 型号
1N5819
- 功能描述
肖特基二极管与整流器 Vr/40V Io/1A BULK
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TECHPUBLIC/台舟 |
23+ |
SOD-323 |
15800 |
新到现货,只有原装 |
|||
DIODESINC |
21+ |
NA |
48000 |
原装现货 假一赔十 |
|||
DIODES |
2020+ |
D0-41 |
519 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ON(安森美) |
23+ |
标准封装 |
9048 |
全新原装正品/价格优惠/质量保障 |
|||
Vishay(威世) |
23+ |
标准封装 |
7678 |
原厂直销,大量现货库存,交期快。价格优,支持账期 |
|||
TOSHIBA |
23+ |
原厂封装 |
9980 |
价格优势、原装现货、客户至上。欢迎广大客户来电查询 |
|||
ST |
2015+ |
DIP/SOP |
19889 |
一级代理原装现货,特价热卖! |
|||
TOSHIBA |
2017+ |
DO-214AA |
65895 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
|||
TOSHIBA |
1408+ |
SMA |
999999 |
绝对原装进口现货可开增值税发票 |
|||
DIODES/美台 |
23+ |
SOD-123 |
45000 |
热卖优势现货 |
1N5819规格书下载地址
1N5819参数引脚图相关
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- 256p
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- 240m
- 2222a
- 20kv
- 20700
- 1N5821S
- 1N5821M
- 1N5821H
- 1N5821G
- 1N5821
- 1N5820U
- 1N5820S
- 1N5820M
- 1N5820H
- 1N5820G
- 1N5820
- 1N581XS
- 1N581X
- 1N5819W
- 1N5819U
- 1N5819-TP
- 1N5819-T-F
- 1N5819-T
- 1N5819S
- 1N5819RLG
- 1N5819RL
- 1N5819M-13
- 1N5819M
- 1N5819L
- 1N5819HW-7-F
- 1N5819HW-7
- 1N5819H
- 1N5819-G
- 1N5819G
- 1N5819-E3/73
- 1N5819-E3/54-CUTTAPE
- 1N5819-E3/54
- 1N5819-E3/53
- 1N5819-E3/23
- 1N5819-CUTTAPE
- 1N5819-BP
- 1N5819-B
- 1N5819-1
- 1N5819_R2_10001
- 1N5818W
- 1N5818TR
- 1N5818-TP
- 1N5818-T-CUTTAPE
- 1N5818-T
- 1N5818S
- 1N5818RLG/BKN
- 1N5818RLG
- 1N5818M
- 1N5818L
- 1N5818H
- 1N5818G
- 1N5818-E3/73
- 1N5818-E3/54
- 1N5818-CUTTAPE
- 1N5818-BP
- 1N5818-B
- 1N5818
- 1N5817W
- 1N5817-TP
- 1N5817-T
- 1N5817S
- 1N5817RLG
- 1N5817MT-I
- 1N5817M
- 1N5817L
- 1N5817H
- 1N5817G
- 1N5817-E3/73
- 1N5817
- 1N5816R
- 1N5816
- 1N5815R
- 1N5815
- 1N5814R
- 1N5814
1N5819数据表相关新闻
1N5819W
1N5819W
2024-3-61N5819HW-7-F
1N5819HW-7-F
2023-7-201N5401
1N5401,当天发货0755-82732291全新原装现货或门市自取.
2020-9-161N5822
1N5822,全新原装当天发货或门市自取0755-82732291.
2020-7-261N5400TR,1SMA22CAT3G,2114-250A/225K,2322640兴中扬电子科技
1N5400TR,1SMA22CAT3G,2114-250A/225K,2322640兴中扬电子科技
2019-12-21N5353B,专业军工IC,军工电子元器件销售,兴中扬电子,航空IC
1N5353B,专业军工IC,军工电子元器件销售,兴中扬电子,航空IC
2019-12-2
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