1N5817价格

参考价格:¥0.1250

型号:1N5817 品牌:MULTICOMP 备注:这里有1N5817多少钱,2024年最近7天走势,今日出价,今日竞价,1N5817批发/采购报价,1N5817行情走势销售排行榜,1N5817报价。
型号 功能描述 生产厂家&企业 LOGO 操作
1N5817

SCHOTTKYBARRIERRECTIFIERS1AMPERE20,30and40VOLTS

AxialLeadRectifiers ...employingtheSchottkyBarrierprincipleinalargeareametal–to–siliconpowerdiode.State–of–the–artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow–voltage,

MotorolaMotorola, Inc

摩托罗拉

Motorola
1N5817

Schottkybarrierdiodes

DESCRIPTION The1N5817to1N5819typesareSchottkybarrierdiodesfabricatedinplanartechnology,andencapsulatedinSOD81hermeticallysealedglasspackagesincorporatingImplotec™(1)technology. FEATURES •Lowswitchinglosses •Fastrecoverytime •Guardringprotected •Hermeticallys

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
1N5817

LOWDROPPOWERSCHOTTKYRECTIFIER

DESCRIPTION AxialPowerSchottkyrectifiersuitedforSwitchModePowerSuppliesandhighfrequencyDCtoDCconverters.PackagedinDO41thesedevicesareintendedforuseinlowvoltage,highfrequencyinverters,freewheeling,polarityprotectionandsmallbatterychargers. FEATURESANDBENEF

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
1N5817

1AMPERESCHOTTKYBARRIERRECTIFIER(VOLTAGE-20to40VoltsCURRENT-1.0Ampere)

VOLTAGE20to40VoltsCURRENT1.0Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Foruseinlowvoltage,highfrequencyinverters,f

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
1N5817

1AMPERESCHOTTKYBARRIERRECTIFIERSVOLTAGE-20to40VoltsCURRENT-1.0Ampere?

Surge

SURGE COMPONENTS

Surge
1N5817

1.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●HighCurrentCapability ●LowPowerLoss,HighEfficiency ●HighSurgeCurrentCapability ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity ProtectionApplications

WTEWon-Top Electronics

毅星電子毅星电子股份有限公司

WTE
1N5817

1AMPERESCHOTTKYBARRIERRECTIFIER

TRSYS

Transys Electronics

TRSYS
1N5817

SCHOTTKYBARRIERRECTIFIER(VOLTAGERANGE-20to40VoltsCURRENT-1.0Ampere)

VOLTAGERANGE-20to40VoltsCURRENT-1.0Ampere FEATURES ✶Lowswitchingnoise ✶Lowforwardvoltagedrop ✶Highcurrentcapability ✶Highswitchingcapability ✶Highreliability ✶Highsurgecapability

WINGSWing Shing Computer Components

Wing Shing Computer Components

WINGS
1N5817

SCHOTTKYBARRIERDIODE

SEMTECH

Semtech Corporation

SEMTECH
1N5817

SCHOTTKYBARRIERRECTIFIER

VOLTAGE:20TO40VCURRENT:1.0A FEATURES •Epitaxialconstructionforchip •Highcurrentcapability •Lowforwardvoltagedrop •Lowpowerloss,highefficiency •Highsurgecapability •Hightemperaturesolderingguaranteed: 250°C/10sec/0.375(9.5mm)leadlength at5lbstension

SSEShanghai Sunrise Electronics

Shanghai Sunrise Electronics

SSE
1N5817

1.0AmpereSchottkyBarrierRectifiers

Features •1.0ampereoperationatTA=90°Cwithnothermalrunaway. •Foruseinlowvoltage,highfrequencyinvertersfreewheeling, andpolarityprotectionapplications.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
1N5817

SCHOTTKYBARRIERRECTIFIERDIODES

PRV:20-40Volts IO:1.0Ampere FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Highefficiency *Lowpowerloss *Lowcost *Lowforwardvoltagedrop *Pb/RoHSFree

EIC

EIC

EIC
1N5817

1AMPSCHOTTKYBARRIERRECTIFIER

Features •Metalsemiconductorjunctionwithguardring •Epitaxialconstruction •lowforwardvoltagedrop •Highcurrentcapability •Easilycleanedwithfreon,alcohol,chlorothene andsimilarsolvents •PlasticmaterialULrecognized94V-O •Foruseinlowvoltage,highfrequencyin

FujiFUJI CORPORATION

株式会社FUJI

Fuji
1N5817

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES *TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 *Metalsiliconjunction,majoritycarrierconduction *Guardringforovervoltageprotection *Lowpowerloss,highefficiency *

ZOWIEZOWIE

智威智威科技股份有限公司

ZOWIE
1N5817

1.0AMP.SCHOTTKYBARRIERRECTIFIERS

VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

JGD
1N5817

1.0ASCHOTTKYBARRIERRECTIFIER

Features ●GuardRingDieConstructionforTransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForwardVoltageDrop ●ForUseinLowVoltage,HighFrequencyInverters,Free Wheeling,andPolarityProtectionApplication ●LeadF

DIODESDiodes Incorporated

达尔科技

DIODES
1N5817

1.0AMPSCHOTTKYBARRIERRECTIFIERS

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

FORMOSA
1N5817

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES ♦PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ♦Metalsiliconjunction,majoritycarrier conduction ♦Guardringforovervoltageprotection ♦Lowpowerloss, highefficiency ♦

GE

GE Industrial Company

GE
1N5817

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to40Volts ForwardCurrent-1.0Ampere Features ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ●Metalsiliconjunction,majoritycarrierconduction ●Guardringforovervoltageprotection ●Lowpowerloss,highefficiency ●Highcu

Good-Ark

Good-Ark

Good-Ark
1N5817

1AmpSchottkyBarrierRectifier20to40Volts

Features •GuardRingProtection •LowForwardVoltage •LowPowerLossForHighEfficiency •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation)

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
1N5817

SCHOTTKYBARRIERDIODES

ReverseVoltage20to40VForwardCurrent1.0A Feature&Dimensions *PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 *Lowpowerloss,highefficiency *Foruseinlowvoltagehighfrequencyinverters, freewheeling,andpolarityprotectionapplications

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

LRC
1N5817

SchottkyBarrierRectifiers

•Nominalcurrent1A •Repetitivepeakreversevoltage20...40V •PlasticcaseDO-15(DO-204AC) •Weightapprox.0.4g •PlasticmaterialhasULclassification94V-0 •Standardpacka

DiotecDIOTEC

德欧泰克

Diotec
1N5817

1AmpSchottkyRectifier

1AmpSchottkyRectifier ●SchottkyBarrierRectifier ●GuardRingProtection ●LowForwardVoltage ●HighReliability ●HighCurrentCapability

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5817

SchottkyBarrierRectifiers

FEATURES •Guardringforovervoltageprotection •Verysmallconductionlosses •Extremelyfastswitching •Lowforwardvoltagedrop •Highfrequencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •ComplianttoRoHSdirective2002/95/ECandin   accordancetoWEEE2002/96/EC

VishayVishay Siliconix

威世科技

Vishay
1N5817

1.0AmpereSchottkyBarrierRectifiers

Features •1.0ampereoperationatTA=90°Cwithnothermalrunaway. •Foruseinlowvoltage,highfrequencyinvertersfreewheeling, andpolarityprotectionapplications.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
1N5817

1.0AMPSCHOTTKYBARRIERRECTIFIERS

VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

FORMOSA
1N5817

Schottkybarrierrectifiersdiodes

ForwardCurrent:1A ReverseVoltage:20to40V Features ●Max.soldertemperature:260°C ●PlasticmaterialhasULclassification94V-0

SemikronSemikron

赛米控

Semikron
1N5817

SCHOTTKYBARRIERRECTIFIERS

1.0AMPS ●PlasticmaterialusedcarriesUL flammabilityclassification94V-0 ●ExtremelylowVf,lowpowerloss,highefficiency ●Highstableoxidepassivatedjunction ●Lowstoredcharge,majoritycarrierconduction

STANSONStanson Technology

Stanson 科技

STANSON
1N5817

AxialLeadSchottkyPowerRectifiers

WEITRONWEITRON

威堂電子科技

WEITRON
1N5817

1.0AMPSCHOTTKYBARRIERRECTIFIERS

VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

BYTES

Bytes

BYTES
1N5817

TECHNICALSPECIFICATIONSOFSCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE-20to40VoltsCURRENT-1.0Ampere FEATURES •Lowswitchingnoise •Lowforwardvoltagedrop •Highcurrentcapability •Highswitchingcapability •Highreliability •Highsurgecapability

DCCOMDc Components

直流元件直流元件有限公司

DCCOM
1N5817

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−volt

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
1N5817

1.0AMP.SchottkyBarrierRectifiers

VoltageRange20to40VoltsCurrent1.0Ampere Features ◇Lowforwardvoltagedrop ◇Highcurrentcapability ◇Highreliability ◇Highsurgecurrentcapability

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
1N5817

1.0AmpSCHOTTKYBARRIERRECTIFIERS

Features ■EXTREMELYLOWVF ■LOWPOWERLOSS-HIGHEFFICIENCY ■LOWSTOREDCHARGE;MAJORITYCARRIERCONDUCTION ■MEETSULSPECIFICATION94V-0

FCI

Amphenol ICC

FCI
1N5817

SCHOTTKYDIODE

FEATURES Powerdissipation PD:300mW(Tamb=25℃) Collectorcurrent IF:1A Collector-basevoltage VR:1N5817:20V 1N5819:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL
1N5817

1AMPSCHOTTKYBARRIERRECTIFIERS

FEATURES ●Metalsemiconductorjunctionwithguardring ●Epitaxialconstruction ●Lowforwardvoltagedrop ●Highcurrentcapacity ●Foruseinlowvoltage,highfrequencyinvertersfreewheeling, andpolarityprotectionapplications ●RoHSCOMPLIANT

DECDIOTEC Electronics Corporation

DIOTEC Electronics Corporation

DEC
1N5817

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE:20---40VCURRENT:1.0A FEATURES ◇Metal-Semiconductorjunctionwithguardring ◇Epitaxialconstruction ◇Lowforwardvoltagedrop,lowswitchinglosses ◇Highsurgecapability ◇Foruseinlowvoltage,highfrequencyinvertersfree wheeling,andpolarityprotectionappli

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
1N5817

SchottkyBarrierRectifierDiodes

Features ●ForSurfaceMountedApplications ●MetalSiliconJunction,MajorityCarrierConduction ●LowPowerLoss,HighEfficiency ●HighForwardSurgeCurrentCapability

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
1N5817

1.0AMP.SCHOTTKYBARRIERRECTIFIERS

VoltageRange20to40VoltsCurrent1.0Amperes Features *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

YANGJIE
1N5817

1.0AMPSCHOTTKYBARRIERRECTIFIERS

VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

UNIOHMUniohm

台湾厚声

UNIOHM
1N5817

1.0AMP.SchottkyBarrierRectifier

VOLTAGE:20TO40VCURRENT:1.0A SpecificationFeatures: ▪Case:Epoxy,Molded ▪Weight:0.4Gram(Approximately) ▪Highcurrentcapability,Lowforwardvoltagedrop ▪Highsurgecurrentcapability ▪Finish:AllExternalSurfacesCorrosionResistantAndTerminalLeadsAre ReadilySolderab

TAK_CHEONGTak Cheong Electronics (Holdings) Co.,Ltd

德昌电子德昌电子(集团)有限公司

TAK_CHEONG
1N5817

VOLTAGE20V~40V1.0AMPSchottkyBarrierRectifiers

FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
1N5817

SCHOTTKYBARRIERRECTIFIER

VOLTAGE:20-40VCURRENT:1.0A FEATURES •Lowswitchingnoise •Lowforwardvoltagedrop •Highcurrentcapability •Highswitchingcapabitity •Highreliability •Highsurgecapability

CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD

重庆平伟实业重庆平伟实业股份有限公司

CHONGQING
1N5817

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES •Fastswitching. •Lowforwardvoltage,highcurrentcapability. •Lowpowerloss,highefficiency. •Highcurrentsurgecapability. •Hightemperaturesolderingguaranteed: 250°C/10seconds,0.375(9.5mm)leadlength at5lbs

MIC

MIC GROUP RECTIFIERS

MIC
1N5817

SCHOTTKYBARRIERRECTIFIERS

Features •Metalsiliconjunction,majoritycarrierconduction •Guardingforovervoltageprotection •Lowpowerloss,highefficiency •Highcurrentcapability •lowforwardvoltagedrop •Highsurgecapability •Foruseinlowvoltage,highfrequencyinverters, freewheeling,andpola

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC
1N5817

SCHOTTKYBARRIERRECTIFIERDIODES

PRV:20-40Volts IO:1.0Ampere FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Highefficiency *Lowpowerloss *Lowcost *Lowforwardvoltagedrop

SYNSEMI

SynSemi,Inc.

SYNSEMI
1N5817

SchottkyBarrierRectifiers

SchottkyBarrierRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingand

MOSPEC

MOSPEC

MOSPEC
1N5817

SCHOTTKYBARRIERRECTIFIERS

REVERSEVOLTAGE-20to40Volts FORWARDCURRENT-1.0Ampere FEATURES ●Metal-Semiconductorjunctionwithguardring ●Epitaxialconstruction ●Lowforwardvoltagedrop ●Highcurrentcapability ●TheplasticmaterialcarriesULrecognition94V-0 ●Foruseinlowvoltage,highfrequencyin

CTC

ctconline

CTC
1N5817

SCHOTTKYBARRIERRECTIFIERS

AXIALLEADRECTIFIERS ...employingtheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeaturesepitaxialconsrjctionwithoxidepassivationandmetaloverlapcontact. Ideallysuitedforuseasrectifiersinlow-voltage,high-frequencyinvert

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N5817

1.0AmpSiliconSchottkyBarrierRectifiers

Features •Lowforwardvoltagedrop •Highcurrentcapability •Highsurgecurrentcapability •Highreliability •Epitaxialconstruction

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

CYSTEKEC
1N5817

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage20to40Volts ForwardCurrent-1.0Ampere FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Metalsiliconjunction,majoritycarrierconduction •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Highcu

JINANJINGHENGJinan Jingheng (Group) Co.,Ltd

晶恒集团济南晶恒电子有限责任公司

JINANJINGHENG
1N5817

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ●Metalsiliconjunction,majoritycarrierconduction ●Guardringforovervoltageprotection ●Lowpowerloss,highefficiency ●Highcurre

DIOTECH

Diotech Company.

DIOTECH
1N5817

SchottkyBarrierRectifiers

SchottkyBarrierRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingand

SILANSilan

士兰

SILAN
1N5817

SCHOTTKYBARRIERRECTIFIERVOLTAGE:20TO40VCURRENT:1.0A

VOLTAGE:20TO40VCURRENT:1.0A FEATURE Highcurrentcapability,Lowforwardvoltagedrop Lowpowerloss,highefficiency Highsurgecapability Hightemperaturesolderingguaranteed 250°C/10sec/0.375leadlengthat5lbstension

GULFSEMIGulf Semiconductor

海湾电子海湾电子(山东)有限公司

GULFSEMI
1N5817

SchottkyRectifier,1.0A

DESCRIPTION The1N5817axialleadedSchottkyrectifierhasbeenoptimizedforverylowforwardvoltagedrop,withmoderateleakage.Typicalapplicationsareinswitchingpowersupplies,converters,freewheelingdiodes,andreversebatteryprotection. FEATURES •Lowprofile,axialleadedoutline

VishayVishay Siliconix

威世科技

Vishay
1N5817

1.0AMPSCHOTTKYBARRIERRECTIFIERS

VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

TGS

Tiger Electronic Co.,Ltd

TGS
1N5817

PLASTICSCHOTTKYBARRIERRECTIFIER

Features •LowForwardVoltageDrop •HighCurrentCapability •Hightemperaturesolderingguaranteed: 260℃/10seconds,0.375(9.5mm)leadlength, 5lbs.(2.3kg)tension •LeadandbodyaccordingwithRoHSstandard

DACHANGRugao Dachang Electronics Co., Ltd

如皋市大昌如皋市大昌电子有限公司

DACHANG
1N5817

SchottkyBarrierRectifier

ReverseVoltage:20to40V ForwardCurrent:1.0A Features -PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 -Lowpowerloss,highefficiency -Foruseinlowvoltagehighfrequencyinverters, freewheeling,andpolarityprotectionapplications -Guardri

COMCHIPComchip Technology

典琦典琦科技股份有限公司

COMCHIP
1N5817

CURRENT1.0AmpereVOLTAGE20to40Volts

Features •PlasticPackagehasUnderwritersLaboratory FlammabilityClassification94V-0 •Metalsiliconjunction,majoritycarrierconduction •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Highcurrentcapability,Lowforwardvoltagedrop •Highsurgecapabi

DAESAN

Daesan Electronics Corp.

DAESAN
1N5817

SCHOTTKYBARRIERRECTIFIERS

REVERSEVOLTAGE-20to40Volts FORWARDCURRENT-1.0Ampere FEATURES ●Metal-Semiconductorjunctionwithgardring ●Epitaxialconstruction ●Lowforwardvoltagedrop ●Highcurrentcapability ●TheplasticmaterialcarriesULrecognition94V-0 ●Foruseinlowvlotage,highfrequencyin

HYyueqing hongyi electronics co.,ltd

宏一乐清市宏一电子有限公司

HY

1N5817产品属性

  • 类型

    描述

  • 型号

    1N5817

  • 功能描述

    肖特基二极管与整流器 Vr/20V Io/1A T/R

  • RoHS

  • 制造商

    Skyworks Solutions, Inc.

  • 产品

    Schottky Diodes

  • 峰值反向电压

    2 V

  • 正向连续电流

    50 mA

  • 配置

    Crossover Quad

  • 正向电压下降

    370 mV

  • 最大功率耗散

    75 mW

  • 工作温度范围

    - 65 C to + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-143

  • 封装

    Reel

更新时间:2024-4-25 9:54:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
21+
LL41
600000
航宇科工半导体-中国航天科工集团战略合作伙伴!
ST
2024
SOD123
12074
原装现货,欢迎咨询
ON
16+/17+
DO-41
6967
渠道现货库存-原装正品
TOSHIBA/东芝
20+
SMA
5000
原装进口假一罚十
MIC
2012
DO-41
1360
原装正品现货
ON(安森美)
23+
标准封装
22048
全新原装正品/价格优惠/质量保障
星海
23+
DO-41
32078
10年以上分销商,原装进口件,服务型企业
群鑫
22+
DO-41/A-405
30673
原装正品 一级代理
TASUND/泰盛达
2020+
SMA
30000
SIPUSEMI
2021+
LL34
9000
原装现货,随时欢迎询价

1N5817芯片相关品牌

  • ABRACON
  • AD
  • HAMMOND
  • ICST
  • MOLEX7
  • Motorola
  • NIC
  • Sipex
  • STMICROELECTRONICS
  • SUNMATE
  • Temic
  • TRACOPOWER

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